The Electronic Impact of Light-Induced Degradation in CsPbBr3 Perovskite Nanocrystals at Gold Interfaces.

The understanding of the interfacial properties in perovskite devices under irradiation is crucial for their engineering. In this study we show how the electronic structure of the interface between CsPbBr3 perovskite nanocrystals (PNCs) and Au is affected by irradiation of X-rays, near-infrared (NIR), and ultraviolet (UV) light. The effects of X-ray and light exposure could be differentiated by employing low-dose X-ray photoelectron spectroscopy (XPS). Apart from the common degradation product of metallic lead (Pb0), a new intermediate component (Pbint) was identified in the Pb 4f XPS spectra after exposure to high intensity X-rays or UV light. The Pbint component is determined to be monolayer metallic Pb on-top of the Au substrate from underpotential deposition (UPD) of Pb induced from the breaking of the perovskite structure allowing for migration of Pb2+.

Direct Measurements of Interfacial Photovoltage and Band Alignment in Perovskite Solar Cells Using Hard X-ray Photoelectron Spectroscopy.

A heterojunction is the key junction for charge extraction in many thin film solar cell technologies. However, the structure and band alignment of the heterojunction in the operating device are often difficult to predict from calculations and, due to the complexity and narrow thickness of the interface, are difficult to measure directly. In this study, we demonstrate a technique for direct measurement of the band alignment and interfacial electric field variations of a fully functional lead halide perovskite solar cell structure under operating conditions using hard X-ray photoelectron spectroscopy (HAXPES). We describe the design considerations required in both the solar cell devices and the measurement setup and show results for the perovskite, hole transport, and gold layers at the back contact of the solar cell. For the investigated design, the HAXPES measurements suggest that 70% of the photovoltage was generated at this back contact, distributed rather equally between the hole transport material/gold interface and the perovskite/hole transport material interface. In addition, we were also able to reconstruct the band alignment at the back contact at equilibrium in the dark and at open circuit under illumination.

Unravelling the ultrafast charge dynamics in PbS quantum dots through resonant Auger mapping of the sulfur K-edge.

There is a great fundamental interest in charge dynamics of PbS quantum dots, as they are promising for application in photovoltaics and other optoelectronic devices. The ultrafast charge transport is intriguing, offering insight into the mechanism of electron tunneling processes within the material. In this study, we investigated the charge transfer times of PbS quantum dots of different sizes and non-quantized PbS reference materials by comparing the propensity of localized or delocalized decays of sulfur 1s core hole states excited by X-rays. We show that charge transfer times in PbS quantum dots decrease with excitation energy and are similar at high excitation energy for quantum dots and non-quantized PbS. However, at low excitation energies a distinct difference in charge transfer time is observed with the fastest charge transfer in non-quantized PbS and the slowest in the smallest quantum dots. Our observations can be explained by iodide ligands on the quantum dots creating a barrier for charge transfer, which reduces the probability of interparticle transfer at low excitation energies. The probability of intraparticle charge transfer is limited by the density of available states which we describe according to a wave function in a quantum well model. The stronger quantum confinement effect in smaller PbS quantum dots is manifested as longer charge transfer times relative to the larger quantum dots at low excitation energies.

Thermal degradation of lead halide perovskite surfaces.

Commercial use of lead halide perovskites requires improved thermal stability and therefore a better understanding of their degradation mechanisms. The thermal degradation of three clean perovskite single crystal surfaces (MAPbI3, MAPbBr3, FAPbBr3) was investigated using synchrotron-based photoelectron spectroscopy. Central findings are that the halide has a large impact on thermal stability and that the degradation of formamidnium results in the formation of a new organic species at the FAPbBr3 crystal surface.

The degree of electron itinerancy and shell closing in the core-ionized state of transition metals probed by Auger-photoelectron coincidence spectroscopy.

Auger-photoelectron coincidence spectroscopy (APECS) has been used to examine the electron correlation and itinerance effects in transition metals Cu, Ni and Co. It is shown that the LVV Auger, in coincidence with 2p photoelectrons, spectra can be represented using atomic multiplet positions if the 3d-shell is localized (atomic-like) and with a self-convoluted valence band for band-like (itinerant) materials as explained using the Cini-Sawatzky model. For transition metals, the 3d band changes from band-like to localized with increasing atomic number, with the possibility of a mixed behavior. Our result shows that the LVV spectra of Cu can be represented by atomic multiplet calculations, those of Co resemble the self-convolution of the valence band and those of Ni are a mixture of both, consistent with the Cini-Sawatzky model.

