An all-optical quantum gate in a semiconductor quantum dot.

We report coherent optical control of a biexciton (two electron-hole pairs), confined in a single quantum dot, that shows coherent oscillations similar to the excited-state Rabi flopping in an isolated atom. The pulse control of the biexciton dynamics, combined with previously demonstrated control of the single-exciton Rabi rotation, serves as the physical basis for a two-bit conditional quantum logic gate. The truth table of the gate shows the features of an all-optical quantum gate with interacting yet distinguishable excitons as qubits. Evaluation of the fidelity yields a value of 0.7 for the gate operation. Such experimental capability is essential to a scheme for scalable quantum computation by means of the optical control of spin qubits in dots.

Manipulation of the spin memory of electrons in n-GaAs.

We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.

Biexciton quantum coherence in a single quantum dot.

Nondegenerate (two-wavelength) two-photon absorption using coherent optical fields is used to show that there are two different quantum mechanical pathways leading to formation of the biexciton in a single quantum dot. Of specific importance to quantum information applications is the resulting coherent dynamics between the ground state and the biexciton from the pathway involving only optically induced exciton/biexciton quantum coherence. The data provide a direct measure of the biexciton decoherence rate which is equivalent to the decoherence of the Bell state in this system, as well as other critical optical parameters.

Rabi oscillations of excitons in single quantum dots.

Transient nonlinear optical spectroscopy, performed on excitons confined to single GaAs quantum dots, shows oscillations that are analogous to Rabi oscillations in two-level atomic systems. This demonstration corresponds to a one-qubit rotation in a single quantum dot which is important for proposals using quantum dot excitons for quantum computing. The dipole moment inferred from the data is consistent with that directly obtained from linear absorption studies. The measurement extends the artificial atom model of quantum dot excitonic transitions into the strong-field limit, and makes possible full coherent optical control of the quantum state of single excitons using optical pi pulses.

Near-field coherent spectroscopy and microscopy of a quantum dot system.

We combined coherent nonlinear optical spectroscopy with nano-electron volt energy resolution and low-temperature near-field microscopy with subwavelength resolution (

Electron and nuclear spin interactions in the optical spectra of single GaAs quantum dots.

Fine and hyperfine splittings arising from electron, hole, and nuclear spin interactions in the magneto-optical spectra of individual localized excitons are studied. We explain the magnetic field dependence of the energy splitting through competition between Zeeman, exchange, and hyperfine interactions. An unexpectedly small hyperfine contribution to the splitting close to zero applied field is described well by the interplay between fluctuations of the hyperfine field experienced by the nuclear spin and nuclear dipole/dipole interactions.

Lock-in holography using optically addressed multiple-quantum-well spatial light modulators.

Perpendicular-field multiple-quantum-well optically addressed spatial light modulators have a response that saturates at high writing intensity. This limits the diffraction efficiency of low-fringe-visibility holograms. This effect is suppressed by use of the ability of these structures to subtract images rapidly. The modulator is exposed to a hologram with a spatially uniform beam, which is incoherent with the hologram, superimposed on top of it. Pulsing the hologram synchronously with the device drive voltage but leaving the uniform beam constant in time can build up the diffraction to large values even when the fringe visibility is low.

Gallium arsenide metal-semiconductor-metal photodiodes as optoelectronic mixers for microwave single-sideband modulation.

Gallium arsenide (GaAs) metal-semiconductor-metal (MSM) photodetectors have unique properties including high-bandwidth, linearity, and biphase response that make them suitable as mixers and programmable weights for microwave and communications applications. An optical technique for microwave single-sideband modulation that uses GaAs MSM photodiodes as mixers is reported. It uses MSM Schottky photodiodes formed in a GaAs/Al(0.3)Ga(0.7)As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single-sideband modulation of the microwave signal. Radio frequency and undesired-sideband suppression of 36 and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors was > or = 29 GHz.

Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors.

New planar GaAs heterojunction bipolar phototransistors have been designed and demonstrated. The devices use a GaAs/Al(0.3)Ga(0.7) As molecular-beam-epitaxy materials system with an Al(0.3)Ga(0.7) As passivated, 10-nm-thick base; a depleted, high-low emitter; and a low emitter-base capacitance. Electrical contact to the emitter is made by a set of parallel, ohmic fingers and to the collector by an ohmic contact formed in a large, approximately 1.48-microm deep via. Rise times in response to impulse optical excitation at 810 nm were 747-891 ps except at the two lowest optical excitation powers measured. Photocurrent gains measured at 810 and 850 nm were 0.67-19, depending on experimental conditions. These devices are promising for use in heterodyne photodetector arrays for coherent optical processing channelizers requiring a 100-MHz bandwidth.