Diffraction and thermal effect of a Bessel-Gaussian laser for Ag nanoparticle deposition.

Nanoparticles are known to sinter at much lower temperatures than the corresponding bulk or micro size particles. A laser-assisted sintering process is considered in this study to sinter Ag nanoparticles by dispensing Ag paste onto an indium tin oxide-coated Si substrate. The Gaussian beam of a CO2 laser source is propagated through axicon and biconvex lenses, and the resulting hollow beam is focused on the Ag paste with a hollow parabolic mirror. A Bessel-Gaussian irradiance distribution is obtained at the focal plane of the parabolic mirror due to the interference of the hollow laser cone. The Fresnel diffraction approximation is considered to determine the phasor of the laser and an analytical approach is implemented to calculate the irradiance distribution of the Bessel-Gaussian beam. This irradiance distribution is utilized as a heat source in a heat conduction model and the temperature distribution is analyzed for thin Ag films formed during the laser sintering of Ag nanoparticles. An analytical expression is obtained for the temperature distribution by solving the heat conduction equation using Fourier transform for finite media. The widths of the deposited Ag lines are predicted from the temperature profiles and the model predictions compare well with the experimental results. The isotherms are found to be geometrically noncongruent with convex and concave tips depending on the locally maximum and minimum irradiances of the Bessel-Gaussian beam, respectively. The convex and concave tips, however, appear in the same isotherm for sufficiently high substrate speed relative to the laser beam.

Invariance of the r2-ln(F) relationship and attainable precision in ultrafast laser ablation experiments.

Pursuing ever-smaller feature size in laser-based lithography is a research topic of vital importance to keep this technique competitive with other micro-/nano-fabrication methods. Features smaller than the diffraction-limited spot size can be obtained by "thresholding", which utilizes the deterministic nature of damage threshold with ultrashort laser pulses and is achieved by precisely tuning pulse energies so that only the central portion of the focal spot produces permanent modification. In this paper, we examine the formulation commonly used to describe thresholding and show that the relationship between feature size (r) and laser fluence (F) is invariant with respect to the nature of laser absorption. Verified by our experiments performed on metal, semiconductor, and dielectric samples, such invariance is used to predict the smallest feature size that can be achieved for different materials in a real-world system.

Reducing feature size in femtosecond laser ablation of fused silica by exciton-seeded photoionization: publisher's note.

This publisher's note contains corrections to Opt. Lett.45, 1994 (2020).OPLEDP0146-959210.1364/OL.385011.

Reducing feature size in femtosecond laser ablation of fused silica by exciton-seeded photoionization.

We demonstrate a method of laser ablation with reduced feature size by using a pair of ultrashort pulses that are partially overlapped in space. By tuning the delay between the two pulses, features within the overlapping area are obtained on the surface of fused silica. The observed dependence of the feature position on delays longer than the free-carrier lifetime indicates an ionization pathway initiated by self-trapped excitons. This method could be used to enhance the resolution of laser-based lithography.

Time-resolved measurements of optical properties in ultrafast laser interaction with polypropylene.

Time-resolved, single-shot measurements are performed to determine the reflectance, transmittance, and absorptance in ultrafast laser interaction with polypropylene for a wide range of laser pulse energies. An ellipsoidal mirror is used to collect the majority of the reflected light, enabling the detection of plasma emission starting at about 40 ns after the incident pulse. The measured transmittance is explained by a model that takes into account different effective absorption channels, and the non-linear absorption coefficient is estimated, which suggests that the non-linear absorption originates from the two-step or two-photon absorption through overtone. The results are useful for selecting laser parameters in the processing of polymeric materials.

Non-dimensional groups for electrospray modes of highly conductive and viscous nanoparticle suspensions.

Multiple modes of atomization in electrosprays are affected by viscosity, surface tension and electrical conductivity of the semiconductor nanosuspensions. While the effect of gravity is dominant in the dripping mode, the electric field degenerates the electrospray mechanism into a microdripping mode that can potentially allow the deposition of semiconductor nanodots on a substrate. Drop size and frequency of droplet formation are obtained as functions of non-dimensional parameters, which agree well with experimental data. The analysis shows that it is possible to produce the desired size and frequency of ejection of monodisperse droplets by manipulating the electrode voltage for any nanosuspension.

Laser-induced subwavelength structures by microdroplet superlens.

