Terahertz Magnetic and Lattice Excitations in van der Waals Ferromagnet VI3.

We use the synergy of infrared, terahertz, and Raman spectroscopies with DFT calculations to shed light on the magnetic and lattice properties of VI3. The structural transition at TS1 = 79 K is accompanied by a large splitting of polar phonon modes. Below TS1, strong ferromagnetic fluctuations are observed. The variations of phonon frequencies at 55 K induced by magnetoelastic coupling enhanced by spin-orbit interaction indicate the proximity of long-range ferromagnetic order. Below TC = 50 K, two Raman modes simultaneously appear and show dramatic softening in the narrow interval around the temperature TS2 of the second structural transition associated with the order-order magnetic phase transition. Below TS2, a magnon in the THz range appears in Raman spectra. The THz magnon observed in VI3 indicates the application potential of 2D van der Waals ferromagnets in ultrafast THz spintronics, which has previously been considered the exclusive domain of antiferromagnets.

Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories.

Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

Fingerprints of Critical Phenomena in a Quantum Paraelectric Ensemble of Nanoconfined Water Molecules.

We have studied the radio frequency dielectric response of a system consisting of separate polar water molecules periodically arranged in nanocages formed by the crystal lattice of the gemstone beryl. Below T = 20-30 K, quantum effects start to dominate the properties of the electric dipolar system as manifested by a crossover between the Curie-Weiss and the Barrett regimes in the temperature-dependent real dielectric permittivity ε'(T). When analyzing in detail the temperature evolution of the reciprocal permittivity (ε')-1 down to T ≈ 0.3 K and comparing it with the data obtained for conventional quantum paraelectrics, like SrTiO3, KTaO3, we discovered clear signatures of a quantum-critical behavior of the interacting water molecular dipoles: Between T = 6 and 14 K, the reciprocal permittivity follows a quadratic temperature dependence and displays a shallow minimum below 3 K. This is the first observation of "dielectric fingerprints" of quantum-critical phenomena in a paraelectric system of coupled point electric dipoles.

Unusual features of lattice dynamics in lawsonite near its phase transitions.

Lattice dynamics of a single crystal of lawsonite were studied over a broad range of frequencies (1 Hz to 20 THz) using impedance, THz time-domain and infrared spectroscopies. Based on polarized spectra of complex permittivity [Formula: see text] measured as a function of temperature between 10 K and 500 K, we analyzed the properties of the two known phase transitions-an antiferrodistortive one near [Formula: see text] and a ferroelectric one, occurring at [Formula: see text]. The former one is accompanied by a flat maximum in the THz-range permittivity [Formula: see text] near [Formula: see text], which is due to an overdamped polar excitation in the [Formula: see text] spectra reflecting the dynamics of water and hydroxyl groups. The strength of this mode decreases on cooling below [Formula: see text], and the mode vanishes below [Formula: see text] due to hydrogen ordering. At the pseudoproper ferroelectric phase transition, two independent anomalies in permittivity were observed. First, [Formula: see text] exhibits a peak at [Formula: see text] due to critical slowing down of a relaxation in the GHz range. Second, infrared and THz spectra revealed an optical phonon softening towards [Formula: see text] which causes a smaller but pronounced maximum in [Formula: see text]. Such anomaly, consisting in a soft mode polarized perpendicularly to the ferroelectric axis, is unusual in ferroelectrics.

A grease for domain walls motion in HfO2-based ferroelectrics.

A large coercive fieldECof HfO2based ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduceECby fabricating nanolaminate Hf0.5Zr0.5O2/ZrO2(HZZ) thin films is used, followed by an ensuing annealing process at a comparatively high temperature 700 °C. High-resolution electron microscopy imaging detects tetragonal-like domain walls between orthorhombic polar regions. These walls decrease the potential barrier of polarization reversal in HfO2based films compared to the conventional domain walls with a single non-polar spacer, causing about a 40% decrease inEC. Capacitance versus electric field measurements on HZZ thin film uncovered a substantial increase of dielectric permittivity near theECcompared to the conventional Hf0.5Zr0.5O2thin film, justifying the higher mobility of domain walls in the developed HZZ film. The tetragonal-like regions served as grease easing the movement of the domain wall and reducingEC.

