Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers.

Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area ß-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled ß-Ga2O3 direct-epitaxy on the EG. The ß-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

Carrier Depletion near the Grain Boundary of a SiC Bicrystal.

Silicon carbide (SiC) bicrystals were prepared by diffusion bonding, and their grain boundary was observed using scanning transmission electron microscopy. The n-type electrical conductivity of a SiC single crystal was confirmed by scanning nonlinear dielectric microscopy (SNDM). Dopant profiling of the sample by SNDM showed that the interface acted as an electrical insulator with a ~2-µm-thick carrier depletion layer. The carrier depletion layer contained a higher number of oxygen impurities than the bulk crystals due to the incorporation of oxygen from the native oxide film during diffusion bonding. Density functional theory calculations of the density of states as a function of the bandgap also supported these findings. The existence of a carrier depletion layer was also confirmed in a p-type polycrystalline SiC ceramic. These results suggest that the electrical conductivity of SiC ceramics was mostly affected by carrier depletion near the grain boundary rather than the grain boundary itself.

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs.

We have achieved heteroepitaxial stacking of a van der Waals ( vdW) monolayer metal, 1T'-WTe2, and a semiconductor, 2H-WSe2, in which a distinctively low contact barrier was established across a clean epitaxial vdW gap. Our epitaxial 1T'-WTe2 films were identified as a semimetal by low temperature transport and showed the robust breakdown current density of 5.0 × 107 A/cm2. In comparison with a series of planar metal contacts, our epitaxial vdW contact was identified to possess intrinsic Schottky barrier heights below 100 meV for both electron and hole injections, contributing to superior ambipolar field-effect transistor (FET) characteristics, i.e., higher FET mobilities and higher on-off current ratios at smaller threshold gate voltages. We discuss our observations around the critical roles of the epitaxial vdW heterointerfaces, such as incommensurate stacking sequences and absence of extrinsic interfacial defects that are inaccessible by other contact methods.

Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy.

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T') and semiconducting (2H) MoTe2 crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of ∼25 meV. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas.

Suppressed weak antilocalization in the topological insulator Bi2Se3 proximity coupled to antiferromagnetic NiO.

Time-reversal symmetry (TRS) breaking of the topological insulators (TIs) is a prerequisite to observe the quantum anomalous Hall effect (QAHE) and topological magnetoelectric effect (TME). Although antiferromagnetism as well as ferromagnetism could break the TRS and generate massive Dirac surface states in the TIs, no attention has been paid to the antiferromagnet-TI heterostructures. Herein, we report the magnetotransport measurements of Bi2Se3 proximately coupled to antiferromagnetic NiO. Thin films of Bi2Se3 were successfully grown on the NiO (001) single crystalline substrates by molecular beam epitaxy. Unexpectedly, we observed a strong suppression of the weak antilocalization effect, which is similar to the case of TIs coupled to the ferromagnetic materials. For the 5 nm-thick Bi2Se3 sample on NiO, we even observed a crossover to weak localization at 2 K. These behaviors are attributed to the strong magnetic exchange field from the Ni 3d electrons. Our results show the effectiveness of the antiferromagnetic materials in breaking the TRS of TIs by the proximity effect and their possible applications for QAHE and TME observations.

Experimental demonstration of highway I2V using visible light communications.

A visible light communication (VLC)-based intelligent transportation system (ITS) has drawn much interest from telematics and automobile industries due to its enhanced safety and cost effectiveness. Within the framework of ITS, vehicle-to-vehicle and infrastructure-to-vehicle (I2V) communications have largely been considered. I2V can be viewed as an important ITS technology that broadcasts traffic information from fixed traffic infrastructure. In this paper, an experimental demonstration of a highway VLC-based I2V system is presented. For robust and reliable detection in the VLC-based I2V, the receiver structure of the proposed system is comprised of an optical filter, a color filter, and a Fresnel lens. We consider two primary atmospheric conditions in the highway I2V, i.e., sunlight and cloud effects. To alleviate these adverse effects, we propose an efficient and robust zone detection (ZD) and adaptive decision threshold (ADT) method. The sunlight effect is reduced predominantly by the ZD, while the cloud effect is lessened significantly by the ADT. The experimental results demonstrate that the proposed method performs well to counter the sunlight and cloud effects. It is found that the proposed ZD and ADT method provides an approximate SNR improvement ranging from 16 to 26 dB, depending upon measurement times of the day.

Experimental evidence of hepatitis A virus infection in pigs.

Hepatitis A virus (HAV) is the leading cause of acute viral hepatitis worldwide, with HAV infection being restricted to humans and nonhuman primates. In this study, HAV infection status was serologically determined in domestic pigs and experimental infections of HAV were attempted to verify HAV infectivity in pigs. Antibodies specific to HAV or HAV-like agents were detected in 3.5% of serum samples collected from pigs in swine farms. When the pigs were infected intravenously with 2 × 10(5) 50% tissue culture infectious dose (TCID50 ) of HAV, shedding of the virus in feces, viremia, and seroconversion were detected. In pigs orally infected with the same quantity of HAV, viral shedding was detected only in feces. HAV genomic RNA was detected in the liver and bile of intravenously infected pigs, but only in the bile of orally infected pigs. In further experiments, pigs were intravenously infected with 6 × 10(5) TCID50 of HAV. Shedding of HAV in feces, along with viremia and seroconversion, were confirmed in infected pigs but not in sentinel pigs. HAV genomic RNA was detected in the liver, bile, spleen, lymph node, and kidney of the infected pigs. HAV antigenomic RNA was detected in the spleen of one HAV-infected pig, suggesting HAV replication in splenic cells. Infiltration of inflammatory cells was observed in the livers of infected pigs but not in controls. This is the first experimental evidence to demonstrate that human HAV strains can infect pigs.