Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy.

The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) has been studied in broad range of the primary electron beam energies, with a special emphasis on the ultra-low energy range. The SEM imaging contrast related to resistivity changes in the In(0.55)Al(0.45)P irradiated with He2+ ions of 600 keV was subjected to an analysis in a range of 10 keV down to 10 eV of primary electron energies. The problem of specimen charging in ultra-low energy range and its effect on the contrast in SEM images has been tackled for the first time. Contrary to expectations based on the classical total emission yield approach, the potentials formed at the highly resistive part of irradiated area led to dramatic increase in the intensity of registered signal for primary electron energies below E1, which can be explained as signal saturation due to potential on the specimen surface acting as repeller for primary electrons. Nevertheless, the experimental data presenting the influence of the beam energy on the potential formation on the surface of an insulating material under electron irradiation have been presented for the first time in ultra-low energy regime.

Round Robin into Best Practices for the Determination of Indentation Size Effects.

The paper presents a statistical study of nanoindentation results obtained in seven European laboratories which have joined a round robin exercise to assess methods for the evaluation of indentation size effects. The study focuses on the characterization of ferritic/martensitic steels T91 and Eurofer97, envisaged as structural materials for nuclear fission and fusion applications, respectively. Depth-controlled single cycle measurements at various final indentation depths, force-controlled single cycle and force-controlled progressive multi-cycle measurements using Berkovich indenters at room temperature have been combined to calculate the indentation hardness and the elastic modulus as a function of depth applying the Oliver and Pharr method. Intra- and inter-laboratory variabilities have been evaluated. Elastic modulus corrections have been applied to the hardness data to compensate for materials related systematic errors, like pile-up behaviour, which is not accounted for by the Oliver and Pharr theory, and other sources of instrumental or methodological bias. The correction modifies the statistical hardness profiles and allows determining more reliable indentation size effects.

Colloidal domain lithography in multilayers with perpendicular anisotropy: an experimental study and micromagnetic simulations.

Currently, much attention is being paid to patterned multilayer systems in which there exists a perpendicular magnetic anisotropy, because of their potential applications in spintronics devices and in a new generation of magnetic storage media. To further improve their performance, different patterning techniques can be used, which render them suitable also for other applications. Here we show that He(+) 10 keV and Ar(+) 100 keV ion bombardment of (Ni(80)Fe(20)-2 nm/Au-2 nm/Co-0.6 nm/Au-2 nm)(10) multilayers through colloidal mask enables magnetic patterning of regularly arranged cylindrical magnetic domains, with perpendicular anisotropy, embedded in a non-ferromagnetic matrix or in a ferromagnetic matrix with magnetization oriented along the normal. These domains form an almost perfect two-dimensional hexagonal lattice with a submicron period and a large correlation length in a continuous and flat multilayer system. The magnetic anisotropy of these artificial domains remains unaffected by the magnetic patterning process, however the magnetization configuration of such a system depends on the magnetic properties of the matrix. The micromagnetic simulations were used to explain some of the features of the investigated patterned structures.