A polymer library enables the rapid identification of a highly scalable and efficient donor material for organic solar cells.

The dramatic improvement of the PCE (power conversion efficiency) of organic photovoltaic devices in the past few years has been driven by the development of new polymer donor materials and non-fullerene acceptors (NFAs). In the design of such materials synthetic scalability is often not considered, and hence complicated synthetic protocols are typical for high-performing materials. Here we report an approach to readily introduce a variety of solubilizing groups into a benzo[c][1,2,5]thiadiazole acceptor comonomer. This allowed for the ready preparation of a library of eleven donor polymers of varying side chains and comonomers, which facilitated a rapid screening of properties and photovoltaic device performance. Donor FO6-T emerged as the optimal material, exhibiting good solubility in chlorinated and non-chlorinated solvents and achieving 15.4% PCE with L8BO as the acceptor (15.2% with Y6) and good device stability. FO6-T was readily prepared on the gram scale, and synthetic complexity (SC) analysis highlighted FO6-T as an attractive donor polymer for potential large scale applications.

Influence of Acid-Doped Poly(ethylene imine) Interlayers on the Performance of Polymer:Nonfullerene Solar Cells.

This work reports that ultrathin polymeric films doped with organic acid molecules can act as an electron-transporting interfacial layer in polymer:nonfullerene solar cells. The polymeric interfacial layers, which consist of poly(ethylene imine) (PEI) doped with 3-hydroxypropane-1-sulfonic acid (HPSA) at various HPSA molar ratios, are introduced between transparent indium-tin oxide (ITO) electrodes and polymer:nonfullerene bulk heterojunction layers. The HPSA-doped PEI (PEI:HPSA) films are optically translucent in the wavelength range of ≈300-800 nm, while the acidity of PEI solutions reached ≈pH = 7 at HPSA = 30 mol%. The power conversion efficiency of solar cells is improved by doping 20 mol% HPSA due to the increased short circuit current density without open circuit voltage reduction. The improvement in solar cell performances is attributed to an adequate control of HPSA doping ratios, which spares undoped amine units of PEI for making sufficient net dipole layers with ITO surfaces and makes permanent charges for high electrical conductivity in the layers. The surface morphology and doped states are characterized with atomic force microscopy and X-ray photoelectron spectroscopy.

Water-Soluble Reactive Polymer Blends for Stable Memory Layers in Low-Voltage Nonvolatile Organic Memory Transistors with High Mobility and Data-Retention Characteristics.

Here low-voltage nonvolatile organic memory transistors, featuring high charge-carrier mobility and outstanding data-retention characteristics, by employing water-soluble reactive polymer blends as a gate-insulating memory layer are demonstrated. Blend films of poly(vinyl alcohol) (PVA) and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) (PVA:PAMPSA) are prepared from their aqueous solutions with various molar ratios of PAMPSA (0-18 mol%) and thermally annealed at 70 and 110 °C. Organic field-effect transistors (OFETs) are fabricated by depositing poly(3-hexylthiophene) (P3HT) channel layers on the thermally treated PVA:PAMPSA films. Results show that the hole mobility of OFETs is remarkably increased (≈294 times at 70 °C and ≈42 times at 110 °C) by adding only 2 mol% PAMPSA to the PVA films and further improved at 10 mol% PAMPSA (>11.7 cm2  V-1 s-1 at 70 °C and >3.8 cm2  V-1  s-1 at 110 °C). The hysteresis characteristics are rather strengthened for the PVA:PAMPSA layers by annealing at 110 °C due to the formation of cross-linking sites, even though the OFETs with the pristine PVA layers do almost lose hysteresis characteristics at 110 °C. The optimized OFETs with the PVA:PAMPSA layers (10 mol%, 110 °C) deliver excellent data retention characteristics during >10 000 memory cycles at a voltage range of -5 to +5 V.

Performance and Stability of Polymer:Nonfullerene Solar Cells with 100 °C-Annealed Electron-Collecting Combination Layers.

Invited for this month's cover is the group of Youngkyoo Kim at the Kyungpook National University. The image shows the improved electron transfer by hybrid combination layers featuring peculiar morphology for better efficiency and stability in polymer solar cells. The Full Paper itself is available at 10.1002/cssc.202100841.

Preface to the Special Issue of ChemSusChem on Advanced Organic Solar Cells.

