Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy.

Magnetoelectric nanocomposites have been a topic of intense research due to their profound potential in the applications of electronic devices based on spintronic technology. Nevertheless, in spite of significant progress made in the growth of high-quality nanocomposite thin films, the substrate clamping effect still remains a major hurdle in realizing the ultimate magnetoelectric coupling. To overcome this obstacle, an alternative strategy of fabricating a self-assembled ferroelectric-ferrimagnetic bulk heterojunction on a flexible muscovite via van der Waals epitaxy is adopted. In this study, we investigated the magnetoelectric coupling in a self-assembled BiFeO3 (BFO)-CoFe2O4 (CFO) bulk heterojunction epitaxially grown on a flexible muscovite substrate. The obtained heterojunction is composed of vertically aligned multiferroic BFO nanopillars embedded in a ferrimagnetic CFO matrix. Moreover, due to the weak interaction between the flexible substrate and bulk heterojunction, the interface is incoherent and, hence, the substrate clamping effect is greatly reduced. The phase-field simulation model also complements our results. The magnetic and electrical characterizations highlight the improvement in magnetoelectric coupling of the BFO-CFO bulk heterojunction. A magnetoelectric coupling coefficient of 74 mV/cm·Oe of this bulk heterojunction is larger than the magnetoelectric coefficient reported earlier on flexible substrates. Therefore, this study delivers a viable route of fabricating a remarkable magnetoelectric heterojunction and yet flexible electronic devices that are robust against extreme conditions with optimized performance.

Flexible Heteroepitaxy of CoFe2O4/Muscovite Bimorph with Large Magnetostriction.

A bimorph composed of ferrimagnetic cobalt ferrite (CoFe2O4, CFO) and flexible muscovite was fabricated via van der Waals epitaxy. The combination of X-ray diffraction and transmission electron microscopy was conducted to reveal the heteroepitaxy of the CFO/muscovite system. The robust magnetic behaviors against mechanical bending were characterized by hysteresis measurements and magnetic force microscopy, which maintain a saturation magnetization (Ms) of ∼120-150 emu/cm3 under different bending states. The large magnetostrictive response of the CFO film was then determined by digital holographic microscopy, where the difference of magnetostrction coefficient (Δλ) is -104 ppm. The superior performance of this bimorph is attributed to the nature of weak interaction between film and substrate. Such a flexible CFO/muscovite bimorph provides a new platform to develop next-generation flexible magnetic devices.

Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering.

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film's optoelectronic properties as well as the film's electrical stability were investigated. The results showed that the film's crystallinity degraded with increasing Ga content. The film's conductivity was first enhanced due to the replacement of Zn2+ by Ga3+ before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film's conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film's electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film's conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days.

Surface plasmon-enhanced photoluminescence of DCJTB by using silver nanoparticle arrays.

It is demonstrated that photoluminescence of DCJTB can be enhanced by surface plasmons occurred in silver nanoparticle arrays on glass substrates fabricated by using nanosphere lithography (NSL) combined with reactive ion etching (RIE). By changing the size of the seed polystyrene nanosphere with fixed thickness of SiO(2) film as a buffer layer between silver nanoparticles and fluorescent dye, we systematically studied the interaction between surface plasmons in Ag nanostructures and fluorescent dye by measuring the photoluminescence and time-resolved photoluminescence (TRPL) of the samples. As compared with pure DCJTB, it is observed that PL enhancement as high as 9.4 times and life time shortening from 0.966 ns shortened to 0.63 ns can be achieved with polystyrene nanosphere 430 nm in diameter. The physical origin due to plasmonic excitation has been clarified from 3D finite element simulations, as well as the assistance of UV-visible reflectance spectrum.

Sputter-prepared (001) BiFeO3 thin films with ferromagnetic L10-FePt(001) electrode on glass substrates.

Highly textured BiFeO3(001) films were formed on L10-FePt(001) bottom electrodes on glass substrates by sputtering at reduced temperature of 400°C. Good electric polarization 2Pr = 80 and 95 µC/cm2, comparable to that of the reported epitaxial films, and coercivity Ec = 415 and 435 kV/cm are achieved in the samples with 20-nm- and 30-nm-thick electrodes. The BiFeO3(001) films show different degrees of compressive strain. The relation between the variations of strain and 2Pr suggests that the enhancement of 2Pr resulted from the strain-induced rotation of spontaneous polarization. The presented results open possibilities for the applications based on electric-magnetic interactions.

Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films.

Nanocrystalline Co40Fe40B20 films, with film thickness tf = 100 nm, were deposited on glass substrates by the magnetron sputtering method at room temperature. During the film deposition period, a dc magnetic field, h = 40 Oe, was applied to introduce an easy axis for each film sample: one with h||L and the other with h||w, where L and w are the length and width of the film. Ferromagnetic resonance (FMR), ultrahigh frequency impedance (IM), dc electrical resistivity (ρ), and magnetic hysteresis loops (MHL) of these films were studied. From the MHL and r measurements, we obtain saturation magnetization 4πMs = 15.5 kG, anisotropy field Hk = 0.031 kG, and r = 168 mW.cm. From FMR, we can determine the Kittel mode ferromagnetic resonance (FMR-K) frequency fFMRK = 1,963 MHz. In the h||L case, IM spectra show the quasi-Kittel-mode ferromagnetic resonance (QFMR-K) at f0 and the Walker-mode ferromagnetic resonance (FMR-W) at fn, where n = 1, 2, 3, and 4. In the h||w case, IM spectra show QFMR-K at F0 and FMR-W at Fn. We find that f0 and F0 are shifted from fFMRK, respectively, and fn = Fn. The in-plane spin-wave resonances are responsible for those relative shifts.PACS No. 76.50.+q; 84.37.+q; 75.70.-i.