Direct Synthesis of Large-Area Graphene on Insulating Substrates at Low Temperature using Microwave Plasma CVD.

With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance. Here, an attempt has been made to grow large-area graphene directly on insulating substrates, such as quartz and glass, using magnetron-generated microwave plasma chemical vapor deposition at a substrate temperature of 300 °C with a sheet resistance of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized using Raman microscopy, atomic force microscopy, scanning electron microscopy, optical imaging, UV-vis spectroscopy, and X-ray photoelectron spectroscopy. Four-probe resistivity and Hall effect measurements were performed to investigate electronic properties. Key to this report is the use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth, generally forming carbon walls, and 15-20 min of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance. This report can be helpful in growing large-area graphene directly on insulating transparent substrates at low temperatures with advanced electronic properties for applications in transparent conducting electrodes and optoelectronics.

Simultaneous improvement in electrical conductivity and Seebeck coefficient of PEDOT:PSS by N2 pressure-induced nitric acid treatment.

As a thermoelectric (TE) material suited to applications for recycling waste-heat into electricity through the Seebeck effect, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) is of great interest. Our research demonstrates a comprehensive study of different post-treatment methods with nitric acid (HNO3) to enhance the thermoelectric properties of PEDOT:PSS. The optimum conditions are obtained when PEDOT:PSS is treated with HNO3 for 10 min at room temperature followed by passing nitrogen gas (N2) with a pressure of 0.2 MPa. Upon this treatment, PEDOT:PSS changes from semiconductor-like behaviour to metal-like behaviour, with a simultaneous enhancement in the electrical conductivity and Seebeck coefficient at elevated temperature, resulting in an increase in the thermoelectric power factor from 0.0818 to 94.3 µW m-1 K-2 at 150 °C. The improvement in the TE properties is ascribed to the combined effects of phase segregation and conformational change of the PEDOT due to the weakened coulombic attraction between PEDOT and PSS chains by nitric acid as well as the pressure of the N2 gas as a mechanical means.