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1.
ACS Appl Mater Interfaces ; 7(31): 17131-7, 2015 Aug 12.
Artigo em Inglês | MEDLINE | ID: mdl-26200473

RESUMO

Organic nanolayers attract much attention for the isolation and adhesion promotion of the Cu line and insulator in Cu interconnection of microelectronic devices. This paper proposes a strategy for selective formation of adhesion nanolayer on the insulator surface with etching it on Cu surface by Cu-oxide-assisted pyrolysis. After deposition of a uniform polyelectrolyte layer on both SiO2 and Cu surfaces, heat treatment at 350 °C in ambient nitrogen was applied. Then, a larger thickness decrease was observed on the polyelectrolyte layer on Cu when compared to that on SiO2. According to the TDS and XPS analysis, the polyelectrolyte layer was relatively stable on SiO2 up to the intrinsic decomposition temperature of the material, but on the Cu surface it decomposed to volatile small molecules at a lower temperature due to Cu2O-assisted oxidization. This substrate dependent selective pyrolysis was examined for 100 nm width Cu lines and SiO2 spaces, and then a patterned polyelectrolyte layer on the SiO2 surface was obtained with a single nanometer scale edge resolution.

2.
Opt Express ; 22(13): 16418-23, 2014 Jun 30.
Artigo em Inglês | MEDLINE | ID: mdl-24977890

RESUMO

We report the efficient poling of an electro-optic (EO) polymer in a hybrid TiO(2)/electro-optic polymer multilayer waveguide modulator on mesoporous sol-gel silica cladding. The mesoporous sol-gel silica has nanometer-sized pores and a low refractive index of 1.24, which improves mode confinement in the 400-nm-thick EO polymer film in the modulators and prevents optical absorption from the lower Au electrode, thereby resulting in a lower half-wave voltage of the modulators. The half-wave voltage (Vπ) of the hybrid modulator fabricated on the mesoporous sol-gel silica cladding is 6.0 V for an electrode length (Le) of 5 mm at a wavelength of 1550 nm (VπLe product of 3.0 V·cm) using a low-index guest-host EO polymer (in-device EO coefficient of 75 pm/V).

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