The impact of chemical composition of halide surface ligands on the electronic structure and stability of lead sulfide quantum dot materials.

There is a high fundamental interest in the surface and bulk chemistry of quantum dot (QD) solids, as they have proven to be very promising materials in optoelectronic devices. The choice of surface ligands for quantum dots in solid devices determines many of the film properties, as the ligands influence for example the doping density, chemical stability and charge transport. Lead halide ligands have developed as the main ligand of choice for lead sulfide quantum dots, as they have been shown to passivate quantum dot surfaces and enhance the chemical stability. In this study, we successfully varied the ligand composition on the surface of PbS quantum dot films from pure lead iodide to pure lead bromide and investigated its influence on the chemical and electronic structure of the QD solids using hard X-ray photoelectron spectroscopy (HAXPES). Furthermore, we developed a surface treatment to prevent the surface oxidation of a bulk PbS reference sample. Through measurements of this sample and of lead halide reference samples, we were able to assign the contributions of different chemical bonding to the Pb 4f core level and of different atomic orbitals to the valence band spectral shape of the QD materials. Overall, we found that the valence band edge position was very similar for all different iodide:bromide ratios and that all investigated compositions were able to protect the quantum dot surfaces within solid films from oxidation. However, the ligand composition significantly influences the sample stability under X-rays. The iodide rich QD solids showed the highest stability with very little to no chemical changes over several hours of X-ray exposure, while the bromide rich QD solids changed already within the first hour of exposure.

Evidence of hybridization states at the donor/acceptor interface: case ofm-MTDATA/PPT.

We performed a spectroscopic study on them-MTDATA (donor) and PPT (acceptor) molecular vertical heterostructure. The electronic properties of the donor/acceptor interface have been comprehensively characterized by synchrotron radiation-based photoelectron spectroscopy and near-edge x-ray absorption fine structure. The spectroscopic results reveal the existence of new hybridization states in the original molecular energy gap, likely attributed to the interaction between the donor and the acceptor molecules at the interface. Such hybridized states can have a significant impact on the charge transport in organic electronic devices based on donor-acceptor molecules and can explain the increased efficiency of device using such molecules.

Wafer-sized WS2 monolayer deposition by sputtering.

We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A1g-E2g and A1g-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WSx (x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.

Clarifying the Adsorption of Triphenylamine on Au(111): Filling the HOMO-LUMO Gap.

In this article, we analyze the electronic structure modifications of triphenylamine (TPA), a well-known electron donor molecule widely used in photovoltaics and optoelectronics, upon deposition on Au(111) at a monolayer coverage. A detailed study was carried out by synchrotron radiation-based photoelectron spectroscopy, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, scanning tunneling microscopy (STM), and ab initio calculations. We detect a new feature in the pre-edge energy region of the N K-edge NEXAFS spectrum that extends over 3 eV, which we assign to transitions involving new electronic states. According to our calculations, upon adsorption, a number of new unoccupied electronic states fill the energy region between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the free TPA molecule and give rise to the new feature in the pre-edge region of the NEXAFS spectrum. This finding highlights the occurrence of a considerable modification of the electronic structure of TPA. The appearance of new states in the HOMO-LUMO gap of TPA when adsorbed on Au(111) has crucial implications for the design of molecular nanoelectronic devices based on similar donor systems.

Separation of surface oxide from bulk Ni by selective Ni 3p photoelectron spectroscopy for chemical analysis in coincidence with Ni M-edge Auger electrons.

The chemical shift of core level binding energies makes electron spectroscopy for chemical analysis (ESCA) a workhorse analytical tool for science and industry. For some elements, close lying and overlapping spectral features within the natural life time broadening restrict applications. We establish how the core level binding energy chemical shift can be picked up experimentally by the additional selectivity through Auger electron photoelectron coincidence spectroscopy (APECS). Coincident measurement of Ni 3p photoemission with different MVV Auger regions from specific decay channels, narrows the 3p core-levels to a width of 1.2 eV, resolves the spin-orbit splitting of 1.6 eV and determines the chemical shift of Ni 3p levels of a Ni(111) single crystal and its oxidized surface layer to 0.6 eV.

