Correlation of Local Structure and Diffusion Pathways in the Modulated Anisotropic Oxide Ion Conductor CeNbO(4.25).

CeNbO4.25 is reported to exhibit fast oxygen ion diffusion at moderate temperatures, making this the prototype of a new class of ion conductor with applications in a range of energy generation and storage devices. To date, the mechanism by which this ion transport is achieved has remained obscure, in part due to the long-range commensurately modulated structural motif. Here we show that CeNbO4.25 forms with a unit cell ∼12 times larger than the stoichiometric tetragonal parent phase of CeNbO4 as a result of the helical ordering of Ce(3+) and Ce(4+) ions along z. Interstitial oxygen ion incorporation leads to a cooperative displacement of the surrounding oxygen species, creating interlayer "NbO6" connectivity by extending the oxygen coordination number to 7 and 8. Molecular dynamic simulations suggest that fast ion migration occurs predominantly within the xz plane. It is concluded that the oxide ion diffuses anisotropically, with the major migration mechanism being intralayer; however, when obstructed, oxygen can readily move to an adjacent layer along y via alternate lower energy barrier pathways.

Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy.

To address the question of surface oxidation in organic electronics the chemical composition at the surface of single crystalline rubrene is spatially profiled and analyzed using Time of Flight - Secondary Ion Mass Spectroscopy (ToF-SIMS). It is seen that a uniform oxide (C42H28O) covers the surface while there is an increased concentration of peroxide (C42H28O2) located at crystallographic defects. By analyzing the effects of different primary ions, temperature and sputtering agents the technique of ToF-SIMS is developed as a valuable tool for the study of chemical composition variance both at and below the surface of organic single crystals. The primary ion beams C60(3+) and Bi3(+) are found to be most appropriate for mass spectroscopy and spatial profiling respectively. Depth profiling of the material is successfully undertaken maintaining the molecular integrity to a depth of ~5 µm using an Ar cluster ion source as the sputtering agent.