Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence.

We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained by plan-view scanning electron microscopy. X-ray diffraction experiments are used to measure the inhomogeneous strain in the nanowire ensembles as well as the orientational distribution of the nanowires. The comparison of the results obtained for GaN nanowire ensembles prepared on bare Si(111) and AlN buffered 6H-SiC(0001) reveals that the main source of the inhomogeneous strain is the random distortions caused by the coalescence of adjacent nanowires. The magnitude of the strain inhomogeneity induced by nanowire coalescence is found not to be determined solely by the coalescence degree, but also by the mutual misorientation of the coalesced nanowires. The linewidth of the donor-bound exciton transition in photoluminescence spectra does not exhibit a monotonic increase with the coalescence degree. In contrast, the comparison of the root mean square strain with the linewidth of the donor-bound exciton transition reveals a clear correlation: the higher the strain inhomogeneity, the larger the linewidth.

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

GaN nanowire ensembles with axial In(x)Ga(1-x)N multi-quantum-wells (MQWs) were grown by molecular beam epitaxy. In a series of samples we varied the In content in the MQWs from almost zero to around 20%. Within the nanowire ensemble, the MQWs fluctuate strongly in composition and size. Statistical information about the composition was obtained from x-ray diffraction and Raman spectroscopy. Photoluminescence at room temperature was obtained in the range of 2.2 to 2.5 eV, depending on In content. Contrary to planar MQWs, the intensity increases with increasing In content. We compare the observed emission energies with transition energies obtained from a one-dimensional model, and conclude that several mechanisms for carrier localization affect the luminescence of these three-dimensional structures.

X-ray diffraction from nonperiodic layered structures with correlations: analytical calculation and experiment on mixed Aurivillius films.

X-ray diffraction from films consisting of layers with different thicknesses, structures and chemical contents is analysed. The disorder is described by probabilities for different sequences of layers. Closed analytical expressions for the diffracted X-ray intensity are obtained when the layers form a stationary Markov chain. The proposed model is applied to the diffraction data from epitaxial sodium bismuth titanate thin films with Aurivillius structure possessing such one-dimensional disorder. In this case, the disorder is caused by a random stacking of three and four perovskite units separated by bismuth oxide interlayers. The results of analytical calculations are in good agreement with the experimental data and indicate that the incorporation of sodium in the Bi(4)Ti(3)O(12) phase causes the formation of a fourth perovskite unit.

Two-dimensional coarsening kinetics of reconstruction domains: GaAs(001)-beta(2 x 4).

We study the nonconserved coarsening kinetics of a reconstructed semiconductor surface. The domain size evolution is obtained in situ by time-resolved surface x-ray diffraction. The system exhibits four equivalent domain types with two nonequivalent types of domain boundaries. Small domains are prepared by molecular beam epitaxy deposition of one GaAs layer. We find the correlation lengths of the domain size distribution to depend on time as l is proportional to t(0.42+/-0.05) in the half-order reflections and l is proportional to t(0.22+/-0.05) in the quarter-order reflections. The fraction of the higher energy domain boundaries increases as lnt.