Versatile Nanoscale Three-Terminal Memristive Switch Enabled by Gating.

A three-terminal memristor with an ultrasmall footprint of only 0.07 µm2 and critical dimensions of 70 nm × 10 nm × 6 nm is introduced. The device's feature is the presence of a gate contact, which enables two operation modes: either tuning the set voltage or directly inducing a resistance change. In I-V mode, we demonstrate that by changing the gate voltages between ±1 V one can shift the set voltage by 69%. In pulsing mode, we show that resistance change can be triggered by a gate pulse. Furthermore, we tested the device endurance under a 1 kHz operation. In an experiment with 2.6 million voltage pulses, we found two distinct resistance states. The device response to a pseudorandom bit sequence displays an open eye diagram and a success ratio of 97%. Our results suggest that this device concept is a promising candidate for a variety of applications ranging from Internet-of-Things to neuromorphic computing.

Measuring dielectric and electro-optic responses of thin films using plasmonic devices.

This paper introduces a simple method for the measurement of the relative permittivity and the Pockels coefficient of electro-optic (EO) materials in a waveguide up to sub-THz frequencies. By miniaturizing the device and making use of plasmonics, the complexities of traditional methods are mitigated. This work elaborates the fabrication tolerance and simplicity of the method, and highlights its applicability to various materials, substrates and configurations. The method is showcased using drop-casted perovskite barium titanate (BaTiO3, BTO) nano-particle thin-films and it has previously been used to measure epitaxial thin film BTO. In this work we show the effective relative permittivity of drop casted BTO to be εeff ∼ 30 at 200 MHz, dropping to ∼ 18 at 67 GHz and similarly, the effective Pockels coefficient was found to be reff ∼ 16 at 350 MHz and ∼ 8 at 70 GHz. These values are a factor > 50 below the values found for thin film BTO. Yet, the fact that the method can be applied to such different samples and Pockels strengths gives testimony to its versatility and sensitivity.

C- and O-Band Dual-Polarization Fiber-to-Chip Grating Couplers for Silicon Nitride Photonics.

Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-produced SiN PICs in a back-end-of-the-line (BEOL) process, which is compatible with 248 nm deep UV lithography. Metallic back reflectors are introduced to enhance the coupling efficiency (CE) from -1.11 to -0.44 dB in simulation and from -2.2 to -1.4 dB in experiments for the TE polarization in the C-band. Furthermore, these gratings can be optimized to couple both TE and TM polarizations with a CE below -3 dB and polarization-dependent losses under 1 dB over a wavelength range of 40 nm in the O-band. This elegant approach offers a simple solution for the realization of compact and, at the same time, highly efficient coupling schemes in SiN PICs.

Atomic scale memristive photon source.

Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms. They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing. Amongst these devices, Ag/amorphous-SiOx/Pt memristors are among the most studied systems, with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally. In this paper, we report the observation of a novel feature in these devices: The appearance of new photoluminescent centers in SiOx upon memristive switching, and photon emission correlated with the conductance changes. This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks, optical interconnects, and quantum communication.

Broadband Metallic Fiber-to-Chip Couplers and a Low-Complexity Integrated Plasmonic Platform.

We present a plasmonic platform featuring efficient, broadband metallic fiber-to-chip couplers that directly interface plasmonic slot waveguides, such as compact and high-speed electro-optic modulators. The metallic gratings exhibit an experimental fiber-to-slot coupling efficiency of -2.7 dB with -1.4 dB in simulations with the same coupling principle. Further, they offer a huge spectral window with a 3 dB passband of 350 nm. The technology relies on a vertically arranged layer stack, metal-insulator-metal waveguides, and fiber-to-slot couplers and is formed in only one lithography step with a minimum feature size of 250 nm. As an application example, we fabricate new modulator devices with an electro-optic organic material in the slot waveguide and reach 50 and 100 Gbit/s data modulation in the O- and C-bands within the same device. The devices' broad spectral bandwidth and their relaxed fabrication may render them suitable for experiments and applications in the scope of sensing, nonlinear optics, or telecommunications.