Hard x-ray photoelectron spectroscopy: a snapshot of the state-of-the-art in 2020.

Hard x-ray photoelectron spectroscopy (HAXPES) is establishing itself as an essential technique for the characterisation of materials. The number of specialised photoelectron spectroscopy techniques making use of hard x-rays is steadily increasing and ever more complex experimental designs enable truly transformative insights into the chemical, electronic, magnetic, and structural nature of materials. This paper begins with a short historic perspective of HAXPES and spans from developments in the early days of photoelectron spectroscopy to provide an understanding of the origin and initial development of the technique to state-of-the-art instrumentation and experimental capabilities. The main motivation for and focus of this paper is to provide a picture of the technique in 2020, including a detailed overview of available experimental systems worldwide and insights into a range of specific measurement modi and approaches. We also aim to provide a glimpse into the future of the technique including possible developments and opportunities.

Tailoring ultra-fast charge transfer in MoS2.

Charge transfer dynamics are of importance in functional materials used in devices ranging from transistors to photovoltaics. The understanding of charge transfer in particular of how fast electrons tunnel away from an excited state and where they end up, is necessary to tailor materials used in devices. We have investigated charge transfer dynamics in different forms of the layered two-dimensional material molybdenum disulphide (MoS2, in single crystal, nanocrystalline particles and crystallites in a reduced graphene oxide network) using core-hole clock spectroscopy. By recording the electrons in the sulphur KLL Auger electron kinetic energy range we have measured the prevalence of localised and delocalised decays from a state created by core excitation using X-rays. We show that breaking the crystal symmetry of the single crystal into either particles or sheets causes the charge transfer from the excited state to occur faster, even more so when incorporating it in a graphene oxide network. The interface between the MoS2 and the reduced graphene oxide forms a Schottky barrier which changes the ratio between local and delocalised decays creating two distinct regions in the charge transfer dependent on the energy of the excited electron. Thereby we show that ultra-fast charge transfer in MoS2 can be tailored, a result which can be used in the design of emergent devices.

A method for studying pico to microsecond time-resolved core-level spectroscopy used to investigate electron dynamics in quantum dots.

Time-resolved photoelectron spectroscopy can give insights into carrier dynamics and offers the possibility of element and site-specific information through the measurements of core levels. In this paper, we demonstrate that this method can access electrons dynamics in PbS quantum dots over a wide time window spanning from pico- to microseconds in a single experiment carried out at the synchrotron facility BESSY II. The method is sensitive to small changes in core level positions. Fast measurements at low pump fluences are enabled by the use of a pump laser at a lower repetition frequency than the repetition frequency of the X-ray pulses used to probe the core level electrons: Through the use of a time-resolved spectrometer, time-dependent analysis of data from all synchrotron pulses is possible. Furthermore, by picosecond control of the pump laser arrival at the sample relative to the X-ray pulses, a time-resolution limited only by the length of the X-ray pulses is achieved. Using this method, we studied the charge dynamics in thin film samples of PbS quantum dots on n-type MgZnO substrates through time-resolved measurements of the Pb 5d core level. We found a time-resolved core level shift, which we could assign to electron injection and charge accumulation at the MgZnO/PbS quantum dots interface. This assignment was confirmed through the measurement of PbS films with different thicknesses. Our results therefore give insight into the magnitude of the photovoltage generated specifically at the MgZnO/PbS interface and into the timescale of charge transport and electron injection, as well as into the timescale of charge recombination at this interface. It is a unique feature of our method that the timescale of both these processes can be accessed in a single experiment and investigated for a specific interface.

In Situ Formation of Ge Nanoparticles by Annealing of Al-Ge-N Thin Films Followed by HAXPES and XRD.

