Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities.

Quasi-1D nanoribbons provide a unique route to diversifying the properties of their parent 2D nanomaterial, introducing lateral quantum confinement and an abundance of edge sites. Here, a new family of nanomaterials is opened with the creation of arsenic-phosphorus alloy nanoribbons (AsPNRs). By ionically etching the layered crystal black arsenic-phosphorus using lithium electride followed by dissolution in amidic solvents, solutions of AsPNRs are formed. The ribbons are typically few-layered, several micrometers long with widths tens of nanometers across, and both highly flexible and crystalline. The AsPNRs are highly electrically conducting above 130 K due to their small band gap (ca. 0.035 eV), paramagnetic in nature, and have high hole mobilities, as measured with the first generation of AsP devices, directly highlighting their properties and utility in electronic devices such as near-infrared detectors, quantum computing, and charge carrier layers in solar cells.

Unraveling the Steric Link to Copper Precursor Decomposition: A Multi-Faceted Study for the Printing of Flexible Electronics.

The field of printed electronics strives for lower processing temperatures to move toward flexible substrates that have vast potential: from wearable medical devices to animal tagging. Typically, ink formulations are optimized using mass screening and elimination of failures; as such, there are no comprehensive studies on the fundamental chemistry at play. Herein, findings which describe the steric link to decomposition profile: combining density functional theory, crystallography, thermal decomposition, mass spectrometry, and inkjet printing, are reported. Through the reaction of copper(II) formate with excess alkanolamines of varying steric bulk, tris-co-ordinated copper precursor ions: "[CuL3 ]," each with a formate counter-ion (1-3) are isolated and their thermal decomposition mass spectrometry profiles are collected to assess their suitability for use in inks (I1-3 ). Spin coating and inkjet printing of I1,2 provides an easily up-scalable method toward the deposition of highly conductive copper device interconnects (ρ = 4.7-5.3 × 10-7 Ω m; ≈30% bulk) onto paper and polyimide substrates and forms functioning circuits that can power light-emitting diodes. The connection among ligand bulk, coordination number, and improved decomposition profile supports fundamental understanding which will direct future design.

Tris(ß-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors.

Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200-350 °C) of a range of octahedrally coordinated tris(ß-ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)3 ], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N-substituted ß-ketoiminate ligands (R-acnacH, R=Me, Et, i Pr, Ph) with varying R-substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five-coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X-ray diffraction. [Al(MeCN(Me)CHC=OMe)3 ] has been used as a single source precursor for the deposition of Al2 O3 . Thin films were deposited via aerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.

Ethyl Zinc ß-Ketoiminates and ß-Amidoenoates: Influence of Precursor Design on the Properties of Highly Conductive Zinc Oxide Thin Films from Aerosol-Assisted Chemical Vapour Deposition.

Highly transparent (>85 %) and conductive (1.086×10-3 â€…Ω cm) zinc oxide thin films have been deposited from specifically selected precursors allowing us to establish a direct correlation between their molecular structure and the optoelectronic properties of the deposited films. Mono-ligated ethyl zinc compounds of varying steric bulk: [EtZn(OC(Me)CH(Me)N(i Pr))]2 (1), [EtZn(OC(OEt)CH(Me)N(i Pr))]2 (2) and [EtZn(OC(OEt)CH(CH3 )N(Dipp))]2 (3) were compared with the related bis-ligated zinc complexes [Zn(OC(Me)CH(Me)N(i Pr))2 ] (4), [Zn(OC(OEt)CH(Me)N(i Pr))2 ] (5) and [Zn(OC(OEt)CH(Me)N(Dipp))2 ] (6). In all cases bulkier ligands resulted in poorer electronic properties of deposited films, whilst all mono-ligated compounds were shown as superior precursors. All complexes were characterised by 1 H and 13 C{1 H} NMR and elemental analysis, with the structure of 6 determined by single crystal X-ray diffraction. Zinc oxide films were deposited from single and dual source (with methanol) reactions of these precursors, and analysed via XRD, XPS and EDX. Optoelectronic properties were investigated through UV/vis spectroscopy and Hall effect measurements, and morphology was examined via SEM. Tauc plots from UV/vis data indicated that Film A showed the lowest band gap of 3.31 eV. Varying the elemental composition of the precursors led to changes in the elemental composition of the resultant films, as well as changes in their structural and optoelectronic properties. Using this approach of precursor design, we have been able to tune single source precursors towards zinc oxide to deposit films with specific properties.

