Room temperature ferroelectricity in fluoroperovskite thin films.

The NaMnF3 fluoride-perovskite has been found, theoretically, to be ferroelectric under epitaxial strain becoming a promising alternative to conventional oxides for multiferroic applications. Nevertheless, this fluoroperovskite has not been experimentally verified to be ferroelectric so far. Here we report signatures of room temperature ferroelectricity observed in perovskite NaMnF3 thin films grown on SrTiO3. Using piezoresponse force microscopy, we studied the evolution of ferroelectric polarization in response to external and built-in electric fields. Density functional theory calculations were also performed to help understand the strong competition between ferroelectric and paraelectric phases as well as the profound influences of strain. These results, together with the magnetic order previously reported in the same material, pave the way to future multiferroic and magnetoelectric investigations in fluoroperovskites.

Antiferromagnetic Spin Seebeck Effect.

We report on the observation of the spin Seebeck effect in antiferromagnetic MnF_{2}. A device scale on-chip heater is deposited on a bilayer of MnF_{2} (110) (30 nm)/Pt (4 nm) grown by molecular beam epitaxy on a MgF_{2} (110) substrate. Using Pt as a spin detector layer, it is possible to measure the thermally generated spin current from MnF_{2} through the inverse spin Hall effect. The low temperature (2-80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin-flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9 T) are applied parallel to the easy axis of the MnF_{2} thin film. When the magnetic field is applied perpendicular to the easy axis, the spin-flop transition is absent, as expected.

Multiferroic BaCoF4 in Thin Film Form: Ferroelectricity, Magnetic Ordering, and Strain.

Multiferroic materials have simultaneous magnetic and ferroelectric long-range orders and can be potentially useful for a wide range of applications. Conventional ferroelectricity in oxide perovskites favors nonmagnetic electronic configurations of transition metal ions, thus limiting the number of intrinsic multiferroic materials. On the other hand, this is not necessarily true for multiferroic fluorides. Using molecular beam epitaxy, we demonstrate for the first time that the multiferroic orthorhombic fluoride BaCoF4 can be synthesized in thin film form. Ferroelectric hysteresis measurements and piezoresponse force microscopy show that the films are indeed ferroelectric. From structural information, magnetic measurements, and first-principles calculations, a modified magnetic ground state is identified which can be represented as a combination of bulk collinear antiferromagnetism with two additional canted spin orders oriented along orthogonal axes of the BaCoF4 unit cell. The calculations indicate that an anisotropic epitaxial strain is responsible for this unusual magnetic ground state.