Effect of Back-Channel Surface on Reliability of Solution-Processed In0.51Ga0.15Zn0.34O Thin-Film Transistors with Thin Active Layer.

We have investigated the degradation mechanism of solution-processed indium-gallium-zinc-oxide (IGZO) thin-film transistors. The threshold voltage shift (ΔVth) followed a linear function under negative gate bias stress (NBS), while it showed a stretched-exponential behavior under positive gate bias stress. The slope of ΔVth for stress time was rarely changed with variations below 0.3 mV/s. The thickness of the fabricated IGZO layer (In0.51Ga0.15Zn0.34O) was approximately 10 nm. The Debye length (LD) was larger than IGZO thickness (tIGZO) due to the fully depleted active layer under NBS. Therefore, the degradation phenomenon under NBS was related to the adsorption at back-channel surface. The back-channel surface could be affected by the gate bias under NBS, and the molecules adsorbed at the IGZO layer were positively charged and induced extra electrons by NBS. We verified that the number of positively charged adsorbates had a proportional relationship with the ΔVth based on the two-dimensional technology computer-aided design (TCAD) simulation. Furthermore, we investigated the degradation phenomenon with the ΔVth equation regarding the adsorbates, and the result confirmed that the adsorption process could cause the linear ΔVth. We experimentally confirmed the effect of back-channel surface by comparing the ΔVth between different atmospheric conditions and LD. Consequently, the reaction at the back-channel surface should be considered to develop the metal-oxide semiconductor devices.

Silver nanowire-embedded PDMS with a multiscale structure for a highly sensitive and robust flexible pressure sensor.

The development of highly sensitive pressure sensors with a low-cost and facile fabrication technique is desirable for electronic skins and wearable sensing devices. Here a low-cost and facile fabrication strategy to obtain multiscale-structured elastomeric electrodes and a highly sensitive and robust flexible pressure sensor is presented. The principles of spontaneous buckle formation of the PDMS surface and the embedding of silver nanowires are used to fabricate the multiscale-structured elastomeric electrode. By laminating the multiscale-structured elastomeric electrode onto the dielectric layer/bottom electrode template, the pressure sensor can be obtained. The pressure sensor is based on the capacitive sensing mechanism and shows high sensitivity (>3.8 kPa(-1)), fast response and relaxation time (<150 ms), high bending stability and high cycle stability. The fabrication process can be easily scaled up to produce pressure sensor arrays and they can detect the spatial distribution of the applied pressure. It is also demonstrated that the fingertip pressure sensing device can sense the pressure distribution of each finger, when grabbing an object.

Flexible high-performance all-inkjet-printed inverters: organo-compatible and stable interface engineering.

High-performance all-inkjet-printed organic inverters are fabricated on flexible substrates. By introducing end-functionalized polystyrene on both surfaces of inkjet-printed source/drain Ag electrodes and poly(4-vinylphenol) dielectrics, organic-compatible and hydroxyl-free interfaces between those layers and 6,13-bis(triisopropylsilylethynyl)pentacene drastically reduce the interfacial trap and contact resistance. The resulting organic inverters show a full up-down switching performance and a high voltage gain of 19.8.