Investigations into the structure, reactivity, and AACVD of aluminium and gallium amidoenoate complexes.

Amidoenoate (AME = {ethyl-3-(R-amido)but-2-enoate}) complexes of aluminium and gallium, of the type: [AlCl2(AMER)] R = iPr (1-Al); [AlCl(AMER)2] R = iPr (2-Al), Dip (3-Al); [GaCl2(AMER)] R = iPr (1-Ga) and [GaCl(AMER)2] R = iPr (2-Ga), Dip (3-Ga), have been synthesised (iPr = isopropyl, Dip = 2,6-diisopropylphenyl). The coordination chemistry of these complexes has been studied in relation to precursor suitability. Investigations into the reactivity of the aluminium and gallium amidoenoate complexes involved reactions with hydride sources including alkali metal hydride salts, alkylsilanes, and magnesium hydride species and magnesium(I) dimers. The isolation of alkyl metal amidoenoate precursors including an aluminium hydride amidoenoate, [AlH(AMEDip)2] (4-Al) and dimethyl gallium amidoenoates [GaMe2(AMEDip)] (4-Ga), [GaMe2(AMEiPr)] (5-Ga) concluded the synthetic studies. A selection of the isolated complexes were used as precursors for aerosol assisted chemical vapour deposition (AACVD) at 500 °C. Thin films of either amorphous Al2O3 or Ga2O3 were deposited and subsequently annealed at 1000 °C to improve the materials' crystallinity. The films were characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV-vis) spectroscopy and energy dispersive X-ray analysis (EDXA).

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides.

Ethyl and amide zinc thioureides [L1ZnEt]2 (1), [L1*ZnEt]2 (2) and [L1Zn(N(SiMe3)2)]2 (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = iPrN(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc bis[bis(trimethylsilyl)amide] respectively. New routes towards heteroleptic complexes have been investigated through reactions of 1, 2 and 3 with ß-ketoiminates (HL2 = [(Me)CN(H){iPr}-CHC(Me)[double bond, length as m-dash]O]), bulky aryl substituted ß-diiminates (HL3 = [(Me)CN(H){Dipp}-CHC(Me)[double bond, length as m-dash]N{Dipp}] (Dipp = diisopropylphenyl) and HL3* = [(Me)CN(H){Dep}-CHC(Me)[double bond, length as m-dash]N{Dep}] (Dep = diethylphenyl)) and donor-functionalised alcohols (HL4 = Et2N(CH2)3OH and HL4* = Me2N(CH2)3OH) and have led to the formation of the heteroleptic complexes [L1*ZnL3*] (5), [L1ZnL4]2 (6), [L1ZnL4*]2 (7), [L1*ZnL4] (8) and [L1*ZnL4*] (9). All complexes have been characterised by 1H and 13C NMR, elemental analysis, and the X-ray structures of HL1*, 1, 2, 6 and 7 have been determined via single crystal X-ray diffraction. Variable temperature 1H, COSY and NOESY NMR experiments investigating the dynamic behaviour of 5, 6 and 7 have shown these molecules to be fluxional. On the basis of solution state fluxionality and thermogravimetric analysis (TGA), alkoxyzinc thioureides 6 and 7 were investigated as single-source precursors for the deposition of the ternary material zinc oxysulfide, Zn(O,S), a buffer layer used in thin film photovoltaic devices. The aerosol-assisted chemical vapour deposition (AACVD) reaction of 7 at 400 °C led to the deposition of the heterodichalcogenide material Zn(O,S), which was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX), with optical properties investigated using UV/vis spectroscopy, and surface morphology and film thickness examined using scanning electron microscopy (SEM).

