Record-High Thermoelectric Performance in Al-Doped ZnO via Anderson Localization of Band Edge States.

Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( P F max = $PF_{\text{max}} =$  21.5 µW cm-1 K-2 and z T max = $zT_{\text{max}} =$  0.5 at 1100 K in Zn 0.96 Al 0.04 O ${\rm Zn}_{0.96} {\rm Al}_{0.04}{\rm O}$ ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

Thermoelectric properties of Bi1-xPbxCu1-xSeO oxyselenides.

In this work, Bi1-xPbxCu1-x SeO (x = 0, 0.02, 0.06, and 0.08) compounds were synthesized by a solid state reaction followed by spark plasma sintering. The effect of simultaneous Bi to Pb substitution and Cu vacancy introduction on thermoelectric properties was investigated systematically. The power factor was significantly enhanced, contributing to the increase in the zT value. As a result, the zTmax of 0.75 at 773 K was obtained for the Bi0.94Pb0.06Cu0.94SeO sample. To reveal the factors constraining the zTmax of Bi1-xPbxCuSeO-based oxyselenides, a further careful analysis of literature data was performed. We highlighted that for Pb-doped oxyselenides, the power factor is almost independent of the synthesis technique, while the lattice thermal conductivity is the main property determining zTmax and is highly affected by the synthesis method.

Laser-Ablative Synthesis of Silicon-Iron Composite Nanoparticles for Theranostic Applications.

The combination of photothermal and magnetic functionalities in one biocompatible nanoformulation forms an attractive basis for developing multifunctional agents for biomedical theranostics. Here, we report the fabrication of silicon-iron (Si-Fe) composite nanoparticles (NPs) for theranostic applications by using a method of femtosecond laser ablation in acetone from a mixed target combining silicon and iron. The NPs were then transferred to water for subsequent biological use. From structural analyses, it was shown that the formed Si-Fe NPs have a spherical shape and sizes ranging from 5 to 150 nm, with the presence of two characteristic maxima around 20 nm and 90 nm in the size distribution. They are mostly composed of silicon with the presence of a significant iron silicide content and iron oxide inclusions. Our studies also show that the NPs exhibit magnetic properties due to the presence of iron ions in their composition, which makes the formation of contrast in magnetic resonance imaging (MRI) possible, as it is verified by magnetic resonance relaxometry at the proton resonance frequency. In addition, the Si-Fe NPs are characterized by strong optical absorption in the window of relative transparency of bio-tissue (650-950 nm). Benefiting from such absorption, the Si-Fe NPs provide strong photoheating in their aqueous suspensions under continuous wave laser excitation at 808 nm. The NP-induced photoheating is described by a photothermal conversion efficiency of 33-42%, which is approximately 3.0-3.3 times larger than that for pure laser-synthesized Si NPs, and it is explained by the presence of iron silicide in the NP composition. Combining the strong photothermal effect and MRI functionality, the synthesized Si-Fe NPs promise a major advancement of modalities for cancer theranostics, including MRI-guided photothermal therapy and surgery.

Strain driven emergence of topological non-triviality in YPdBi thin films.

Half-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.

The Evolution of Electron Dispersion in the Series of Rare-Earth Tritelluride Compounds Obtained from Their Charge-Density-Wave Properties and Susceptibility Calculations.

We calculated the electron susceptibility of rare-earth tritelluride compounds RTe3 as a function of temperature, wave vector, and electron-dispersion parameters. Comparison of the results obtained with the available experimental data on the transition temperature and on the wave vector of a charge-density wave in these compounds allowed us to predict the values and evolution of electron-dispersion parameters with the variation of the atomic number of rare-earth elements (R).

Simulation of Field Assisted Sintering of Silicon Germanium Alloys.

We report a numerical study of the field assisted sintering of silicon germanium alloys by a finite element method, which takes into account contact resistances, thermal expansion and the thermoelectric effect. The distribution of electrical and thermal fields was analyzed numerically, based on the experimental data collected from spark plasma sintering (SPS) apparatus. The thermoelectric properties of Si-Ge used within the simulation were considered as the function of density and the sintering temperature. Quantitative estimation of the temperature distribution during the sintering pointed to a significant, up to 60 °C, temperature difference within the specimen volume for the case of the sintering temperature at 1150 °C.