Organic solar cells have garnered much interest as an Earth-abundant and low-energy-production renewable energy source. In their Editorial to the Special Issue on Advanced Organic Solar Cells, Guest Editors Christoph Brabec, Martin Heeney, Youngkyoo Kim, and Christine Luscombe introduce this exciting field and discuss some of the Special Issue's contents.

Performance and Stability of Polymer : Nonfullerene Solar Cells with 100 °C-Annealed Electron-Collecting Combination Layers.

Inverted-type organic solar cells, fabricated with low-temperature-processed combination layers of hybrid electron-collecting buffer layers (ECBLs) consisting of zinc oxide (ZnO) and poly(2-ethyl-2-oxazoline) (PEOz) and additional PEOz interlayers, showed improved performance and stability. The ZnO : PEOz precursor films with various PEOz compositions (0-12 wt %) were prepared and thermally treated at 100 °C, leading to the ECBLs on which the PEOz interlayers were subsequently deposited before coating of polymer : nonfullerene bulk heterojunction layers. Results showed that the power conversion efficiency of solar cells reached approximately 9.38 and 10.11 % (average) in case of the ZnO/PEOz and ZnO : PEOz(6 wt % PEOz)/PEOz combination layers, respectively, despite the low-temperature thermal annealing process. A continuous irradiation test for 12 h under one sun condition (air mass 1.5G, 100 mW cm-2 ) disclosed that the devices with the ZnO : PEOz(6 wt % PEOz)/PEOz combination layers were more stable than those with the ZnO/PEOz layers.

Persistent electrical energy generation from organic diodes under constant pressure: toward organic gravity nanogenerators.

Here it is demonstrated that electricity can be continuously generated by pressing organic diodes with the poly(3-hexylthiophene) (P3HT) layers which are sandwiched between indium-tin oxide and aluminum (Al) electrodes. The optimized single devices with the 150-nm-thick P3HT layers are able to generate 60 µV and 45 µA by pressing, while persistent voltage (50 µV) and current (45 µA) generations are achieved by continuous pressing for 7 days. The charge generation by pressing of organic diodes is supported by the current density-voltage and capacitance measurements, while the friction of pi-orbital electrons in the P3HT chains upon pressing is proposed for the mechanism of persistent electricity generation. Organic diode modules with 14 sub-cells in series deliver ca. 0.4 V and ca. 20 µW. The present technology is expected to pave the way for next-generation energy conversion devices, organic gravity nanogenerators that enable continuous electricity generation by gravitational forces.

Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C60 :C70 Co-Crystals Induced by Poly(2-ethyl-2-oxazoline) Nanodots.

Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C60 -Ih )[5,6]fullerene (C60 ) and (C70 -D5h(6) )[5,6]fullerene (C70 ) blend films, with an increase from 0.1 to 2.1 cm2 V-1 s-1 . The high relative mobility and eighteen-fold improvement are attributed not only to the anticipated reduction in S/D electrode work function but also to the beneficial effects of PEOz on the formation of a face-centered-cubic C60 :C70 co-crystal structure within the blend films.

Short-Wave Infrared-Sensing Organic Phototransistors with a Triarylamine-Based Polymer Doped with a Lewis Acid-Type Small Molecule.

Here, we report that a triarylamine-based polymer, poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (PolyTPD), is effectively doped with tris(pentafluorophenyl)borane (BCF) and the doping level is dependent on the molar ratio of BCF to PolyTPD (repeating unit). The doping reaction is performed at 25 °C at the solution states using chlorobenzene solvent by varying the BCF molar ratio up to 2.0. The resulting PolyTPD:BCF films show new broad optical absorption peaks at a wavelength of λ = 1000-3300 nm, covering the full range of short-wave infrared (SWIR, λ = 1400-3000 nm), which is stronger at a higher BCF molar ratio. Spectroscopic characterizations confirm the generation of radicals (single electrons) in PolyTPD by BCF doping, which resulted in a gradual shift of the highest occupied molecular orbital (HOMO) energy level with the BCF molar ratio. The PolyTPD:BCF films are applied as a gate-sensing layer (GSL) in the geometry of organic field-effect transistors (OFETs), leading to SWIR-sensing organic phototransistors (OPTRs). The optimized SWIR-OPTRs with the PolyTPD:BCF GSLs (BCF molar ratio = 0.5) can detect SWIR light with maximum photoresponsivities of 583.4 mA/W (λ = 1500 nm), 695.4 mA/W (λ = 2000 nm), and 829.4 mA/W (λ = 2500 nm).