Strain effect on magnetic-exchange-induced phonon splitting in NiO films.

NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffraction, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% (compressive) to 0.48% (tensile) yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ∼1% change of interatomic distances. The magnetic exchange-driven phonon splitting Δω in three different samples, with relaxed (i.e. zero) strain, 0.36% compressive strain and 0.48% tensile strain, was measured as a function of temperature. The Δω increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Δω is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J 1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing of J 1 with lattice expansion. Increase of Δω on cooling can be also explained by rising of J 1 with reduced temperature.

Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films.

MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition technique, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (0 0 1)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, in paramagnetic phase, the frequency of doubly-degenerate phonon increases with the strain, and splits below Néel temperature T N due to the magnetic-exchange interaction. The phonon splitting in the MnO (0 0 1) films is 20% larger than that of the bulk MnO. Films grown on (1 1 0)-oriented MgO substrates exhibit a huge phonon splitting already at room temperature due to the anisotropic in-plane compressive strain. Below T N, the lower-frequency phonon splits in the IR spectra and the higher-frequency phonon strongly hardens in AFM phase; these features are evidences for a spin-order-induced structural phase transition from tetragonal to a lower symmetry phase. Total phonon splitting is 55 cm-1 in (1 1 0)-oriented MnO film, which is more than twice the value in bulk MnO, but since the splitting is present already in paramagnetic phase, we cannot clearly correlate it with the value of exchange coupling constant. Nevertheless, at least observation of enhanced phonon splitting in strained MnO (0 0 1) films show that the exchange coupling could be enhanced by the compressive strain which supports recent theoretical predictions published by Wan et al (2016 Sci. Rep. 6 22743) and Fischer et al (2009 Phys. Rev. B 80 014408).

Targeted chemical pressure yields tuneable millimetre-wave dielectric.

Epitaxial strain can unlock enhanced properties in oxide materials, but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimetre-wave tuneable dielectric, the epitaxially strained 50-nm-thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper dielectric grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but the resulting atomically engineered superlattice material, (SrTiO3)n-m(BaTiO3)mSrO, enables low-loss, tuneable dielectric properties to be achieved with lower epitaxial strain and a 200% improvement in the figure of merit at commercially relevant millimetre-wave frequencies. As tuneable dielectrics are key constituents of emerging millimetre-wave high-frequency devices in telecommunications, our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.

Pb2MnTeO6 Double Perovskite: An Antipolar Anti-ferromagnet.

Pb2MnTeO6, a new double perovskite, was synthesized. Its crystal structure was determined by synchrotron X-ray and powder neutron diffraction. Pb2MnTeO6 is monoclinic (I2/m) at room temperature with a regular arrangement of all the cations in their polyhedra. However, when the temperature is lowered to ∼120 K it undergoes a phase transition from I2/m to C2/c structure. This transition is accompanied by a displacement of the Pb atoms from the center of their polyhedra due to the 6s(2) lone-pair electrons, together with a surprising off-centering of Mn(2+) (d(5)) magnetic cations. This strong first-order phase transition is also evidenced by specific heat, dielectric, Raman, and infrared spectroscopy measurements. The magnetic characterizations indicate an anti-ferromagnetic (AFM) order below TN ≈ 20 K; analysis of powder neutron diffraction data confirms the magnetic structure with propagation vector k = (0 1 0) and collinear AFM spins. The observed jump in dielectric permittivity near ∼150 K implies possible anti-ferroelectric behavior; however, the absence of switching suggests that Pb2MnTeO6 can only be antipolar. First-principle calculations confirmed that the crystal and magnetic structures determined are locally stable and that anti-ferroelectric switching is unlikely to be observed in Pb2MnTeO6.

