Electron-Induced Perpendicular Graphene Sheets Embedded Porous Carbon Film for Flexible Touch Sensors.

Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility, superior electrical conductivity, and high surface area, which are proved to be one of the most promising candidates of stretching and wearable sensors. However, polarized electric charges need to overcome the barrier of graphene sheets to cross over flakes to penetrate into the electrode, as the graphene planes are usually parallel to the electrode surface. By introducing electron-induced perpendicular graphene (EIPG) electrodes incorporated with a stretchable dielectric layer, a flexible and stretchable touch sensor with "in-sheet-charges-transportation" is developed to lower the resistance of carrier movement. The electrode was fabricated with porous nanostructured architecture design to enable wider variety of dielectric constants of only 50-µm-thick Ecoflex layer, leading to fast response time of only 66 ms, as well as high sensitivities of 0.13 kPa-1 below 0.1 kPa and 4.41 MPa-1 above 10 kPa, respectively. Moreover, the capacitance-decrease phenomenon of capacitive sensor is explored to exhibit an object recognition function in one pixel without any other integrated sensor. This not only suggests promising applications of the EIPG electrode in flexible touch sensors but also provides a strategy for internet of things security functions.

Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas.

High-index III-V semiconductor nanoantennas have gained great attention for enhanced nonlinear light-matter interactions, in the past few years. However, the complexity of nonlinear emission profiles imposes severe constraints on practical applications, such as in optical communications and integrated optoelectronic devices. These complexities include the lack of unidirectional nonlinear emission and the severe challenges in switching between forward and backward emissions, due to the structure of the susceptibility tensor of the III-V nanoantennas. Here, we propose a solution to both issues via engineering the nonlinear tensor of the nanoantennas. The special nonlinear tensorial properties of zinc-blende material can be used to engineer the nonlinear characteristics via growing the nanoantennas along different crystalline orientations. Based on the nonlinear multipolar effect, we have designed and fabricated (110)-grown GaAs nanoantennas, with engineered tensorial properties, embedded in a transparent low-index material. Our technique provides an approach not only for unidirectional second-harmonic generation (SHG) forward or backward emission but also for switching from one to another. Importantly, switching the SHG emission directionality is obtained only by rotating the polarization of the incident light, without the need for physical variation of the antennas or the environment. This characteristic is an advantage, as compared to other nonlinear nanoantennas, including (100)- and (111)-grown III-V counterparts or silicon and germanium nanoantennas. Indeed, (110)-GaAs nanoantennas allow for engineering the nonlinear nanophotonic systems including nonlinear "Huygens metasurfaces" and offer exciting opportunities for various nonlinear nanophotonics technologies, such as nanoscale light routing and light sources, as well as multifunctional flat optical elements.

Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas.

Second-harmonic generation (SHG) in resonant dielectric Mie-scattering nanoparticles has been hailed as a powerful platform for nonlinear light sources. While bulk-SHG is suppressed in elemental semiconductors, for example, silicon and germanium due to their centrosymmetry, the group of zincblende III-V compound semiconductors, especially (100)-grown AlGaAs and GaAs, have recently been presented as promising alternatives. However, major obstacles to push the technology toward practical applications are the limited control over directionality of the SH emission and especially zero forward/backward radiation, resulting from the peculiar nature of the second-order nonlinear susceptibility of this otherwise highly promising group of semiconductors. Furthermore, the generated SH signal for (100)-GaAs nanoparticles depends strongly on the polarization of the pump. In this work, we provide both theoretically and experimentally a solution to these problems by presenting the first SHG nanoantennas made from (111)-GaAs embedded in a low index material. These nanoantennas show superior forward directionality compared to their (100)-counterparts. Most importantly, based on the special symmetry of the crystalline structure, it is possible to manipulate the SHG radiation pattern of the nanoantennas by changing the pump polarization without affecting the linear properties and the total nonlinear conversion efficiency, hence paving the way for efficient and flexible nonlinear beam-shaping devices.

Radiation tolerance of two-dimensional material-based devices for space applications.

Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth's atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive γ-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies.

Nonlinear Generation of Vector Beams From AlGaAs Nanoantennas.

The quest for nanoscale light sources with designer radiation patterns and polarization has motivated the development of nanoantennas that interact strongly with the incoming light and are able to transform its frequency, radiation, and polarization patterns. Here, we demonstrate dielectric AlGaAs nanoantennas for efficient second harmonic generation, enabling the control of both directionality and polarization of nonlinear emission. This is enabled by specialized III-V semiconductor nanofabrication of high-quality AlGaAs nanostructures embedded in optically transparent low-index material, thus allowing for simultaneous forward and backward nonlinear emission. We show that the nanodisk AlGaAs antennas can emit second harmonic in preferential direction with a backward-to-forward ratio of up to five and can also generate complex vector polarization beams, including beams with radial polarization.

Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process.

We report the fabrication of GaN nanopillar arrays with good structural uniformity using the top-down approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of anti-reflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the epilayer. The measured quantum efficiency of the nanopillars is comparable to that of an epitaxially grown GaN epilayer.

Wavelength selective filter based on polarization control in a photonic bandgap structure with a defect.

We present a technique for achieving wavelength specific half-wave retardation upon reflection from an asymmetric one-dimensional photonic band-gap structure with a defect. The approach is based on a high finesse Gires-Tournois type interferometer and makes use of the large mode splitting of TE and TM defect modes that occurs in structures with a wide photonic band-gap. We use this structure to demonstrate a polarization-based selective tuneable filter with a narrow pass-band and wide rejection-band.

Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal.

We demonstrate the control of the mode degeneracy when a liquid crystal (LC) is infiltrated into an InGaAsP membrane photonic crystal nanocavity with embedded InAs quantum dots. Mode splitting exists in the anisotropic nematic LC state, and not in the unfilled or isotropic LC state. The degeneracy lifting of the quadrupole mode is attributed to the different interactions of the two orthogonal basis modes of the degenerate mode with the two components of the refractive index of the LC. The interpretation is supported by the quantitative agreement between the experimental results and the three-dimensional finite-difference time-domain computations.

Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive index.

The sensitivities of resonant wavelengths of photonic crystal (PhC) membrane nanocavities with embedded InAs quantum dots to the ambient refractive index are reported for use in (bio) chemical sensing. The resonances for the different modes of several point-defect type cavities are obtained by photoluminescence measurements. Systematic trends of the variation of sensitivity with increase of the overlap of the modes with the PhC holes are observed for varying cavity type as well as for a given mode within a cavity type. A maximum sensitivity of approximately 300 nm/RIU (refractive index unit) is observed, corresponding to approximately 25% mode overlap with the holes and complete infiltration with the aqueous solution.

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides.

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm. We also give results showing room temperature lasing in MIM waveguides, with approximately 310 nm wide semiconductor cores which propagate a transverse electric mode.