Synthetic and Structural Studies of Ethyl Zinc ß-Amidoenoates and ß-Ketoiminates.

A set of heteroleptic ethyl zinc ß-amidoenoates (1, 2) and ß-ketoiminates (3) of the form [LZnEt]2 with varying steric bulk have been synthesised via the reaction of diethylzinc with ß-aminoenoate ligands HL1 and HL2 and ß-ketoimine HL3. These complexes have been characterised via 1H and 13C NMR, mass spectrometry and single-crystal X-ray diffraction, which unambiguously determined all three structures as dimeric species in the solid state. We observe the unusual dimerisation of 1 and 2 through coordination of the central zinc atom to the methine carbon of the second monomer, which gives these complexes high reactivity. The thermal properties of complex 3 are explored via thermal gravimetric analysis (TGA), to investigate their potential as single-source precursors to zinc oxide, which shows that 3 has a significantly lower decomposition temperature as compared to its bis-ligated counterpart [Zn(L3)2], which gives 3 promise as a single-source precursor to zinc oxide.

MODs vs. NPs: Vying for the Future of Printed Electronics.

This Minireview compares two distinct ink types, namely metal-organic decomposition (MOD) and nanoparticle (NP) formulations, for use in the printing of some of the most conductive elements: silver, copper and aluminium. Printing of highly conductive features has found purpose across a broad array of electronics and as processing times and temperatures reduce, the avenues of application expand to low-cost flexible substrates, materials for wearable devices and beyond. Printing techniques such as screen, aerosol jet and inkjet printing are scalable, solution-based processes that historically have employed NP formulations to achieve low resistivity coatings printed at high resolution. Since the turn of the century, the rise in MOD inks has vastly extended the range of potentially applicable compounds that can be printed, whilst simultaneously addressing shelf life and sintering issues. A brief introduction to the field and requirements of an ink will be presented followed by a detailed discussion of a wide array of synthetic routes to both MOD and NP inks. Unindustrialized materials will be discussed, with the challenges and outlook considered for the market leaders: silver and copper, in comparison with the emerging field of aluminium inks.

Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp')2] (dmamp' = 2-dimethylamino-2-methyl-1-propanolate).

Nickel oxide (NiO) has good optical transparency and wide band-gap, and due to the particular alignment of valence and conduction band energies with typical current collector materials has been used in solar cells as an efficient hole transport-electron blocking layer, where it is most commonly deposited via sol-gel or directly deposited as nanoparticles. An attractive alternative approach is via vapour deposition. This paper describes the chemical vapour deposition of p-type nickel oxide (NiO) thin films using the new nickel CVD precursor [Ni(dmamp')2], which unlike previous examples in literature is synthesised using the readily commercially available dialkylaminoalkoxide ligand dmamp' (2-dimethylamino-2-methyl-1-propanolate). The use of vapour deposited NiO as a blocking layer in a solar-cell device is presented, including benchmarking of performance and potential routes to improving performance to viable levels.

Molecular Complexes Featuring Unsupported Dispersion-Enhanced Aluminum-Copper and Gallium-Copper Bonds.

The reaction of the copper(I) ß-diketiminate copper complex {(Cu(BDIMes))2(µ-C6H6)} (BDIMes = N,N'-bis(2,4,6-trimethylphenyl)pentane-2,4-diiminate) with the low-valent group 13 metal ß-diketiminates M(BDIDip) (M = Al or Ga; BDIDip = N,N'-bis(2,6-diisopropylphenyl)pentane-2,4-diiminate) in toluene afforded the complexes {(BDIMes)CuAl(BDIDip)} and {(BDIMes)CuGa(BDIDip)}. These feature unsupported copper-aluminum or copper-gallium bonds with short metal-metal distances, Cu-Al = 2.3010(6) Å and Cu-Ga = 2.2916(5) Å. Density functional theory (DFT) calculations showed that approximately half of the calculated association enthalpies can be attributed to London dispersion forces.

