High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors.

Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (µFE) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cm2V-1s-1). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In2O3 (In2O3:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In2O3:H TFTs fabricated at 300 °C exhibit superior switching properties with µFE = 139.2 cm2V-1s-1, a subthreshold swing of 0.19 Vdec-1, and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In2O3:H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In2O3:H TFTs have a great potential for use in future transparent or flexible electronics applications.

Seeding the drainage canal of a wastewater treatment system for the natural rubber industry with rubber for the enhanced removal of organic matter and nitrogen.

Current pretreatment methods for wastewater from natural rubber (NR) factories either have low rubber recovery efficiency or are costly to operate. A wastewater treatment system was developed that combines a pretreatment canal (PTC) seeded with rubber, an anaerobic baffled reactor (ABR), and a down-flow hanging sponge (DHS) reactor. The PTC is simple to implement and contributes to not only rubber recovery but also organic matter removal in the ABR and nitrogen removal in the DHS reactor. In experiments, the PTC recovered 16.6% of residual rubber through coagulation. The ABR increased the chemical oxygen demand removal efficiency and methane recovery compared with other anaerobic reactors treating raw NR wastewater. The DHS reactor removed 30.7% of total inorganic nitrogen (TIN) by nitrification, anaerobic ammonia oxidation and denitrification. Feeding the bottom stage of the DHS reactor with sodium acetate solution increased the TIN removal efficiency to 87.8%. The water quality of the final effluent achieved the Vietnamese standards for the NR industry. Microbial community analysis was performed to identify the dominant microorganisms and mechanisms in the PTC, ABR, and DHS reactor.

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors.

We successfully demonstrated a transition from a metallic InOx film into a nondegenerate semiconductor InOx:H film. A hydrogen-doped amorphous InOx:H (a-InOx:H) film, which was deposited by sputtering in Ar, O2, and H2 gases, could be converted into a polycrystalline InOx:H (poly-InOx:H) film by low-temperature (250 °C) solid-phase crystallization (SPC). Hall mobility increased from 49.9 cm2V-1s-1 for an a-InOx:H film to 77.2 cm2V-1s-1 for a poly-InOx:H film. Furthermore, the carrier density of a poly-InOx:H film could be reduced by SPC in air to as low as 2.4 × 1017 cm-3, which was below the metal-insulator transition (MIT) threshold. The thin film transistor (TFT) with a metallic poly-InOx channel did not show any switching properties. In contrast, that with a 50 nm thick nondegenerate poly-InOx:H channel could be fully depleted by a gate electric field. For the InOx:H TFTs with a channel carrier density close to the MIT point, maximum and average field effect mobility (µFE) values of 125.7 and 84.7 cm2V-1s-1 were obtained, respectively. We believe that a nondegenerate poly-InOx:H film has great potential for boosting the µFE of oxide TFTs.

Non-aerated single-stage nitrogen removal using a down-flow hanging sponge reactor as post-treatment for nitrogen-rich wastewater treatment.

A laboratory-scale experiment is conducted to remove nitrogen from nitrogen-rich wastewater using a down-flow hanging sponge (DHS) reactor. Effluent from an anaerobic-aerobic system for treating synthetic natural rubber wastewater, which still contains high levels of ammonia, was used as nitrogen-rich wastewater. Experimental period was divided into four phases based whether a carbon source was fed to the DHS reactor. The highest nitrogen removal efficiency (59.5 ±â€¯5.4%) was achieved during phase 4, when a sodium acetate solution was fed into bottom section of the DHS reactor. In the DHS reactor, the nitrification occurred in the upper and middle sections. Then, after adding the sodium acetate solution, denitrification occurred. The final chemical oxygen demand, ammonia, and total inorganic nitrogen concentrations in the DHS reactor effluent were 37 ±â€¯24 mg/L, 34 ±â€¯5 mgN/L, and 42 ±â€¯8 mgN/L, respectively. These concentrations were sufficient to meet the effluent standards of the Vietnamese natural rubber industry, which are the strictest in South-East Asia. The dominant bacteria in the sludge retained by the reactor's sponge media were the nitrifying bacteria Nitrosovibrio (0.2%) and Nitrospira (0.2-0.3%), the denitrifying bacteria Hylemonella (1.0-13.7%), Pseudoxanthomonas (1.2-2.1%), and Amaricoccus (2.4-3.5%), and the anammox bacterium Candidatus Brocadia (0.1-0.2%). Significant amounts of the nitrogen-fixing bacterium Xanthobacter (11.2-14.8%) and the rubber-degrading bacterium Gordonia (11.0-28.6%) were also found in the DHS reactor. These bacteria were thus considered to be the key microbes for nitrogen removal in a DHS reactor fed with a carbon source for denitrification.