Introduction to the special issue on ultrasonics and ferroelectrics.

The sixteen articles in this special section were presented at the 2013 IEEE Ultrasonics, Ferroelectrics, and Frequency Control (UFFC) Symposium that was held in Prague, the Czech Republic, from July 21-25, 2013.

Near constant loss regime in fast ionic conductors analyzed by impedance and NMR spectroscopies.

Universal dielectric response (UDR) and nearly constant loss (NCL) dispersive regimes have been investigated in fast ion conductors with perovskite and NASICON structure by using NMR and impedance spectroscopy (IS). In this study, the electrical behavior of La(0.5)Li(0.5)TiO3 (LLTO-05) perovskite and Li(1.2)Ti(1.8)Al(0.2)(PO4)3 (LTAP0-02) NASICON compounds was investigated. In both systems a three-dimensional network of conduction paths is present. In the Li-rich LLTO-05 sample, lithium and La are randomly distributed on A-sites of perovskites, but in LTAP0-02 Li and cation vacancies are preferentially disposed at M1 and M2 sites. In perovskite compounds, local motions produced inside unit cells are responsible for the large "near constant loss" regime detected at low temperatures, however, in the case of NASICON compounds, local motions not participating in long-range charge transport were not detected. In both analyzed systems long-range correlated motions are responsible for dc-conductivity values of ceramic grains near 10(-3) S cm(-1) at room temperature, indicating that low-temperature local motions, producing large NCL contribution, are not required to achieve the highest ionic conductivities.

Exploiting dimensionality and defect mitigation to create tunable microwave dielectrics.

The miniaturization and integration of frequency-agile microwave circuits--relevant to electronically tunable filters, antennas, resonators and phase shifters--with microelectronics offers tantalizing device possibilities, yet requires thin films whose dielectric constant at gigahertz frequencies can be tuned by applying a quasi-static electric field. Appropriate systems such as BaxSr1-xTiO3 have a paraelectric-ferroelectric transition just below ambient temperature, providing high tunability. Unfortunately, such films suffer significant losses arising from defects. Recognizing that progress is stymied by dielectric loss, we start with a system with exceptionally low loss--Srn+1TinO3n+1 phases--in which (SrO)2 crystallographic shear planes provide an alternative to the formation of point defects for accommodating non-stoichiometry. Here we report the experimental realization of a highly tunable ground state arising from the emergence of a local ferroelectric instability in biaxially strained Srn+1TinO3n+1 phases with n ≥ 3 at frequencies up to 125 GHz. In contrast to traditional methods of modifying ferroelectrics-doping or strain-in this unique system an increase in the separation between the (SrO)2 planes, which can be achieved by changing n, bolsters the local ferroelectric instability. This new control parameter, n, can be exploited to achieve a figure of merit at room temperature that rivals all known tunable microwave dielectrics.

Structural evolution and properties of solid solutions of hexagonal InMnO3 and InGaO3.

Solid solutions InMn(1-x)Ga(x)O(3) (0 ≤ x ≤ 1) have been investigated using magnetic, dielectric, specific heat, differential scanning calorimetry (DSC), and high-temperature powder synchrotron X-ray diffraction (HT-SXRD) measurements. It was found that samples with 0.5 ≤ x ≤ 1 crystallize in space group P6(3)/mmc with a ~ 3.32 Å and c ~ 11.9 Å, and samples with 0.0 ≤ x ≤ 0.4 crystallize in space group P6(3)cm with a ~ 5.8 Å and c ~ 11.6 Å at room temperature. HT-SXRD data revealed the existence of a P6(3)cm-to-P6(3)/mmc phase transition at about 480 K in InMn(0.6)Ga(0.4)O(3) and at 950 K in InMn(0.7)Ga(0.3)O(3). However, no dielectric, phonon, second-harmonic-generation, or DSC anomalies were found to be associated with these phase transitions. The phase transition should be improper ferroelectric from the symmetry point of view, but the above-mentioned experimental facts, together with the absence of ferroelectric hysteresis loops, revealed no evidence for ferroelectricity in the low-temperature P6(3)cm structure. We suggest that InMn(1-x)Ga(x)O(3) corresponds to a nonferroelectric phase of hexagonal RMnO(3) with P6(3)cm symmetry. The antiferromagnetic phase-transition temperature decreases from 118 K for x = 0 to 105 K for x = 0.1 and 73 K for x = 0.2, and no long-range magnetic ordering could be found for x ≥ 0.3. Specific heat anomalies associated with short-range magnetic ordering were observed for 0.0 ≤ x ≤ 0.5. InMn(1-x)Ga(x)O(3) with small Mn contents (0.8 ≤ x ≤ 0.98) has a bright-blue color.