Compact Mid-Infrared Gas Sensing Enabled by an All-Metamaterial Design.

The miniaturization of mid-infrared optical gas sensors has great potential to make the "fingerprint region" between 2 and 10 µm accessible to a variety of cost-sensitive applications ranging from medical technology to atmospheric sensing. Here we demonstrate a gas sensor concept that achieves a 30-fold reduction in absorption volume compared to conventional gas sensors by using plasmonic metamaterials as on-chip optical filters. Integrating metamaterials into both the emitter and the detector cascades their individual filter functions, yielding a narrowband spectral response tailored to the absorption band of interest, here CO2. Simultaneously, the metamaterials' angle-independence is maintained, enabling an optically efficient, millimeter-scale cavity. With a CO2 sensitivity of 22.4 ± 0.5 ppm·Hz-0.5, the electrically driven prototype already performs at par with much larger commercial devices while consuming 80% less energy per measurement. The all-metamaterial sensing concept offers a path toward more compact and energy-efficient mid-infrared gas sensors without trade-offs in sensitivity or robustness.

100 GBd IM/DD transmission over 14†km SMF in the C-band enabled by a plasmonic SSB MZM.

100 Gb/s NRZ-OOK transmission over 14 km standard single mode fiber in the C-band is demonstrated with a simple intensity modulation and direct detection scheme. The transmission concept utilizes single sideband modulation and comprises a single differential digital-to-analog converter with adjustable phase offset, a new dual electrode plasmonic Mach-Zehnder modulator, a laser at 1537.5 nm, standard single mode fibers, a photodiode, an analog-to-digital converter, and linear offline digital signal processing. The presented SSB concept requires no DSP and complex signaling at the transmitter. The demonstrated SSB transmitter increased the possible transmission distance by a factor of 4.6 compared to a DSB transmitter. We also investigated the equalization requirements. A T/2-spaced feedforward equalizer requires 27 taps to achieve transmission over 10 km with a BER below the HD-FEC limit. In comparison to a DSB transmitter, the SSB transmitter reduced the receiver DSP complexity by a factor of 13.7.

Broadband, High-Temperature Stable Reflector for Aerospace Thermal Radiation Protection.

A simple and thermally stable photonic heterostructure exhibiting high average reflectivity (⟨R⟩ ≈ 88.8%) across a broad wavelength range (920-1450 nm) is presented. The design combines a thin, highly reflective and broadband metallic substrate (Ta) with an optimized dielectric coating (10 layers) to create an enhanced reflector with improved optical and thermal properties compared to its constituents. The heterostructure exhibits temperature-reversible reflective properties up to 1000 °C. In order to take advantage of the high reflectivity and temperature stable properties of this coating, in a wide range of non-photonic composite materials, we have fabricated heterostructure platelets as additives. By impregnating these additives into other types of materials, their response can be photonically enhanced.  Platelets of such a heterostructure have been introduced inside an organic matrix to increase its broadband reflection performance. The platelet-impregnated matrix displays an average reflectivity improvement from 5% to an average of 55% over a 1000 nm range, making it a suitable additive for next generation thermal protection systems (TPS).

Compact, ultra-broadband plasmonic grating couplers.

We demonstrate all-metallic grating couplers that enable vertical, compact and broadband fiber-coupling. The grating couplers are based on a metal layer and directly convert a vertical fiber mode into surface plasmon polaritons (SPPs). In combination with a focusing arrangement, the grating couplers require only a small footprint of 13.5 × 12 µm2. We characterize the grating couplers with both periodic and apodized gratings and experimentally show a 1-dB bandwidth of 115 nm with a coupling efficiency of 2.9 dB.