Ge nanoparticles embedded in thin films have attracted a lot of attention due to their promising optical and electronic properties that can be tuned by varying the particle size and choice of matrix material. In this study, Ge nanoparticle formation was investigated for Al-Ge-N based thin films by simultaneous measurements of HAXPES and grazing incidence XRD during in situ annealing in vacuum conditions. As-deposited Al-Ge-N thin films, synthesized by reactive dc magnetron sputtering, consisted of a nanocrystalline (Al1-xGex)Ny solid solution and an amorphous tissue phase of Ge3Ny. Upon annealing to 750 °C, elemental Ge was formed shown by both HAXPES and XRD measurements, and N2 gas was released as measured by a mass spectrometer. Postannealed ex situ analysis by SEM and TEM showed that the elemental Ge phase formed spherical nanoparticles on the surface of the film, with an average size of 210 nm. As the annealing temperature increased further to 850 °C, the Ge particles on the film surface evaporated, while the phase segregation of Ge still could be observed within the film. Thus, these results show the possibility for a controlled synthesis of Ge nanoparticles through annealing of Al-Ge-N thin films to produce materials suitable for use in electronic or optoelectronic devices.

Investigation of the surface species during temperature dependent dehydrogenation of naphthalene on Ni(111).

The temperature dependent dehydrogenation of naphthalene on Ni(111) has been investigated using vibrational sum-frequency generation spectroscopy, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory with the aim of discerning the reaction mechanism and the intermediates on the surface. At 110 K, multiple layers of naphthalene adsorb on Ni(111); the first layer is a flat lying chemisorbed monolayer, whereas the next layer(s) consist of physisorbed naphthalene. The aromaticity of the carbon rings in the first layer is reduced due to bonding to the surface Ni-atoms. Heating at 200 K causes desorption of the multilayers. At 360 K, the chemisorbed naphthalene monolayer starts dehydrogenating and the geometry of the molecules changes as the dehydrogenated carbon atoms coordinate to the nickel surface; thus, the molecule tilts with respect to the surface, recovering some of its original aromaticity. This effect peaks at 400 K and coincides with hydrogen desorption. Increasing the temperature leads to further dehydrogenation and production of H2 gas, as well as the formation of carbidic and graphitic surface carbon.

Electronic Structure Characterization of Cross-Linked Sulfur Polymers.

Cross-linked polymers of elemental sulfur are of potential interest for electronic applications as they enable facile thin-film processing of an abundant and inexpensive starting material. Here, we characterize the electronic structure of a cross-linked sulfur/diisopropenyl benzene (DIB) polymer by a combination of soft and hard X-ray photoelectron spectroscopy (SOXPES and HAXPES). Two different approaches for enhancing the conductivity of the polymer are compared: the addition of selenium in the polymer synthesis and the addition of lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) during film preparation. For the former, we observe the incorporation of Se into the polymer structure resulting in a changed valence-band structure. For the latter, a Fermi level shift in agreement with p-type doping of the polymer is observed and also the formation of a surface layer consisting mostly of TFSI anions.

Partially Reversible Photoinduced Chemical Changes in a Mixed-Ion Perovskite Material for Solar Cells.

Metal halide perovskites have emerged as materials of high interest for solar energy-to-electricity conversion, and in particular, the use of mixed-ion structures has led to high power conversion efficiencies and improved stability. For this reason, it is important to develop means to obtain atomic level understanding of the photoinduced behavior of these materials including processes such as photoinduced phase separation and ion migration. In this paper, we implement a new methodology combining visible laser illumination of a mixed-ion perovskite ((FAPbI3)0.85(MAPbBr3)0.15) with the element specificity and chemical sensitivity of core-level photoelectron spectroscopy. By carrying out measurements at a synchrotron beamline optimized for low X-ray fluxes, we are able to avoid sample changes due to X-ray illumination and are therefore able to monitor what sample changes are induced by visible illumination only. We find that laser illumination causes partially reversible chemistry in the surface region, including enrichment of bromide at the surface, which could be related to a phase separation into bromide- and iodide-rich phases. We also observe a partially reversible formation of metallic lead in the perovskite structure. These processes occur on the time scale of minutes during illumination. The presented methodology has a large potential for understanding light-induced chemistry in photoactive materials and could specifically be extended to systematically study the impact of morphology and composition on the photostability of metal halide perovskites.