Nanoscale patterns on rigid or flexible substrates are of considerable interest in modern nanophotonics and optoelectronics devices. Subwavelength structures are produced in this study by using a laser beam and microdroplets that carry nanoparticles to the deposition substrate. These droplets are generated from an aqueous suspension of nanoparticles by electrospray and dispensed through a conical hollow laser beam so that laser-droplet interactions occur immediately above the substrate surface. Each microdroplet serves the dual role as a nanoparticle carrier to the substrate and as a superlens for focusing the laser beam to a subwavelength diameter. This focused beam vaporizes the droplet and sinters the nanoparticles on the substrate. The deposition of subwavelength nanostructures and thin films on a silicon wafer are demonstrated in this paper. This process may be applied to produce novel nanophotonics and electronics devices involving a variety of subwavelength patterns including an ordered array of semiconductor nanoparticles.

Thermal effects of ultrafast laser interaction with polypropylene.

Ultrafast lasers have been used for high-precision processing of a wide range of materials, including dielectrics, semiconductors, metals and polymer composites, enabling numerous applications ranging from micromachining to photonics and life sciences. To make ultrafast laser materials processing compatible with the scale and throughput needed for industrial use, it is a common practice to run the laser at a high repetition rate and hence high average power. However, heat accumulation under such processing conditions will deteriorate the processing quality, especially for polymers, which typically have a low melting temperature. In this paper, an analytical solution to a transient, two-dimensional thermal model is developed using Duhamel's theorem and the Hankel transform. This solution is used to understand the effect of laser parameters on ultrafast laser processing of polypropylene (PP). Laser cutting experiments are carried out on PP sheets to correlate with the theoretical calculation. This study shows that, in laser cutting, the total energy absorbed in the material and the intensity are two important figures of merit to predict the cutting performance. Heat accumulation is observed at low scanning speeds and high repetition rates, leading to significant heat-affected zone and even burning of the material, which is supported by experimental data and modelling results. It is found that heat accumulation can be avoided by a proper choice of the processing condition.

Gaussian beam diffraction by two-dimensional refractive index modulation for high diffraction efficiency and large deflection angle.

The propagation of Gaussian beams is analyzed for an acousto-optic deflector by varying the refractive index in two-dimensions with a row of phased array piezoelectric transducers. Inhomogeneous domains of phase grating are produced by operating the transducers at different phase shifts, resulting in two-dimensional index modulation of periodic and sinc function profiles. Also different phase shifts provide a mechanism to steer the grating lobe in various directions and, therefore, the incident angle of the laser beam on the grating plane is automatically modified without moving the beam. Additionally, the acoustic frequency can be varied to achieve the Bragg condition for the new incident angle of the laser beam so that the diffraction efficiency of the deflector is maximized. The Gaussian beam is expressed in terms of planes and the second order coupled mode theory is implemented to analyze the diffraction of the beam. The diffraction efficiency is found to be nearly unity for optimal operating parameters of the acousto-optic device.

Electrospray mode transition of microdroplets with semiconductor nanoparticle suspension.

Electrosprays operate in several modes depending on the flow rate and electric potential. This allows the deposition of droplets containing nanoparticles into discrete nanodot arrays to fabricate various electronic devices. In this study, seven different suspensions with varying properties were investigated. In the dripping mode, the normalized dropsize decreases linearly with electric capillary number, Ca e , (ratio of electric to surface tension forces) up to Ca e ≈ 1.0. The effect of viscous forces is found to be negligible in the dripping mode since the capillary number is small. For flow rates with low Reynolds number, the mode changes to microdripping mode, and then to a planar oscillating microdripping mode as Ca e increases. The normalized dropsize remains nearly constant at 0.07 for Ca e > 3.3. The microdripping mode which is important for depositing discrete array of nanodots is found to occur in the range, 2 ≤ Ca e ≤ 2.5. The droplet frequency increases steadily from dripping to microdripping mode, but stays roughly constant in the oscillating microdripping mode. This work provides a physical basis by which the flow rate and the voltage can be chosen for any nanosuspension to precisely operate in the microdripping mode at a predetermined dropsize and droplet frequency.

Two-dimensional refractive index modulation by phased array transducers in acousto-optic deflectors.

Acousto-optic deflectors are photonic devices that are used for scanning high-power laser beams in advanced microprocessing applications such as marking and direct writing. The operation of conventional deflectors mostly relies on one-dimensional sinusoidal variation of the refractive index in an acousto-optic medium. Sometimes static phased array transducers, such as step configuration or planar configuration transducer architecture, are used to tilt the index modulation planes for achieving higher performance and higher resolution than a single transducer AO device. However, the index can be modulated in two dimensions, and the modulation plane can be tilted arbitrarily by creating dynamic phase gratings in the medium using phased array transducers. This type of dynamic two-dimensional acousto-optic deflector can provide better performance using, for example, a large deflection angle and high diffraction efficiency. This paper utilizes an ultrasonic beam steering approach to study the two-dimensional strain-induced index modulation due to the photoelastic effect. The modulation is numerically simulated, and the effects of various parameters, such as the operating radiofrequency of the transducers, the ultrasonic beam steering angle, and different combinations of pressure on each element of the transducer array, are demonstrated.

