1.
Acta Crystallogr A
; 62(Pt 3): 201-7, 2006 May.
Artigo
em Inglês
| MEDLINE
| ID: mdl-16614492
RESUMO
A simple and robust method to precisely determine local strain fields using energy-unfiltered convergent-beam electron diffraction is presented. This method involves the subtraction of background intensity, the extraction of higher-order Laue-zone lines by tracing using a Radon transformation and a system of analytical strain determination without the need for an optimization routine such as chi2-based minimization. As an example, the measurement of residual strain in a silicon-on-insulator wafer is demonstrated. It is found from micro-Raman spectroscopy analysis that, at the nanometre scale, this measurement succeeds with an accuracy of 0.06%.