Significant Role of Interfacial Spin-Orbit Coupling in the Spin-to-Charge Conversion in Pt/NiFe Heterostructure.

For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the spin pumping in YIG/Pt/NiFe/IrMn multilayers. Due to the exchange bias of NiFe/IrMn structure, the NiFe magnetization can be switched between magnetically unsaturated and saturated states by opposite resonance fields of YIG layer. The spin-pumping signal is found to decrease significantly when the NiFe magnetization is changed from the saturated state to the unsaturated state. Theoretical analysis indicates that the interfacial spin absorption is enhanced for the above-mentioned NiFe magnetic state change, which results in the increased and decreased spin flow in the Pt layer and across the Pt/NiFe interface, respectively. These results demonstrate that in our case the interfacial SOC effect at the Pt/NiFe interface is dominant over the bulk inverse spin Hall effect in the Pt layer. Our work reveals a significant role of interfacial SOC in the SCC in HM/FM heterostructure, which can promote the development of high-efficiency spintronic devices through interfacial engineering.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

Engineering optical mode ferromagnetic resonance in FeCoB films with ultrathin Ru insertion.

Ferromagnetic resonance (FMR) in soft magnetic films (SMFs) to a large extent determines the maximum working frequency of magnetic devices. The FMR frequency (fr) in an optical mode is usually much higher than that in the corresponding acoustic mode for exchange coupled ferromagnet/nonmagnet/ferromagnet (FM/NM/FM) trilayers. In this study, we prepared a 50 nm FeCoB film with uniaxial magnetic anisotropy (UMA), showing a high acoustic mode fr of 4.17 GHz. When an ultrathin Ru spacer was inserted in the very middle of the UMA-FeCoB film, the zero-field FMR was abruptly switched from an acoustic mode to an optical one with fr dramatically enhanced from 4.17 GHz to 11.32 GHz. Furthermore, the FMR mode can be readily tuned to optical mode only, acoustic mode only, or double mode by simply varying the applied filed, which provides a flexible way to design multi-band microwave devices.

Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions.

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO-ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal-insulator transition of the CoO(1-v) layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90, and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. The bipolar resistance switching is explained by the metal-insulator transition of CoO(1-v) layer due to the migration of oxygen ions between CoO(1-v) and ZnO(1-v).

Synthesis and characterization of PtRe alloy nanoparticles as electrocatalysts for methanol oxidation.

We report a new synthesis of PtRe alloy nanoparticles (NPs) and their electrocatalytic activity for methanol oxidation. PtRe alloy NPs with controlled composition were prepared by a capping agents-based colloidal method. In the synthesis, trioctylamine was used as high-boiling solvent, and oleylamine/oleic acid were employed as capping agents to control the particle size and dispersion. The PtRe NPs were fully characterized by TEM, EDX, XRD and XPS. The as-prepared PtRe NPs had a narrow size distribution, and displayed a good dispersion in hydrocarbon solvents. Carbon-supported PtRe catalysts were prepared by physical deposition of as-prepared particles on carbon powder, followed by the catalytic activation at 400 degrees C in Ar/H2. Electrochemical studies showed the PtRe catalysts had high activity for methanol electrooxidation.

Synthesis and magnetic properties of FePt nanoparticles with hard nonmagnetic shells.

Chemically synthesized FePt nanoparticles were coated with nonmagnetic SiO2 and MnO shells by sol-gel and polyol processes. TEM images show that the FePt/SiO2 nanoparticles exhibit a thick spherical shell. The size and morphology of the MnO shell can be controlled by changing the reaction temperature, the molar ratio of surfactants/Mn(acac)2, and/or the concentration of precursor. The morphology of the MnO shell can be either spherical-like or cubic-like, depending on whether the molar ratio of surfactants/Mn(acac)2 is less than or larger than 2. From XRD measurements, the spherical core/shell nanoparticles exhibit 3D random crystallographic orientation, while the cubic core/shell nanoparticles prefer (200) texture. The magnetic moment of FePt particles can be enhanced by coating with SiO2 and MnO shells. Furthermore, the agglomeration of FePt particles upon the thermal annealing can be significantly inhibited with SiO2 and MnO shells.

Effect of sintered grain growth on chemical ordering in binary FePt/Cu nanoparticle arrays.

Recent studies have shown a strong correlation between grain growth and chemical ordering in chemically synthesized FePt nanoparticles. In order to study this effect, we have prepared a series of samples in which 3.5 nm FePt nanoparticles are dispersed in a matrix of Cu nanoparticles. The samples were annealed at 600 degrees C and at 800 degrees C. Grain size was determined by XRD Scherrer analysis and time-dependent remanent coercivity measurements were made to determine the intrinsic remanent coercivity, Hcr0. For samples annealed at 600 degrees C, Hcr0 increases strongly with grain size up to approximately 5 nm and increases weakly with additional grain growth. By contrast, after annealing at 800 degrees C, Hcr0 appears nearly independent of grain size. The results suggest that isolated 3.5 nm FePt nanoparticles can be weakly ordered when annealed at 600 degrees C and sintering is necessary for significant chemical ordering.

Enhanced magnetic properties of self-assembled FePt nanoparticles with MnO shell.

Self-assembled FePt/MnO nanoparticles with different morphology and size were synthesized with a polyol process. With the MnO coating, FePt nanoparticles exhibit a high blocking temperature and magnetic moment. The low-temperature hysteresis loop of FePt nanoparticles can be shifted through the AFM pinning of the MnO shell. The aggregation of FePt nanoparticles during the L10 phase transformation can be significantly decreased by coating with the MnO shell.