Photocatalytic antibacterial application of zinc oxide nanoparticles and self-assembled networks under dual UV irradiation for enhanced disinfection.

BACKGROUND: Zinc oxide (ZnO) nanoparticles and their networks have been developed for use in various applications such as gas sensors and semiconductors. AIM: In this study, their antibacterial activity against Escherichia coli under dual ultraviolet (UV) irradiation for disinfection was investigated. MATERIALS AND METHODS: ZnO nanoparticles were synthesized and immobilized onto silicon (Si) wafers by self-assembly. The physicochemical properties and antibacterial activity of ZnO nanoparticles and their networks were evaluated. Gene ontology was analyzed and toxicity levels were also monitored. RESULTS: Synthesized ZnO nanoparticles were spherical nanocrystals (<100 nm; Zn, 47%; O, 53%) that formed macro-mesoporous three-dimensional nanostructures on Si wafers in a concentration-dependent manner. ZnO nanoparticles and their networks on Si wafers had an excellent antibacterial activity against E. coli under dual UV irradiation (>3log CFU/mL). Specifically, arrayed ZnO nanoparticle networks showed superior activity compared with free synthesized ZnO nanoparticles. Oxidative stress-responsive proteins in E. coli were identified and categorized, which indicated antibacterial activity. Synthesized ZnO nanoparticles were less cytotoxic in HaCaT with an IC50 of 6.632 mg/mL, but phototoxic in Balb/c 3T3. CONCLUSION: The results suggested that ZnO nanoparticles and their networks can be promising photocatalytic antibiotics for use in next-generation disinfection systems. Their application could also be extended to industrial and clinical use as effective and safe photocatalytic antibiotics.

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer.

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure.

In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the channel orientation and the pitch size of the trenches as well as channel area in the FETs. Periodic corrugations and barriers of suspended graphene on the trench structure were measured by atomic force microscopy and electrostatic force microscopy. Regular barriers of 160 mV were observed for the trench structure with graphene. To confirm the transfer mechanism in the FETs depending on the channel orientation, the ratio of experimental mobility (3.6-3.74) was extracted from the current-voltage characteristics using equivalent circuit simulation. It is shown that the number of barriers increases as the pitch size decreases because the number of corrugations increases from different trench pitches. The noise for the 140 nm pitch trench is 1 order of magnitude higher than that for the 200 nm pitch trench.

Catalytic etching of monolayer graphene at low temperature via carbon oxidation.

In this work, an easy method to etch monolayer graphene is shown by catalytic oxidation in the presence of ZnO nanoparticles (NPs). The catalytic etching of monolayer graphene, which was transferred to the channel of field-effect transistors (FETs), was performed at low temperature by heating the FETs several times under an inert gas atmosphere (ZnO + C → Zn + CO or CO2). As the etching process proceeded, diverse etched structures in the shape of nano-channels and pits were observed under microscopic observation. To confirm the evolution of etching, current-voltage characteristics of monolayer graphene were measured after every step of etching by catalytic oxidation. As a result, the conductance of monolayer graphene decreased with the development of etched structures. This decrease in conductance was analyzed by percolation theory in a honeycomb structure. Finally, well-patterned graphene was obtained by oxidizing graphene under air in the presence of NPs, where Al was deposited on graphene as a mask for designed patterns. This method can substitute graphene etching via carbon hydrogenation using H2 at high temperature.

Electrical percolation thresholds of semiconducting single-walled carbon nanotube networks in field-effect transistors.

With the advances in the separation and purification of carbon nanotubes (CNTs), the use of highly pure metallic or semiconducting CNTs has practical merit in electronics applications. When highly pure CNTs are applied in various fields, CNT networks are preferred to individual CNTs. In such cases, the presence of an electrical path becomes crucial in the network. In this study, we report on the electrical percolation thresholds of semiconducting single-walled carbon nanotube (s-SWCNT) networks, and their electrical characteristics in field-effect transistors (FET). Using the Monte Carlo method, s-SWCNT networks were randomly generated in the channels defined by the source-drain electrodes of the FET. On the basis of percolation theory, the percolation thresholds of s-SWCNT networks were obtained at different channel lengths (2, 6, and 10 µm) by generating random s-SWCNT networks 100 times. The network density corresponding to the electrical percolation threshold was theoretically gained at each channel length. As a result, the network densities at the percolation thresholds for the channel lengths of 2, 6, and 10 µm were 6.8, 9.0, and 9.9 tube µm(-2), respectively. In addition, SPICE calculations were performed for each s-SWCNT network, constituting an electrical path between the source and the drain electrodes of the FET. In all channel lengths, the on/off ratio of the s-SWCNT networks was enhanced with increasing network density. Finally, we found a power law relationship between the on/off ratio of the s-SWCNT networks and the network density at the percolation threshold.

Electrical percolation characteristics of metallic single-walled carbon nanotube networks by vacancy evolution.

In the present study, we demonstrate the effect of vacancy evolution on high-pure metallic single-walled carbon nanotube (m-SWCNT) networks by observing the electrical characteristics of the networks on the field-effect transistor (FET). By catalytic oxidation using Co catalyst, vacancy evolution was gradually realized in high-pure m-SWCNT formed as networks between source-drain electrodes of FET. The evolution of vacancy defects in the m-SWCNT networks gradually proceeded by heating FET several times at 250 °C in air. Atomic force microscopic images showed the presence of the Co catalyst nanoparticles, which were evenly formed in the m-SWCNT networks between the electrodes of FET. Vacancy evolution was confirmed by monitoring the D- and G-bands in the Raman spectra measured from the networks after every step of the catalytic oxidation. With vacancy evolution in the networks, the D-band gradually increased, and the transconductance of m-SWCNT networks drastically decreased. In addition, the metallic behaviour of the m-SWCNT networks was converted into a semiconducting one with an on/off ratio of 2.7.

Electrical conductivity enhancement of metallic single-walled carbon nanotube networks by CoO decoration.

We report that the decoration of metallic single-walled carbon nanotube (m-SWCNT) networks with cobalt(ii) oxide (CoO) can improve the electrical conductivity of the networks. To measure the electrical conductivity, we prepared m-SWCNT networks between the source and drain electrodes of field-effect transistors (FETs). Then, the amount of CoO nanoparticles (NPs) used for decoration was controlled by treating the FETs with different volumes of a solution containing Co(NO3)2·6H2O. Atomic force microscopy imaging showed that CoO NPs were intensively deposited on the intertubular junction of the m-SWCNT networks. X-ray photoelectron spectroscopy confirmed that the oxidation state of the Co element on m-SWCNT was CoO. Raman spectra revealed that heavy decoration of CoO increased the D-band intensity of the m-SWCNT, indicating that the CoO NPs disordered the sp(2) hybridized carbon atoms of the m-SWCNT via decoration. The electrical conductivity of the m-SWCNT networks was enhanced up to 28 times after decoration, and this was attributed to the CoO NPs connecting the m-SWCNTs at junctions of the networks.

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.