High-Frequency Rheological and Piezo-Voltage Waveform Characterization of Inkjet-Printed Polymer-Based Dopant-Source Inks.

This work focuses on developing an understanding of the rheological properties of polymer-based dopant-source inks at the timescales relevant to inkjet printing and their corresponding roles in determining the production of defect-free droplets. Ink-specific optimization of printing processes for phosphorus and boron dopant-source inks with different compositions is demonstrated. Rheological flow curves measured by a piezo axial vibrator (PAV) were used to study the changes in complex viscosity (η*) and in the elastic (G') and viscous (G″) components of the shear modulus (G*) with respect to changes in frequency (from fmin = 1 kHz to fmax = 10 kHz) to obtain an insight into the high-frequency behaviour of inks, as well as the effects of temperature (25 °C and 45 °C) and the natural aging time of the inks. Inks demonstrating complex viscosity η*min ≥ 2 mPas to η*max ≤ 20 mPas and an elastic modulus G' ≤ 20 Pa, produced droplets with negligible defects. Of the three rheological parameters (η*, G' and G″), the elastic component (G') of the shear modulus was observed to have the greatest significance in determining the stability and homogeneity of ink droplets, thus dictating the quality of the printed structures. The reliability and stability of droplet formation were further investigated through voltage waveform simulation using an oscilloscope.

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 µm; intrinsic layer width = 53 µm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

50-nm Nano-Scaled Vertical-Transistor with NiSi2 Seed-Induced Vertically Crystallized Poly-Silicon Channel for Very-Large-Scale-Integration.

Vertical-channel MOSFETs are hard to demonstrate a high electrical performance than the planar MOSFETs because of its polycrystalline-silicon (poly-Si) channel for 3-D CMOS ICs. In this paper, we have demonstrated a vertical poly-silicon-channel (VPSC) transistor NiSi2 seed-induced vertical crystallization (SIVC) and compared with the typical SG-VPC MOSFETs with solid-phase crystallization (SPC). The SIVC poly-Si showed large longitudinal grains with low defect trap sites, while the SPC poly-Si showed small spherical grains with large defect trap sites. Therefore, the electrical performance of SG-VPC MOSFETs with SIVC was superior to the SG-VPC MOSFETs with SPC in all aspects.

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor.

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-µm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.