RESUMO
Based on previous reports on the optical microscopy contrast of mechanically exfoliated few layer CrCl 3 transferred on 285 nm and 270 nm SiO 2 on Si(100), we focus on the experimental determination of an effective mean complex refractive index via a fitting analysis based on the Fresnel equations formalism. Accordingly, the layer and wavelength-dependent absorbance and reflectance are calculated. Layer and wavelength-dependent optical contrast curves are then evaluated demonstrating that the contrast is significantly high only around well-defined wavelength bands. This is validated a posteriori, by experimental UV-Vis absorbance data. The present study aims to show the way towards the most reliable determination of thickness of the 2D material flakes during exfoliation.
In this work, we focus on a fast and accurate determination of the number of layers and thickness of two-dimensional (2D) CrCl 3 flakes. Like exfoliated graphite, MoS 2 or CrI 3 , CrCl 3 has many interesting aspects for its physical properties, namely the magnetic ones. As Raman characterization cannot be used in the case of CrCl 3 for its insensitivity to the flake thickness, optical contrast, as obtained by an optical microscope equipped with a digital camera, can be suitable to determine the number of exfoliated layers in a single flake. Without any additional equipment, the contrast, as routinely optimized by using specific silicon oxide (270 and 285 nm thickness) on Si wafers, can be recorded and compared with Fresnel calculations for the interference. As a result, fitting of the experimental contrast as a function of average values of light wavelength, real and imaginary refraction index provides good sensitivity to the flake thickness and useful determination of the optical parameters. The latter ones are often different from their bulk properties. In addition to optical parameters, the determination is also independent from the light source characteristics. The present approach represents in this a way a precious, fast and cheap way to determine a crucial quantity of the 2D materials flakes production.
RESUMO
Two-dimensional (2D) magnets such as chromium trihalides CrX3 (X = I, Br, Cl) represent a frontier for spintronics applications and, in particular, CrCl3 has attracted research interest due its relative stability under ambient conditions without rapid degradation, as opposed to CrI3. Herein, mechanically exfoliated CrCl3 flakes are characterized at the atomic scale and the electronic structures of pristine, oxidized, and defective monolayer CrCl3 phases are investigated employing density functional theory (DFT) calculations, scanning tunneling spectroscopy (STS), core level X-ray photoemission spectroscopy (XPS), and valence band XPS and ultraviolet photoemission spectroscopy (UPS). As revealed by atomically resolved transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis, the CrCl3 flakes show spontaneous surface oxidation upon air exposure with an extrinsic long-range ordered oxidized O-CrCl3 structure and amorphous chromium oxide formation on the edges of the flakes. XPS proves that CrCl3 is thermally stable up to 200 °C having intrinsically Cl vacancy-defects whose concentration is tunable via thermal annealing up to 400 °C. DFT calculations, supported by experimental valence band analysis, indicate that pure monolayer (ML) CrCl3 is an insulator with a band gap of 2.6 eV, while the electronic structures of oxidized and Cl defective phases of ML CrCl3, extrinsically emerging in exfoliated CrCl3 flakes, show in-gap spin-polarized states and relevant modifications of the electronic band structures.
RESUMO
The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.
