Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates.

Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO2) in calcium chloride (CaCl2), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical reduction mechanism of SiO2 to form Si deposits on the graphite substrate. X-ray diffraction (XRD) along with Raman and photoluminescence (PL) results show that the crystallinity of the electrodeposited Si-films was improved with an increase of the applied reduction potential during the electrochemical process. Scanning electron microscopy (SEM) reveals that the size, shape, and morphology of the Si-layers can be controlled from Si nanowires to the microcrystalline Si particles by controlling the reduction potentials. In addition, the morphology of the obtained Si-layers seems to be correlated with both the substrate materials and particle size of the feed materials. Thus, the difference in the electron transfer rate at substrate/nano-SiO2 interface due to different applied reduction potentials along with the dissolution rate of SiO2 particles during the electrochemical reduction process were found to be crucial in determining the microstructural properties of the Si-films.

Physical and chemical aspects at the interface and in the bulk of CuInSe2-based thin-film photovoltaics.

Chalcopyrite CuInSe2 (CISe)-based thin-film photovoltaic solar cells have been attracting attention since the 1970s. The technologies of CISe-based thin-film growth and device fabrication processes have already been put into practical applications and today commercial products are available. Nevertheless, there are numerous poorly understood areas in the physical and chemical aspects of the underlying materials science and interfacial and bulk defect physics in CISe-based thin-films and devices for further developments. In this paper, current issues in physical and chemical studies of CISe-based materials and devices are reviewed. Correlations between Cu-deficient phases and the effects of alkali-metals, applications to lightweight and flexible solar minimodules, single-crystalline epitaxial Cu(In,Ga)Se2 films and devices, differences between Cu(In,Ga)Se2 and Ag(In,Ga)Se2 materials, wide-gap CuGaSe2 films and devices, all-dry processed CISe-based solar cells with high photovoltaic efficiencies, and also fundamental studies on open circuit voltage loss analysis and the energy band structure at the interface are among the main areas of discussion in this review.

Optical and Electrical Transport Evaluations of n-Type Iron Pyrite Single Crystals.

Iron pyrite [cubic FeS2 (cFeS2)] is considered as an earth-abundant and low-cost thin-film photovoltaic material. However, the conversion efficiency of cFeS2-based solar cells remains below 3%. To elucidate this limitation, we evaluate the optical and electrical characteristics of cFeS2 single crystals that are grown using the flux method, thus providing us an understanding of the electron transport behavior of cFeS2 single crystals. The oxide layer on the surface of cFeS2, which can possibly have an influence on the electrical characteristics of cFeS2, is removed prior to characterization via optical spectroscopy and electrical transport measurement. The optical property of cFeS2 was found to have both indirect and direct transitions. We also observed the presence of a band tail below the conduction band. The obtained electrical transport behavior indicates that cFeS2 bulk exhibits a high defect density and a disordered phase, thus leading to the hopping conduction mechanism. Our results will pave the way for the development of photovoltaic applications with iron pyrite.