A strong ferroelectric ferromagnet created by means of spin-lattice coupling.

Ferroelectric ferromagnets are exceedingly rare, fundamentally interesting multiferroic materials that could give rise to new technologies in which the low power and high speed of field-effect electronics are combined with the permanence and routability of voltage-controlled ferromagnetism. Furthermore, the properties of the few compounds that simultaneously exhibit these phenomena are insignificant in comparison with those of useful ferroelectrics or ferromagnets: their spontaneous polarizations or magnetizations are smaller by a factor of 1,000 or more. The same holds for magnetic- or electric-field-induced multiferroics. Owing to the weak properties of single-phase multiferroics, composite and multilayer approaches involving strain-coupled piezoelectric and magnetostrictive components are the closest to application today. Recently, however, a new route to ferroelectric ferromagnets was proposed by which magnetically ordered insulators that are neither ferroelectric nor ferromagnetic are transformed into ferroelectric ferromagnets using a single control parameter, strain. The system targeted, EuTiO(3), was predicted to exhibit strong ferromagnetism (spontaneous magnetization, approximately 7 Bohr magnetons per Eu) and strong ferroelectricity (spontaneous polarization, approximately 10 microC cm(-2)) simultaneously under large biaxial compressive strain. These values are orders of magnitude higher than those of any known ferroelectric ferromagnet and rival the best materials that are solely ferroelectric or ferromagnetic. Hindered by the absence of an appropriate substrate to provide the desired compression we turned to tensile strain. Here we show both experimentally and theoretically the emergence of a multiferroic state under biaxial tension with the unexpected benefit that even lower strains are required, thereby allowing thicker high-quality crystalline films. This realization of a strong ferromagnetic ferroelectric points the way to high-temperature manifestations of this spin-lattice coupling mechanism. Our work demonstrates that a single experimental parameter, strain, simultaneously controls multiple order parameters and is a viable alternative tuning parameter to composition for creating multiferroics.

Lattice dynamics and phase transitions in KNbO3 and K0.5Na0.5NbO3 ceramics.

Phonons in both ceramic samples KNbO(3) (KN) and K(0.5)Na(0.5)NbO(3) (KNN-50) were investigated from 10 to 900 K by means of Raman, infrared, and THz spectroscopy. First-order transitions from cubic to tetragonal phases were detected at about 755 K (in KN) and 710 K (in KNN-50), where the first component of the polarization appears. Transitions from the tetragonal to the orthorhombic phases take place around 510 and 475 K, respectively. The last transitions from orthorhombic to rhombohedral phases are strongly first-order type. T(C) is shifted from 200 K in KN to about 90 K in KNN-50. All Raman active modes below 200 cm(-1). disappear in KN but not in KNN-50. The overdamped soft mode present at high temperatures in the THz range changes its dielectric strength at each phase transition (when the corresponding component jumps to higher frequencies) and abruptly disappears from THz spectra in the rhombohedral phase, because it stiffens up to 200 cm(-1). This mode has lower frequency and higher dielectric strength in KNN-50.