1.
Adv Mater
; 23(24): 2721-6, 2011 Jun 24.
Artigo
em Inglês
| MEDLINE
| ID: mdl-21495090
2.
J Nanosci Nanotechnol
; 8(10): 5606-9, 2008 Oct.
Artigo
em Inglês
| MEDLINE
| ID: mdl-19198509
RESUMO
We have fabricated a series of hole only devices with tungsten oxide (WO3) and molybdenum oxide (MoO3) n-doping materials in N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transport layer, and electron only devices with CsF and Cs2CO3 p-doping materials in 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transport layer. Current-voltage characteristics and conductivity of these devices are investigated. The optimal conditions for ohmic injection and low resistance properties, and process margins of each dopant are reported in this paper.