Electrochemical detection of arsenic (III) hazardous chemicals using cubic CsPbBr3 single crystals: Structural insights from DFT study.

Long-term exposure to the highly toxic heavy metal arsenic can harm ecological systems and pose serious health risks to humans. Arsenic pollutant in water and the food chain must be addressed, and active prompt detection of As(III) is essential. The development of an effective detection method for As(III) ions is urgently needed to slow the alarming growth of arsenic pollution in the environment and safeguard the well-being of future generations. This study presents the results of our exhaustive investigation into cubic CsPbBr3 single crystals, the glassy carbon (GC) electrode modification with CsPbBr3 single crystals prepared by direct solvent evaporation, as well as our observations of the material's remarkable electrocatalytic properties and exceptional anti-interference sensing of As(III) ions in neutral pH media. The developed CsPbBr3/GC is exceptionally useful for the ultra-sensitive and specific identification of arsenic in water, exhibiting a detection limit of 0.381 µmol/L, a rapid response across a defined range of 0.1-25 µmol/L, and an ultra-sensitivity of 0.296 µA/µmolL-1. CsPbBr3/GCE (prepared without a specific reagent) is superior to other modified electrodes used as sensors in electrocatalytic activity, detection limit, analytical sensitivity, and stability response.

Modulating the Combinatorial Target Power of MgSnN2 via RF Magnetron Sputtering for Enhanced Optoelectronic Performance: Mechanistic Insights from DFT Studies.

The unique structural features of many ternary nitride materials with strong chemical bonding and band gaps above 2.0 eV are limited and are experimentally unexplored. It is important to identify candidate materials for optoelectronic devices, particularly for light-emitting diodes (LEDs) and absorbers in tandem photovoltaics. Here, we fabricated MgSnN2 thin films, as promising II-IV-N2 semiconductors, on stainless-steel, glass, and silicon substrates via combinatorial radio-frequency magnetron sputtering. The structural defects of the MgSnN2 films were studied as a function of the Sn power density, while the Mg and Sn atomic ratios remained constant. Polycrystalline orthorhombic MgSnN2 was grown on the (120) orientation within a wide optical band gap range of ∼2.20-2.17 eV. The carrier densities of 2.18× 1020 to 1.02 × 1021 cm-3, mobilities between 3.75 and 2.24 cm2/Vs, and a decrease in resistivity from 7.64 to 2.73 × 10-3 Ω cm were confirmed by Hall-effect measurements. These high carrier concentrations suggested that the optical band gap measurements were affected by a Burstein-Moss shift. Furthermore, the electrochemical capacitance properties of the optimal MgSnN2 film exhibited an areal capacitance of 152.5 mF/cm2 at 10 mV/s with high retention stability. The experimental and theoretical results showed that MgSnN2 films were effective semiconductor nitrides toward the progression of solar absorbers and LEDs.