Iron-Intercalated Zirconium Diselenide Thin Films from the Low-Pressure Chemical Vapor Deposition of [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2.

Transition metal chalcogenide thin films of the type Fe x ZrSe2 have applications in electronic devices, but their use is limited by current synthetic techniques. Here, we demonstrate the synthesis and characterization of Fe-intercalated ZrSe2 thin films on quartz substrates using the low-pressure chemical vapor deposition of the single-source precursor [Fe(η5-C5H4Se)2Zr(η5-C5H5)2]2. Powder X-ray diffraction of the film scraping and subsequent Rietveld refinement of the data showed the successful synthesis of the Fe0.14ZrSe2 phase, along with secondary phases of FeSe and ZrO2. Upon intercalation, a small optical band gap enhancement (E g(direct) opt = 1.72 eV) is detected in comparison with that of the host material.

Low-Temperature Deposition of Highly Conductive Aluminum Metal Films on Flexible Substrates Using Liquid Alane MOD Precursors.

Metal-organic decomposition (MOD) precursor inks are emerging as the new route to low-temperature deposition of highly conductive metals, owing to the tunability of their decomposition. New methods of printing are being investigated to help negate the progressive issues of the electronics industry, not least the movement toward low-cost polymers and paper substrates. Informed precursor design is crucial if achieving materials capable of this is possible. In this work, the liquid MOD precursors, dimethylethylamine alane (DMEAA) and trimethylamine alane (TEAA), have been used to deposit a highly conductive aluminum (Al) metal with resistivities in the range of 4.10 × 10-5 to 5.32 × 10-7 Ω m (mean electrical resistivity of 8 × 10-6 Ω m, approximately 300 times more resistive than bulk Al metal), without the need for an additional solvent, at low temperatures (100 and 120 °C), on a range of substrates including glass, polyimide, polyethylene terephthalate, and paper. Conductive coatings have been analyzed using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and resistivity measurements; as a proof of concept, Al deposited on paper has been used in an electrical circuit. Results indicate that DMEAA is a better precursor, producing more conductive films, which is explained by its lower decomposition temperature and higher Al weight loading, indicating potential for significant industrial application.

Structural and Dynamic Properties of Gallium Alkoxides.

A comparison of chlorido-gallium functionalized alkoxides as precursors for aerosol-assisted chemical vapor deposition (AACVD) was carried out. Variable-temperature (VT)-NMR studies were used to probe the fluxional behavior of these alkoxides in solution, and hence their utility as precursors. The synthesis involved the initial isolation of the dimer [GaCl(NMe2)2]2 via a salt metathesis route from GaCl3 and 2 equiv of LiNMe2. This dimer was then reacted with 4 equiv of HOCH2CH2CH2NEt2, resulting in the formation of Ga[µ-(OCH2CH2CH2NEt2)2GaCl2]3 (1). Mass spectrometry and VT-NMR confirmed the oligomeric structure of 1. Tuning of the ligand properties, namely, the chain length and substituents on N, resulted in formation of the monomers [GaCl(OR)2] (R = CH2CH2NEt2, (2); CH2CH2CH2NMe2, (3)). VT-NMR studies, supported by density functional theory calculations, confirmed that the ligands in both 2 and 3 possess a hemilabile coordination to the gallium center, owing to either a shorter carbon backbone (2) or less steric hindrance (3). Both 2 and 3 were selected for use as precursors for AACVD: deposition at 450 °C gave thin films of amorphous Ga2O3, which were subsequently annealed at 1000 °C to afford crystalline Ga2O3 material. The films were fully characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible spectroscopy, and energy dispersive X-ray analysis.

A rugged, self-sterilizing antimicrobial copper coating on ultra-high molecular weight polyethylene: a preliminary study on the feasibility of an antimicrobial prosthetic joint material.

