Parabolic-Gaussian Double Quantum Wells under a Nonresonant Intense Laser Field.

In this paper, we investigate the electronic and optical properties of an electron in both symmetric and asymmetric double quantum wells that consist of a harmonic potential with an internal Gaussian barrier under a nonresonant intense laser field. The electronic structure was obtained by using the two-dimensional diagonalization method. To calculate the linear and nonlinear absorption, and refractive index coefficients, a combination of the standard density matrix formalism and the perturbation expansion method was used. The obtained results show that the electronic and thereby optical properties of the considered parabolic-Gaussian double quantum wells could be adjusted to obtain a suitable response to specific aims with parameter alterations such as well and barrier width, well depth, barrier height, and interwell coupling, in addition to the applied nonresonant intense laser field.

Harmonic-Gaussian Symmetric and Asymmetric Double Quantum Wells: Magnetic Field Effects.

In this study, we considered the linear and non-linear optical properties of an electron in both symmetrical and asymmetrical double quantum wells, which consist of the sum of an internal Gaussian barrier and a harmonic potential under an applied magnetic field. Calculations are in the effective mass and parabolic band approximations. We have used the diagonalization method to find eigenvalues and eigenfunctions of the electron confined within the symmetric and asymmetric double well formed by the sum of a parabolic and Gaussian potential. A two-level approach is used in the density matrix expansion to calculate the linear and third-order non-linear optical absorption and refractive index coefficients. The potential model proposed in this study is useful for simulating and manipulating the optical and electronic properties of symmetric and asymmetric double quantum heterostructures, such as double quantum wells and double quantum dots, with controllable coupling and subjected to externally applied magnetic fields.

Theoretical Study of the Exciton Binding Energy and Exciton Absorption in Different Hyperbolic-Type Quantum Wells under Applied Electric, Magnetic, and Intense Laser Fields.

In this study, we investigated the exciton binding energy and interband transition between the electron and heavy-hole for the single and double quantum wells which have different hyperbolic-type potential functions subject to electric, magnetic, and non-resonant intense laser fields. The results obtained show that the geometric shapes of the structure and the applied external fields are very effective on the electronic and optical properties. In the absence of the external fields, the exciton binding energy is a decreasing function of increasing well sizes except for the strong confinement regime. Therefore, for all applied external fields, the increase in the well widths produces a red-shift at the absorption peak positions. The magnetic field causes an increase in the exciton binding energy and provides a blue-shift of the absorption peak positions corresponding to interband transitions. The effect of the electric field is quite pronounced in the weak confinement regime, it causes localization in opposite directions of the quantum wells of the electron and hole, thereby weakening the Coulomb interaction between them, causing a decrease in exciton binding energy, and a red-shift of the peak positions corresponding to the interband transitions. Generally, an intense laser field causes a decrease in the exciton binding energy and produces a red-shift of the peak positions corresponding to interband transitions.

Optical Properties of Cylindrical Quantum Dots with Hyperbolic-Type Axial Potential under Applied Electric Field.

In this paper, we have researched the electronic and optical properties of cylindrical quantum dot structures by selecting four different hyperbolic-type potentials in the axial direction under an axially-applied electric field. We have considered a position-dependent effective mass model in which both the smooth variation of the effective mass in the axial direction adjusted to the way the confining potentials change and its abrupt change in the radial direction have been considered in solving the eigenvalue differential equation. The calculations of the eigenvalue equation have been implemented considering both the Dirichlet conditions (zero flux) and the open boundary conditions (non-zero flux) in the planes perpendicular to the direction of the applied electric field, which guarantees the validity of the results presented in this study for quasi-steady states with extremely high lifetimes. We have used the diagonalization method combined with the finite element method to find the eigenvalues and eigenfunction of the confined electron in the cylindrical quantum dots. The numerical strategies that have been used for the solution of the differential equations allowed us to overcome the multiple problems that the boundary conditions present in the region of intersection of the flat and cylindrical faces that form the boundary of the heterostructure. To calculate the linear and third-order nonlinear optical absorption coefficients and relative changes in the refractive index, a two-level approach in the density matrix expansion is used. Our results show that the electronic and, therefore, optical properties of the structures focused on can be adjusted to obtain a suitable response for specific studies or goals by changing structural parameters such as the widths and depths of the potentials in the axial direction, as well as the electric field intensity.

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications.

In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current-voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.

Effects of Intense Laser Field on Electronic and Optical Properties of Harmonic and Variable Degree Anharmonic Oscillators.

In this paper, we calculated the electronic and optical properties of the harmonic oscillator and single and double anharmonic oscillators, including higher-order anharmonic terms such as the quartic and sextic under the non-resonant intense laser field. Calculations are made within the effective mass and parabolic band approximations. We have used the diagonalization method by choosing a wave function based on the trigonometric orthonormal functions to find eigenvalues and eigenfunctions of the electron confined within the harmonic and anharmonic oscillator potentials under the non-resonant intense laser field. A two-level approach in the density matrix expansion is used to calculate the linear and third-order nonlinear optical absorption coefficients. Our results show that the electronic and optical properties of the structures we focus on can be adjusted to obtain a suitable response to specific studies or aims by changing the structural parameters such as width, depth, coupling between the wells, and applied field intensity.

First Study on the Electronic and Donor Atom Properties of the Ultra-Thin Nanoflakes Quantum Dots.

Nanoflakes ultra-thin quantum dots are theoretically studied as innovative nanomaterials delivering outstanding results in various high fields. In this work, we investigated the surface properties of an electron confined in spherical ultra-thin quantum dots in the presence of an on-center or off-center donor impurity. Thus, we have developed a novel model that leads us to investigate the different nanoflake geometries by changing the spherical nanoflake coordinates (R, α, ϕ). Under the infinite confinement potential model, the study of these nanostructures is performed within the effective mass and parabolic band approximations. The resolution of the Schrödinger equation is accomplished by the finite difference method, which allows obtaining the eigenvalues and wave functions for an electron confined in the nanoflakes surface. Through the donor and electron energies, the transport, optoelectronic, and surface properties of the nanostructures were fully discussed according to their practical significance. Our findings demonstrated that these energies are more significant in the small nanoflakes area by altering the radius and the polar and azimuthal angles. The important finding shows that the ground state binding energy depends strongly on the geometry of the nanoflakes, despite having the same surface. Another interesting result is that the presence of the off-center shallow donor impurity permits controlling the binding energy, which leads to adjusting the immense behavior of the curved surface nanostructures.

Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field.

Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe-CdTe core-shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system's azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe-CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.

Effect of the High-Frequency Laser Radiation on the Nonlinear Optical Properties of n-Type Double δ-Doped GaAs Quantum Wells.

In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of n-type double δ-doped GaAs quantum well is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the coefficients of nonlinear optical rectification and second and third harmonic generation are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of non-resonant intense laser field. The results show that the coefficients of nonlinear optical rectification and second and third harmonic generation are strongly affected by the non-resonant intense laser field.

Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.

Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.