Near-Infrared Organic Phototransistors with Polymeric Channel/Dielectric/Sensing Triple Layers.

A new type of near-infrared (NIR)-sensing organic phototransistor (OPTR) was designed and fabricated by employing a channel/dielectric/sensing (CDS) triple layer structure. The CDS structures were prepared by inserting poly(methyl methacrylate) (PMMA) dielectric layers (DLs) between poly(3-hexylthiophene) (P3HT) channel layers and poly[{2,5-bis-(2-octyldodecyl)-3,6-bis-(thien-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-diyl}-co-{2,2'-(2,1,3-benzothiadiazole)-5,5'-diyl}] (PODTPPD-BT) top sensing layers. Two different thicknesses of PMMA DLs (20 nm and 50 nm) were applied to understand the effect of DL thickness on the sensing performance of devices. Results showed that the NIR-OPTRs with the CDS structures were operated in a typical n-channel mode with a hole mobility of ca. 0.7~3.2 × 10-4 cm2/Vs in the dark and delivered gradually increased photocurrents upon illumination with an NIR light (905 nm). As the NIR light intensity increased, the threshold voltage was noticeably shifted, and the resulting transfer curves showed a saturation tendency in terms of curve shape. The operation of the NIR-OPTRs with the CDS structures was explained by the sensing mechanism that the excitons generated in the PODTPPD-BT top sensing layers could induce charges (holes) in the P3HT channel layers via the PMMA DLs. The optically modulated and reflected NIR light could be successfully detected by the present NIR-OPTRs with the CDS structures.

Low-Voltage Organic Nonvolatile Memory Transistors with Water-Soluble Polymers Containing Thermally Induced Radical Dipoles.

A water-soluble acidic polymer, poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA), was applied as a gate-insulating layer for organic field-effect transistors (OFETs). Before depositing the poly(3-hexylthiophene) (P3HT) channel layers, the PAMPSA layers were subjected to thermal treatment at various temperatures from 140 to 230 °C. The OFET performance was greatly enhanced by thermal treatment between 140 and 170 °C, whereas it became very poor at higher temperatures (200-230 °C). In particular, the transfer curves showed pronounced hysteresis phenomena at 170 °C. Various measurements including thermogravimetric analysis and X-ray photoelectron spectroscopy disclosed that the PAMPSA chains underwent thermal degradation from ca. 160 °C and could generate carbon radicals leading to the formation of dipoles with the nitrogen lone pair electrons. The carbon-nitrogen dipoles delivered hysteresis phenomena to the OFETs with the PAMPSA layers treated at 170 °C, which exhibited excellent memory retention characteristics up to 10 000 cycles even at -1 V. Hence, it is expected that the thermally treated PAMPSA layers can be used as one of the viable gate-insulating memory materials for low-voltage transistor-type organic memory devices (TOMDs).

Multistacked Detectors with Transparency-Controlled Polymer:Nonfullerene Bulk Heterojunction Sensing Layers for Visible Light Communications.

Here, we report multistacked organic photodiodes (OPDs) for potential light-fidelity (Li-Fi) detectors in visible light communications. The multistacked detectors were fabricated by integrating semitransparent inverted-type OPDs with polymer:nonfullerene bulk heterojunction (BHJ) layers. The thickness of BHJ sensing layers in the inverted-type OPDs was controlled to 30, 60, and 100 nm for top, middle, and bottom cells in the multistacked detectors, respectively, while 30 nm thick metal (silver) electrodes were used for securing both electrical conductivity and optical transparency. Results showed that each OPD cell in the multistacked detectors could deliver exact current signals upon illumination with a modulated white light from inorganic light-emitting diode lamp. The current signal from each OPD cell was linearly decreased as the modulation frequency of white light increased, supporting a stable operation of the multistacked detectors. Finally, the present multistacked detectors were able to exactly detect the programmed Li-Fi signals with a particular digitized information.

Enhanced superoxide sensitivity in organic field-effect transistor sensors by introducing nanoclay-polyphenol-polymer hybrid sensing channels.

