Mechanically robust textile-based strain and pressure multimodal sensors using metal nanowire/polymer conducting fibers.

Recently, multifunctional textile-based sensory systems have attracted a lot of attention because of the growing demand for wearable electronics performing real-time monitoring of various body signals and movements. In particular, textile-based physical sensors often require multimodal sensing capabilities to accurately detect and identify multiple mixed stimuli simultaneously. Here, we demonstrate a textile-based strain/pressure multimodal sensor using high-k poly(vinylidene fluoride)-co-hexafluoropropylene ion-gel film and silver nanowire/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate-coated conducting fibers. The multimodal sensors exhibited reliable strain and pressure-sensing characteristics for strain ranges up to 25% and pressures up to 50 kPa, respectively, with a relatively high strain gauge factor (up to 2.74) and pressure sensitivity (0.32 kPa-1). More importantly, the textile-based multimodal sensor was able to detect the strain and pressure independently, allowing facile discrimination of strain and pressure. Using this approach, we demonstrated a textile-based multimodal sensor that incorporates one strain sensor and two pressure sensors detecting multiple weights simultaneously.

Highly Sensitive Textile-Based Capacitive Pressure Sensors Using PVDF-HFP/Ionic Liquid Composite Films.

Textile-based pressure sensors have garnered considerable interest in electronic textiles due to their diverse applications, including human-machine interface and healthcare monitoring systems. We studied a textile-based capacitive pressure sensor array using a poly(vinylidene fluoride)-co-hexafluoropropylene (PVDF-HFP)/ionic liquid (IL) composite film. By constructing a capacitor structure with Ag-plated conductive fiber electrodes that are embedded in fabrics, a capacitive pressure sensor showing high sensitivity, good operation stability, and a wide sensing range could be created. By optimizing the PVDF-HFP:IL ratio (6.5:3.5), the fabricated textile pressure sensors showed sensitivity of 9.51 kPa-1 and 0.69 kPa-1 in the pressure ranges of 0-20 kPa and 20-100 kPa, respectively. The pressure-dependent capacitance variation in our device was explained based on the change in the contact-area formed between the multi-filament fiber electrodes and the PVDF-HFP/IL film. To demonstrate the applicability and scalability of the sensor device, a 3 × 3 pressure sensor array was fabricated. Due to its matrix-type array structure and capacitive sensing mechanism, multi-point detection was possible, and the different positions and the weights of the objects could be identified.

In-Plane Amorphous Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces.

Here, we demonstrate a side-gated in-plane structure of solution-processed amorphous oxide semiconductor ionotronic devices and logic circuits enabled by ion gel gate dielectrics with a monolithically integrated nanoscale passivation architecture. The large capacitance of the electric double layer (EDL) in the ion gel allows a device structure to be a side gate geometry, forming an in-plane structured amorphous In-Ga-Zn-O (a-IGZO) ionotronic transistor, which can be translated into a simplified logic gate configuration with a low operation voltage. Particularly, the monolithic passivation of the coplanar electrodes offers advantages over conventional inhomogeneous passivation, mitigating unintentional parasitic leakage current through the ion gel dielectric layer. More importantly, the monolithically integrated passivation over electrodes was readily obtained with a complementary metal-oxide semiconductor-compatible photochemical process by employing a controlled ultraviolet light manipulation under ozone ambient, which introduced not only much enhanced electrical characteristics but also a scalable device architecture. We investigated various electrical behaviors of the side-gated a-IGZO ionotronic transistor based on EDL, which is called an electric double layer transistor (EDLT), and logic circuits enabled by photochemically realized monolithic aluminum oxide (AlOX) passivation comparing to the native or polymerized passivation layer, which reveals that the photoassisted AlOX secures high-performance a-IGZO EDLTs with a low off current (<5.23 × 10-8 A), high on/off ratio (>1.87 × 105), and exceptional high carrier mobility (>14.5 cm2 V-1 s-1). Owing to the significantly improved electrical characteristics, an inverter circuit was successfully achieved with broad operation voltages from an ultralow VDD of 1 mV to 1.5 V, showing a fully logical voltage transfer characteristic with a gain of more than 4 V V-1.