Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate.

This study aimed to investigate temperature dependencies at different injection currents (ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode (LED) based on multiple quantum wells (MQWs) grown on a Si substrate in a wide range of ICs (0.001-350 mA) and temperatures (6-350 K). The results show that the temperature-changing characteristic of the EL peak energy gradually evolves from an approximately V-shaped temperature dependence into a wave-shaped (three-step blueshift) dependence with increasing IC. Finally, it emerges as an approximately inverted V-shaped temperature dependence. The behavior reflects the fact that the emission related to InGaN is significantly influenced by the changing recombination dynamics of carriers with rising temperature or IC. This is attributed to the presence in the MQW active region of a stronger carrier localization effect across three zones with different average In contents. Moreover, with the decline of the temperature at lower ICs, the temperature behavior of the external quantum efficiency (EQE) value is dominated by the deactivated non-radiative centers. This phenomenon occurs not only in the higher temperature range but also at lower temperatures due to more In-content-induced structural defects, which are confirmed by measurements of the integrated EL intensity as well as the EQE dependence on IC.

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths.

Two InGaN/GaN multiple quantum well (MQW)-based blue light emitting diodes (LEDs) emitting photons at approximately the same wavelength, with different indium contents and well widths, are prepared, and the temperature-dependences of their electroluminescence (EL) spectra at different fixed injection currents are investigated. The results show that, compared with sample B with its lower indium content and larger well width, sample A with its higher indium content and smaller well width, has a stronger carrier localization effect and higher external quantum efficiency (EQE) at the lower fixed currents; however, upon increasing the injection current, both the localization effect and EQE for sample A decrease at a faster rate. The former is mainly attributed to the deeper potential levels due to the larger indium fluctuations originating from the higher indium content, and to the smaller well width-induced stronger carrier quantum-confine effect (QCE); the latter is mainly attributed to the more significant growing in the electron leakage and/or electron overflow originating from the smaller well width and larger lattice mismatch-induced stronger piezoelectric field, and to the more significant reduction in carrier localization effect originating from the smaller well width-induced smaller density of high-energy localized states.

"W-shaped" injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate.

Injection current, and temperature, dependences of the electroluminescence (EL) spectrum from green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED) grown on a Si substrate, are investigated over a wide range of injection currents (0.5 µA-350 mA) and temperatures (6-350 K). The results show that an increasing temperature can result in the change of injection current-dependent behavior of the EL spectrum in initial current range. That is, with increasing the injection current in the low current range, the emission process of the MQWs is dominated by filling effect of low-energetic localized states at the low temperature range of around 6 K, and by Coulomb screening of the quantum confinement Stark effect followed by a filling effect of the higher levels of the low-energetic localized states at the intermediate temperature range of around 160 K. However, when the temperature is further raised to the higher temperature range of around 350 K, the emission process of the MQWs in the low current range is dominated by carrier-scattering effect followed by non-radiative recombination process. The aforementioned current-dependent behaviors of the EL spectrum are mainly attributed to the strong localized effect of the green LED, as confirmed by the anomalous temperature dependence of the EL spectrum measured at the low injection current of 5 µA. In addition, the injection current dependence of external quantum efficiency at different temperatures shows that, with increasing temperature from 6 to 350 K, in addition to the enhanced non-radiative recombination, electron overflow becomes more significant, especially in the higher temperature range above 300 K.

Light Control of Ferromagnetism in ZnO Films on Pt Substrate at Room Temperature.

The control of ferromagnetism by light at room temperature is essential for the development of some optical-magnetic coupling devices, data storage and quantum computation techniques. In the present work, we demonstrate that the ferromagnetism of a semiconducting ZnO film on Pt substrate can be controlled by nonpolarized ultraviolet or violet light. The illumination of light with sufficiently high frequency photons could excite photogenerated electron-hole pairs in the semiconducting ZnO film. The amount of oxygen vacancies in the ZnO film and the appearance of built-in electric field due to the heterostructured ZnO/Pt may play important roles in the light-induced changes in the ferromagnetism of the ZnO film.

Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes.

A hybrid ZnO micro-mesh and nanorod arrays (MMNR) was fabricated as a light output window for GaN-based light-emitting diodes (LEDs) to enhance the light extraction efficiency. The light output power of GaN-based LEDs with the ZnO MMNR is improved by 95% compared to the original planar LEDs. The ZnO MMNR is manufactured by photolithography techniques and a two-step wet chemical growth process. The incident angle-resolved light transmission of the ZnO MMNR beyond the critical angle of total internal reflection is greatly enhanced. The light diffraction pattern of the ZnO MMNR shows that it possesses both the two-dimensional diffraction grating effect of a ZnO micro-mesh and the light scattering effect of a ZnO nanorod array. LEDs with the ZnO MMNR have greater light extraction efficiency than those with only a ZnO micro-mesh or a ZnO nanorod array. The local optical field patterns of the ZnO micro-mesh and the ZnO MMNR are investigated using confocal scanning electroluminescence microscopy. The microscopic light extraction mechanism of the ZnO MMNR is analyzed in-depth.

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells.

Excitation power and temperature dependences of the photoluminescence (PL) spectra are studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature. The anomalous temperature dependences of the peak energy and linewidth are well explained by the localized carrier hopping and thermalization process, and by the exponentially increased density of states with energy in the band tail. Moreover, it is also found that internal quantum efficiency is related to the mechanism conversion from nonradiative to radiative mechanism, and up to the carriers escaping from localized states.

Photon counting statistics of single molecule in solid matrix.

In this paper, we investigate the properties of photon emission statistics of single molecule in solid matrix. The influences of solid matrix surroundings on photon emission of single molecule system under the laser field and rf field for several examples, the single dibenzanthanthrene molecule in hexadecane, the spectral diffusion process, and the hidden two-state models and the Gaussian models of blinking behavior, are considered.