On-Chip Time-Domain Terahertz Spectroscopy of Superconducting Films below the Diffraction Limit.

Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ∼0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrometer based on semiconducting photoconductive switches with a bandwidth of 200 to 750 GHz. We measure the optical conductivity of a 7.5-µm wide NbN film across the superconducting transition, demonstrating spectroscopic signatures of the superconducting gap in a sample smaller than 2% of the Rayleigh diffraction limit. Our spectrometer features an interchangeable sample architecture, making it ideal for probing superconductivity, magnetism, and charge order in strongly correlated van der Waals materials.

Deuterated silicon dioxide for heterogeneous integration of ultra-low-loss waveguides.

Ultra-low-loss waveguide fabrication typically requires high-temperature annealing beyond 1000°C to reduce the hydrogen content in deposited dielectric films. However, realizing the full potential of an ultra-low loss will require the integration of active materials that cannot tolerate high temperature. Uniting ultra-low-loss waveguides with on-chip sources, modulators, and detectors will require a low-temperature, low-loss dielectric to serve as a passivation and spacer layers for complex fabrication processes. We report a 250°C deuterated silicon dioxide film for top cladding in ultra-low-loss waveguides. Using multiple techniques, we measure propagation loss below 12 dB/m for the entire 1200-1650 nm range and top-cladding material absorption below 1 dB/m in the S, C, and L bands.

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions.

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., Vg1 = -Vg2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm2 (or 6 µW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between Vg1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |Vg| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

Wideband Electrically-Pumped 1050 nm MEMS-Tunable VCSEL for Ophthalmic Imaging.

In this paper, we present a 1050 nm electrically-pumped micro-electro-mechanically-tunable vertical-cavity-surface-emitting-laser (MEMS-VCSEL) with a record dynamic tuning bandwidth of 63.8 nm, suitable for swept source optical coherence tomography (SS-OCT) imaging. These devices provide reduced cost & complexity relative to previously demonstrated optically pumped devices by obviating the need for a pump laser and associated hardware. We demonstrate ophthalmic SS-OCT imaging with the electrically-pumped MEMS-VCSEL at a 400 kHz axial scan rate for wide field imaging of the in vivo human retina over a 12 mm × 12 mm field and for OCT angiography of the macula over 6 mm × 6 mm & 3 mm × 3 mm fields to show retinal vasculature and capillary structure near the fovea. These results demonstrate the feasibility of electrically pumped MEMS-VCSELs in ophthalmic instrumentation, the largest clinical application of OCT. In addition, we estimate that the 3 dB coherence length in air is 225 meters ± 51 meters, far greater than required for ophthalmic SS-OCT and suggestive of other distance ranging applications.

Planar waveguides with less than 0.1 dB/m propagation loss fabricated with wafer bonding.

We demonstrate a wafer-bonded silica-on-silicon planar waveguide platform with record low total propagation loss of (0.045 ± 0.04) dB/m near the free space wavelength of 1580 nm. Using coherent optical frequency domain reflectometry, we characterize the group index, fiber-to-chip coupling loss, critical bend radius, and propagation loss of these waveguides.