Here we report that nanoclay-polyphenol-polymer hybrid sensing channels can greatly enhance the sensitivity for hazardous reactive oxygen species (ROS) in organic field-effect transistor (OFET) sensors. The hybrid layers were prepared by introducing nanoclay into the binary mixtures of poly(3-hexylthiophene) (P3HT) and rutin (a polyphenol) at various weight ratios. The presence of nanoclay improved the P3HT crystallinity in the hybrid films, which contributed to the increased drain current and well-maintained hole mobility even at the reduced amount of charge-transporting P3HT part. At the best composition (P3HT:rutin:nanocaly = 10:1:2 by weight), the OFETs with the hybrid layers were able to sense even 1 nM superoxide (a ROS) and exhibited pronouncedly enhanced sensitivity compared to those without nanoclay. The morphology investigation disclosed that rutin-nanoclay complexes formed in the hybrid films might be responsible for the enhanced sensitivity, because they let more rutin molecules protrude on the surface of channel layers for reactions with superoxide.

Nanoscale Film Morphology and n-Type Digital Memory Characteristics of π-Conjugated Donor-Acceptor Alternating Copolymer Based on Thiophene and Thiadiazole Units.

Various molecular weight π-conjugated donor-acceptor polymers based on thiadiazole and thiophene units are investigated with respect to nanoscale film morphology and digital memory performance. Interestingly, all polymers reveal excellent n-type digital permanent memory characteristics, which are governed by the combination of Ohmic and trap-limited space charge limited conductions via a hopping process using thiadiazole and thiophene units as charge traps and stepping stones. The digital memory performance is significantly influenced by the film morphology details that vary with the polymer molecular weight as well as the film thickness. A higher population of face-on structure formation, as well as higher molecular weight, provides a wider film thickness window of digital memory operation. Overall, π-conjugated PBTDzTV polymers are suitable for the production of high-performance, programmable n-type permanent memory devices with very low power consumption.

Nano-crater morphology in hybrid electron-collecting buffer layers for high efficiency polymer:nonfullerene solar cells with enhanced stability.

Organic solar cells based on solution processes have strong advantages over conventional silicon solar cells due to the possible low-cost manufacturing of flexible large-area solar modules at low temperatures. However, the benefit of the low temperature process is diminished by a thermal annealing step at high temperatures (≥200 °C), which cannot be practically applied for typical plastic film substrates with a glass transition temperature lower than 200 °C, for inorganic charge-collecting buffer layers such as zinc oxide (ZnO) in high efficiency inverted-type organic solar cells. Here we demonstrate that novel hybrid electron-collecting buffer layers with a particular nano-crater morphology, which are prepared by a low-temperature (150 °C) thermal annealing process of ZnO precursor films containing poly(2-ethyl-2-oxazoline) (PEOz), can deliver a high efficiency (12.35%) similar to the pristine ZnO layers prepared by the conventional high-temperature process (200 °C) for inverted-type polymer:nonfullerene solar cells. The nano-crater morphology was found to greatly enhance the stability of solar cells due to improved adhesion between the active layers and ZnO:PEOz hybrid buffer layers.

High-Efficiency Polymer:Nonfullerene Solar Cells with Quaterthiophene-Containing Polyimide Interlayers.

Interfacial layers (interlayers) are one of the emerging approaches in organic solar cells with bulk heterojunction (BHJ) layers because the solar cell efficiency can be additionally improved by their presence. However, less attention is paid to the use of interlayers for polymer:nonfullerene solar cells, which have strong advantages over polymer:fullerene solar cells. In addition, most polymers used for the interlayers possess a low glass transition temperature (Tg). Here, it is demonstrated that two types of quarterthiophene-containing polyimides (PIs) with high Tg (>198 °C), which are synthesized using pyromellitic dianhydride (PMDA) and cyclobutane-1,2,3,4-tetracarboxylic dianhydride (CTCDA), can act as an interfacial layer in the polymer:nonfullerene solar cells with the BHJ layers of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(2-methylene(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene) (ITIC), or (3-(1,1-dicyanomethylene)-1-methyl-indanone)-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']-dithiophene) (IT-M). Interestingly, the efficiency and stability of devices are improved by the PMDA-based PI interlayers with a stretched chain structure but degraded by the CTCDA-based PI interlayers with a bended chain structure.

Ultrasensitive detection of hazardous reactive oxygen species using flexible organic transistors with polyphenol-embedded conjugated polymer sensing layers.