Two-dimensional analytic modeling of acoustic diffraction for ultrasonic beam steering by phased array transducers.

Phased array ultrasonic transducers enable modulating the focal position of the acoustic waves, and this capability is utilized in many applications, such as medical imaging and non-destructive testing. This type of transducers also provides a mechanism to generate tilted wavefronts in acousto-optic deflectors to deflect laser beams for high precision advanced laser material processing. In this paper, a theoretical model is presented for the diffraction of ultrasonic waves emitted by several phased array transducers into an acousto-optic medium such as TeO2 crystal. A simple analytic expression is obtained for the distribution of the ultrasonic displacement field in the crystal. The model prediction is found to be in good agreement with the results of a numerical model that is based on a non-paraxial multi-Gaussian beam (NMGB) model.

Dynamic two-dimensional refractive index modulation for high performance acousto-optic deflector.

The performance of an acousto-optic deflector is studied for two-dimensional refractive index that varies as periodic and sinc functions in the transverse and longitudinal directions, respectively, with respect to the direction of light propagation. Phased array piezoelectric transducers can be operated at different phase shifts to produce a two-dimensionally inhomogeneous domain of phase grating in the acousto-optic media. Also this domain can be steered at different angles by selecting the phase shift appropriately. This mechanism of dynamically tilting the refractive index-modulated domain enables adjusting the incident angle of light on the phase grating plane without moving the light source. So the Bragg angle of incidence can be always achieved at any acoustic frequency, and consequently, the deflector can operate under the Bragg diffraction condition at the optimum diffraction efficiency. Analytic solutions are obtained for the Bragg diffraction of plane waves based on the second order coupled mode theory, and the diffraction efficiency is found to be unity for optimal index modulations at certain acoustic parameters.

Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector.

An uncooled photon detector is fabricated for the mid-wave infrared (MWIR) wavelength of 4.21 µm by doping an n-type 4H-SiC substrate with gallium using a laser doping technique. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 µm. This energy level was confirmed by optical absorption spectroscopy. The detection mechanism involves photoexcitation of carriers by the photons of this wavelength absorbed in the semiconductor. The resulting changes in the carrier densities at different energy levels modify the refractive index and, therefore, the reflectance of the semiconductor. This change in the reflectance constitutes the optical response of the detector, which can be probed remotely with a laser beam such as a He-Ne laser and the power of the reflected probe beam can be measured with a conventional laser power meter. The noise mechanisms in the probe laser, silicon carbide MWIR detector, and laser power meter affect the performance of the detector in regards to aspects such as the responsivity, noise equivalent temperature difference (NETD), and detectivity. For the MWIR wavelengths of 4.21 and 4.63 µm, the experimental detectivity of the optical photodetector of this study was found to be 1.07×10(10) cm·Hz(1/2)/W, while the theoretical value was 1.11×10(10) cm·Hz(1/2)/W. The values of NETD are 404 and 15.5 mK based on experimental data for an MWIR radiation source with a temperature of 25°C and theoretical calculations, respectively.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 µm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21 µm wavelength.

Laser optical gas sensor by photoexcitation effect on refractive index.

Laser optical gas sensors are fabricated by using the crystalline silicon carbide polytype 6H-SiC, which is a wide-bandgap semiconductor, and tested at high temperatures up to 650 degrees C. The sensor operates on the principle of semiconductor optics involving both the semiconductor and optical properties of the material. It is fabricated by doping 6H-SiC with an appropriate dopant such that the dopant energy level matches the quantum of energy of the characteristic radiation emitted by the combustion gas of interest. This radiation changes the electron density in the semiconductor by photoexcitation and, thereby, alters the refractive index of the sensor. The variation in the refractive index can be determined from an interference pattern. Such patterns are obtained for the reflected power of a He-Ne laser of wavelength 632.8 nm as a function of temperature. SiC sensors have been fabricated by doping two quadrants of a 6H-SiC chip with Ga and Al of dopant energy levels E(V)+0.29 eV and E(V)+0.23 eV, respectively. These doped regions exhibit distinct changes in the refractive index of SiC in the presence of carbon dioxide (CO(2)) and nitrogen monoxide (NO) gases respectively. Therefore Ga- and Al-doped 6H-SiC can be used for sensing CO(2) and NO gases at high temperatures, respectively.