We report here for the first time how the combination of a precursor solution and low temperature (170 °C) aerosol assisted chemical vapour deposition were used to bond a copper coating to ultra-high molecular weight polyethylene (UHMWPE) and promote robustness. This metallic thin film remained intact on the UHMWPE substrate after the Scotch tape test and showed notable wear-resistance after 10 cycles of sand paper-abrasion. Antimicrobial assays against both Escherichia coli and Staphylococcus aureus revealed potent dark bactericidal activity with 99.999% reduction in bacterial number within 15 minutes. These results suggest that the modified UHMWPE could be a potential candidate for antimicrobial plastics and in the long term may find application in prosthetic joint applications.

Precursors for Atmospheric Plasma-Enhanced Sintering: Low-Temperature Inkjet Printing of Conductive Copper.

Bidentate diamine and amino-alcohol ligands have been used to form solid, water-soluble, and air-stable monomeric copper complexes of the type [Cu(NH2CH2CH(R)Y)2(NO3)2] (1, R=H, Y=NH2; 2, R=H, Y=OH; 3, R=Me, Y=OH). The complexes were characterized by elemental analysis, mass spectrometry, infrared spectroscopy, thermal gravimetric analysis, and single-crystal X-ray diffraction. Irrespective of their decomposition temperature, precursors 1-3 yield highly conductive copper features [1.5×10-6â€…Ω m (±5×10-7â€…Ω m)] upon atmospheric-pressure plasma-enhanced sintering.

Macrocycles containing 1,1'-ferrocenyldiselenolato ligands on group 4 metallocenes.

Macrocyclic [Fe(η5-C5H4Se)2M(η5-C5H4R)2]2 [M = Ti (1), Zr (2), Hf (3), R = H; and M = Zr (4), Hf (5), R = tBu] were prepared and characterized by 77Se NMR spectroscopy and the crystal structures of 1-3 and 5 were determined by single-crystal X-ray diffraction. The crystal structure of 4 is known and the complex is isomorphous with 5. 1-5 form mutually similar macrocyclic tetranuclear complexes in which the alternating Fe(C5H4Se)2 and M(C5H4R)2 centers are linked by selenium bridges. The thermogravimetric analysis (TGA) of 1-3 under a helium atmosphere indicated that the complexes undergo a two-step decomposition upon heating. The final products were identified using powder X-ray diffraction as FexMSe2, indicating their potential as single-source precursors for functional materials.

Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD.

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1). Samples were heated at 1000 °C for 1-18 h and cooled to room temperature following two different protocols, which promoted the formation of different phases. The resulting films were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and UV/vis spectroscopy. An investigation of the Fe doping limit from a parallel pyrolysis study of Fe x TiSe2 powders produced in situ during LPCVD depositions has shown an increase in the Fe-TiSe2-Fe layer width with Fe at% increase. Powders were analyzed using powder X-ray diffraction (PXRD) involving Rietveld refinement and XPS. UV/vis measurements of the semiconducting thin films show a shift in band gap with iron doping from 0.1 eV (TiSe2) to 1.46 eV (Fe0.46TiSe2).

Comparison of macrocyclic and acyclic chelators for gallium-68 radiolabelling.

