Eco-Friendly Keratin-Based Additives in the Polymer Matrix to Enhance the Output of Triboelectric Nanogenerators.

A triboelectric nanogenerator (TENG) is an energy generator that converts mechanical energy into electrical energy using triboelectricity at a nanoscale. Given their potential application as power sources in electronic devices, various attempts have been made to improve their output performance. Here, we present an eco-friendly, low-cost, and facile fabrication method to enhance TENG characteristics with keratin protein additives. Keratin sources, human and cat hair, are processed into powder and added to the friction layer, which increases their positive charge affinity, thereby boosting the output performance of the TENG. The output performances of the keratin-added TENG (K-TENG) are measured in the vertical contact-separation mode, with both additives having the highest output values at 5 wt % load. The K-TENG generates more output voltage and current values than the pristine TENG by 90 and 208%, respectively. Hence, we conclude that this method would potentially promote TENG as a strong candidate for a competitive "green" energy harvesting device in future electronics applications.

Intaglio Contact Printing of Versatile Carbon Nanotube Composites and Its Applications for Miniaturizing High-Performance Devices.

Composites based on carbon nanotubes (CNTs) are promising patternable materials that can be engineered to incorporate the outstanding properties of CNTs into various applications via printing technologies. However, conventional printing methods for CNTs require further improvement to overcome the major drawbacks that limit the patterning resolution and target substrate. Herein, an intaglio contact printing method based on a CNT/paraffin composite is presented for realizing highly precise CNT network patterns without restrictions on the substrate. In this method, the CNT/paraffin composite can be patterned with a high resolution (<10 µm) and neatly transferred onto various substrates with a wide range of surface energies, including human skin. The patterned composite exhibits high durability against structural deformations, and structural damage caused by fatigue accumulation can be cured in a few seconds. In addition, miniaturized sensing and energy-harvesting applications are demonstrated with high performances. The present method facilitates the rapid fabrication of highly precise interdigitated electrodes via one-step printing, enabling high-performance operation and miniaturization of the devices. It is anticipated that these results will not only spur the further development of various applications of CNTs but also contribute to advances in soft lithography methods applicable to many fields of science and engineering.

CNT/High Mass Loading MnO2/Graphene-Grafted Carbon Cloth Electrodes for High-Energy Asymmetric Supercapacitors.

Flexible supercapacitor electrodes with high mass loading are crucial for obtaining favorable electrochemical performance but still challenging due to sluggish electron and ion transport. Herein, rationally designed CNT/MnO2/graphene-grafted carbon cloth electrodes are prepared by a "graft-deposit-coat" strategy. Due to the large surface area and good conductivity, graphene grafted on carbon cloth offers additional surface areas for the uniform deposition of MnO2 (9.1 mg cm-2) and facilitates charge transfer. Meanwhile, the nanostructured MnO2 provides abundant electroactive sites and short ion transport distance, and CNT coated on MnO2 acts as interconnected conductive "highways" to accelerate the electron transport, significantly improving redox reaction kinetics. Benefiting from high mass loading of electroactive materials, favorable conductivity, and a porous structure, the electrode achieves large areal capacitances without compromising rate capability. The assembled asymmetric supercapacitor demonstrates a wide working voltage (2.2 V) and high energy density of 10.18 mWh cm-3.

Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.

Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on a single Si-NW array composed of five nanowires aligned in parallel and connected in series to form NOT-logic circuits. The excellent flexibility of the fabricated device was confirmed by bending-cycling tests. The voltage-transfer curve of the NOT-logic circuits showed an inverting operation with a logic swing of -92% and voltage gain of -2.5.

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

Si-based flexible memristive systems constructed using top-down methods.

Si-based memristive systems consisting of Ag, amorphous Si, and heavily doped p-type Si nanowires were successfully constructed on plastic substrates through top-down methods, including the crystallographic wet etching of Si wafers, transfer onto plastic substrates, and thin film patterning. The memristive systems showed excellent memory characteristics and flexibility, such as intrinsic hysteric and rectifying behaviors, on/off resistance ratios of >1 × 10(5), and durability for up to 1000 bending cycles. The correlations between the Ag-filament-related nanostructures formed in amorphous Si and the resistance-switching behaviors were carefully examined with the tunneling current model, transmission electron microscopy, and secondary ion mass spectroscopy to explore the switching mechanism. Our study suggests the promising potential of the Si-based memristive systems for the development of next-generation flexible nonvolatile memory.

Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate.

We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 10(2). The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.

ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Top-gate ZnO nanowire field-effect transistors (FETs) with Al2O3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al2O3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its I(DS)-V(GS) characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift. The gate voltage in the pulse form was applied for 1 s, and the threshold voltage shift of I(DS)-V(GS) characteristics was extended from 0.3 to 0.8 V compared with that for the double sweep. In this ZnO nanowire FET, negative charge carriers originated from the gate electrode are stored in the Al2O3 layer for applied negative gate voltages, and they are extracted for applied positive gate voltages.

ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles.

The memory characteristics of top-gate single ZnO nanowire-based field-effect transistors (FETs) with floating gate nodes consisting of Au nanoparticles on top of the nanowire channels were investigated in this study. Au nanoparticles, synthesized by a thermal deposition of Au thin film and by a subsequent thermal annealing procedure, were embedded in between Al2O3 tunneling and control gate layers deposited on ZnO nanowire channels. For a representative single ZnO nanowire-based FET with floating gate nodes consisting of Au nanoparticles embedded between Al2O3 layers, its drain current versus gate voltage (I(DS)-V(DS)) characteristics for a double sweep in the gate voltage range from -4 to 4 V exhibit a clockwise hysteresis loop with a threshold voltage shift of deltaV(th) = 1.6 V, resulting from the tunneling of the charge carriers from the ZnO nanowire channel into the Au nanoparticles. In addition, the charge storage characteristic of threshold voltage shift with the elapsed time observed in this FET is also discussed in this paper.

Functional benefit after modification of radial forearm free flap for soft palate reconstruction.

OBJECTIVES: To compare the velopharyngeal function, swallowing and speech of the conventional and modified radial forearm free flap (RFFF) for soft palate reconstruction. METHODS: Retrospective clinical study. Twenty-eight patients who underwent oropharyngeal reconstruction with RFFF were divided into two groups: 10 patients had conventional folded RFFF and 18 patients underwent modified method. RESULTS: The average speech intelligibility score in modified RFFF group was 8.0+/-2.4, and 6.2+/-2.2 in conventional RFFF group (P<0.05). The nasalance was 27.4+/-7.8% in modified group and 38.6+/-2.7% in conventional group during no nasal passage reading and 43.6+/-7.3% in modified group, 55.2+/-7.6% in conventional group during high nasal passage reading (P<0.05). The subjective swallowing functional score was 2.8 in modified group and 2.1 in conventional group. CONCLUSION: The speech assessment and nasalance demonstrate a more favorable outcome in modified group than conventional group.

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I(on)/I(off) ratios were as high as ∼10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides.

The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.