Here we report that superoxide, one of the hazardous reactive oxygen species (ROS), can be quickly detected by flexible organic field-effect transistors (OFETs) with the polyphenol-embedded conjugated polymer micro-channels. Rutin, one of the abundant polyphenols found in a variety of plants, was employed as a sensing molecule and embedded in the poly(3-hexylthiophene) (P3HT) matrix. The rutin-embedded P3HT layers showed randomly distributed micro-domains, which became bigger as the rutin content increased. The best transistor performance was achieved at the rutin content of 10 wt%, while the OFETs exhibited proper and controllable transistor performances even in the phosphate buffer solutions. The sensing test revealed that the present OFET sensors could stably detect superoxide using very small amount (<10 µl) of samples at extremely low concentrations (500 pM), while they exhibited outstanding stability and durability upon repeated detection and storage-reuse tests. Finally, the present flexible OFET sensors could deliver confident sensing results for the detection of superoxide generated from the mouse RAW264.7 macrophages.

Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors.

Three triple bond-conjugated naphthalene diimide (NDI) copolymers, poly{[ N, N'-bis(2-R1)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-[(2,5-bis(2-R2)-1,4-phenylene)bis(ethyn-2,1-diyl)]} (PNDIR1-R2), were synthesized via Sonogashira coupling polymerization with varying alkyl side chains at the nitrogen atoms of the imide ring and 2,5-positions of the 1,4-diethynylbenzene moiety. Considering their identical polymer backbone structures, the side chains were found to have a strong influence on the surface morphology/nanostructure, thus playing a critical role in charge-transporting properties of the three NDI-based copolymers. Among the polymers, the one with an octyldodecyl (OD) chain at the nitrogen atoms of imide ring and a hexadecyloxy (HO) chain at the 2,5-positions of 1,4-diethynylbenzene, P(NDIOD-HO), exhibited the highest electron mobility of 0.016 cm2 V-1 s-1, as compared to NDI-based copolymers with an ethylhexyl chain at the 2,5-positions of 1,4-diethynylbenzene. The enhanced charge mobility in the P(NDIOD-HO) layers is attributed to the well-aligned nano-fiber-like surface morphology and highly ordered packing structure with a dominant edge-on orientation, thus enabling efficient in-plane charge transport. Our results on the molecular structure-charge transport property relationship in these materials may provide an insight into novel design of n-type conjugated polymers for applications in the organic electronics of the future.

Ultrasensitive Multi-Functional Flexible Sensors Based on Organic Field-Effect Transistors with Polymer-Dispersed Liquid Crystal Sensing Layers.

Ultrasensitive flexible sensors with multi-sensing functions are required for various applications in flexible electronics era. Here we demonstrate flexible polymer-dispersed liquid crystal (PDLC)-integrated-organic field-effect transistors (OFETs) (PDLC-i-OFETs), which sensitively respond to various stimulations including weak gas (air) flow, direct physical touch, light, and heat. The flexible PDLC-i-OFETs were fabricated by spin-coating the poly(methyl methacrylate) (PMMA)-dispersed 4,4'-pentyl-cyanobiphenyl (5CB) layers on the poly(3-hexylthiophene) (P3HT) channel layers of OFETs with 200 µm-thick poly(ethylene naphthalate) (PEN) substrates. The flexible PDLC-i-OFET devices could sense very weak nitrogen gas flow (0.3 sccm), which cannot be felt by human skins, and stably responded to direct physical touches (0.6~4.8 g load). In addition, the present devices showed very sensitive photoresponses to a visible light and exhibited excellent heat-sensing characteristics at a temperature of 25~70 °C. In particular, the present flexible PDLC-i-OFET devices could sense two different stimulations at the same time, indicative of promising multi-sensing capabilities.

Efficient Deep Red Light-Sensing All-Polymer Phototransistors with p-type/n-type Conjugated Polymer Bulk Heterojunction Layers.

Here we demonstrate deep red light-sensing all-polymer phototransistors with bulk heterojunction layers of poly[4,8-bis[(2-ethylhexyl)-oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]-thiophenediyl] (PTB7) and poly[[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)). The device performances were investigated by varying the incident light intensity of the deep red light (675 nm), while the signal amplification capability was examined by changing the gate and drain voltages. The result showed that the present all-polymer phototransistors exhibited higher photoresponsivity (∼14 A/W) and better on/off photoswitching characteristics than the devices with the pristine polymers under illumination with the deep red light. The enhanced phototransistor performances were attributed to the well-aligned nanofiber-like morphology and nanocrystalline P(NDI2OD-T2) domains in the blend films, which are beneficial for charge separation and charge transport in the in-plane direction.