120 GBd plasmonic Mach-Zehnder modulator with a novel differential electrode design operated at a peak-to-peak drive voltage of 178 mV.

A new plasmonic Mach-Zehnder modulator is demonstrated at a bit rate of 120 Gb/s NRZ-OOK with low peak-to-peak driving voltages of 178 mVpp below the HD-FEC limit. Such record low driving voltage requirements potentially translate into an electrical drive power consumption of 862 aJ/bit. The low drive voltages have been made possible by a new differential Mach-Zehnder modulator electrode design. The differential electrode design is optimized for the balanced driving circuitry and reduces the effectively required driving voltage by a factor of four (Vπ/4). The potential of the transmitter scheme is further demonstrated by a transmission experiment over 500 m of single mode fiber at the C-band with a BER performance below the KP4 FEC limit.

Low-loss hybrid plasmonic coupler.

We demonstrate a low-loss coupling scheme between a silicon photonic waveguide and a hybrid-plasmonic waveguide. Measured coupling efficiencies reach up to 94% or -0.27 dB. The metal-insulator-semiconductor structure is fabrication-tolerant and adaptable to a wide range of materials including those used in CMOS processes. The coupler is a promising building block for low-loss active plasmonic devices.

Plasmonic IQ modulators with attojoule per bit electrical energy consumption.

Coherent optical communications provides the largest data transmission capacity with the highest spectral efficiency and therefore has a remarkable potential to satisfy today's ever-growing bandwidth demands. It relies on so-called in-phase/quadrature (IQ) electro-optic modulators that encode information on both the amplitude and the phase of light. Ideally, such IQ modulators should offer energy-efficient operation and a most compact footprint, which would allow high-density integration and high spatial parallelism. Here, we present compact IQ modulators with an active section occupying a footprint of 4 × 25 µm × 3 µm, fabricated on the silicon platform and operated with sub-1-V driving electronics. The devices exhibit low electrical energy consumptions of only 0.07 fJ bit-1 at 50 Gbit s-1, 0.3 fJ bit-1 at 200 Gbit s-1, and 2 fJ bit-1 at 400 Gbit s-1. Such IQ modulators may pave the way for application of IQ modulators in long-haul and short-haul communications alike.

High-speed plasmonic modulator in a single metal layer.

Plasmonics provides a possible route to overcome both the speed limitations of electronics and the critical dimensions of photonics. We present an all-plasmonic 116-gigabits per second electro-optical modulator in which all the elements-the vertical grating couplers, splitters, polarization rotators, and active section with phase shifters-are included in a single metal layer. The device can be realized on any smooth substrate surface and operates with low energy consumption. Our results show that plasmonics is indeed a viable path to an ultracompact, highest-speed, and low-cost technology that might find many applications in a wide range of fields of sensing and communications because it is compatible with and can be placed on a wide variety of materials.

Nonlinearities of organic electro-optic materials in nanoscale slots and implications for the optimum modulator design.

The performance of highly nonlinear organic electro-optic (EO) materials incorporated into nanoscale slots is examined. It is shown that EO coefficients as large as 190 pm/V can be obtained in 150 nm wide plasmonic slot waveguides but that the coefficients decrease for narrower slots. Possible mechanism that lead to such a decrease are discussed. Monte-Carlo computer simulations are performed, confirming that chromophore-surface interactions are one important factor influencing the EO coefficient in narrow plasmonic slots. These highly nonlinear materials are of particular interest for applications in optical modulators. However, in modulators the key parameters are the voltage-length product UπL and the insertion loss rather than the linear EO coefficients. We show record-low voltage-length products of 70 Vµm and 50 Vµm for slot widths in the order of 50 nm for the materials JRD1 and DLD164, respectively. This is because the nonlinear interaction is enhanced in narrow slot and thereby compensates for the reduced EO coefficient. Likewise, it is found that lowest insertion losses are observed for slot widths in the range 60 to 100 nm.