Gallium-68 (68Ga) is a positron-emitting isotope used for clinical PET imaging of peptide receptor expression. 68Ga radiopharmaceuticals used in molecular PET imaging consist of disease-targeting biomolecules tethered to chelators that complex 68Ga3+. Ideally, the chelator will rapidly, quantitatively and stably coordinate 68Ga3+ at room temperature, near neutral pH and low chelator concentration, allowing for simple routine radiopharmaceutical formulation. Identification of chelators that fulfil these requirements will facilitate development of kit-based 68Ga radiopharmaceuticals. Herein the reaction of a range of widely used macrocyclic and acyclic chelators with 68Ga3+ is reported. Radiochemical yields have been measured under conditions of varying chelator concentrations, pH (3.5 and 6.5) and temperature (25 and 90 °C). These chelators are: 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid (DOTA), 1,4,7-triazacyclononane-1,4,7-triacetic acid (NOTA), 1,4,7-triazacyclononane macrocycles substituted with phosphonic (NOTP) and phosphinic (TRAP) groups at the amine, bis(2-hydroxybenzyl)ethylenediaminediacetic acid (HBED), a tris(hydroxypyridinone) containing three 1,6-dimethyl-3-hydroxypyridin-4-one groups (THP) and the hexadentate tris(hydroxamate) siderophore desferrioxamine-B (DFO). Competition studies have also been undertaken to assess relative complexation efficiencies of each chelator for 68Ga3+ under different pH and temperature conditions. Performing radiolabelling reactions at pH 6.5, 25 °C and 5-50 µM chelator concentration resulted in near quantitative radiochemical yields for all chelators, except DOTA. Radiochemical yields either decreased or were not substantially improved when the reactions were undertaken at lower pH or at higher temperature, except in the case of DOTA. THP and DFO were the most effective 68Ga3+ chelators at near-neutral pH and 25 °C, rapidly providing near-quantitative radiochemical yields at very low chelator concentrations. NOTP and HBED were only slightly less effective under these conditions. In competition studies with all other chelators, THP demonstrated highest reactivity for 68Ga3+ complexation under all conditions. These data point to THP possessing ideal properties for rapid, one-step kit-based syntheses of 68Ga-biomolecules for molecular PET imaging. LC-MS and 1H, 13C{1H} and 71Ga NMR studies of HBED complexes of Ga3+ showed that under the analytical conditions employed in this study, multiple HBED-bound Ga complexes exist. X-ray diffraction data indicated that crystals isolated from these solutions contained octahedral [Ga(HBED)(H2O)], with HBED coordinated in a pentadentate N2O3 mode, with only one phenolic group coordinated to Ga3+, and the remaining coordination site occupied by a water molecule.

Synthesis of Trimeric Organozinc Compounds and their Subsequent Reaction with Oxygen.

A conventional solution-based route to a cyclic trimeric organozinc compound [{Zn(Et)(ß-diketonate)}3] (ß-diketonate=OC(OMe)CHC(Me)O, 1) is described, with 1 structurally characterized for the first time. The ligand selection of bidentate ß-diketonates is shown to be key to isolating a cyclic trimer. Additional reaction of ß-diketonates with diethyl zinc were spectroscopically characterized as compounds of the type [{Zn(Et)(ß-diketonate)} n ] (ß-diketonate=OC(Me)CHC(Me)O, 2, OC(OtBu)CHC(Me)O, 3). Further studies have shown that selective oxidation of these species produces cubanes of the general formula [{Zn(OC(R)CHC(Me)O)2Zn(Et)OEt}2] (R=OMe, 4; Me, 5; OtBu, 6), allowing a high oxygen content whilst remaining structurally suitable for use as precursors. The successful deposition of thin films of zinc oxide through aerosol-assisted chemical vapor deposition (AACVD), using a novel precursor, is described and fully characterized.

Hybrid Organic-Inorganic Coordination Complexes as Tunable Optical Response Materials.

Novel lead and bismuth dipyrido complexes have been synthesized and characterized by single-crystal X-ray diffraction, which shows their structures to be directed by highly oriented π-stacking of planar fully conjugated organic ligands. Optical band gaps are influenced by the identity of both the organic and inorganic component. Density functional theory calculations show optical excitation leads to exciton separation between inorganic and organic components. Using UV-vis, photoluminescence, and X-ray photoemission spectroscopies, we have determined the materials' frontier energy levels and show their suitability for photovoltaic device fabrication by use of electron- and hole-transport materials such as TiO2 and spiro-OMeTAD respectively. Such organic/inorganic hybrid materials promise greater electronic tunability than the inflexible methylammonium lead iodide structure through variation of both the metal and organic components.