Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range.

We present experimental studies on low-temperature ([Formula: see text]) carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi ranging from 6 to 8%. The photoreflectance experiment revealed the QW bandgap evolution with [Formula: see text] % Bi, which resulted in the bandgap tunability roughly between 629 and [Formula: see text], setting up the photon emission wavelength between 1.97 and [Formula: see text]. The photoluminescence experiment showed a relatively small 3-10[Formula: see text] Stokes shift regarding the fundamental QW absorption edge, indicating the exciton localisation beneath the QW mobility edge. The localised state's distribution, being the origin of the PL, determined carrier dynamics in the QWs probed directly by the time-resolved photoluminescence and transient reflectivity. The intraband carrier relaxation time to the QW ground state, following the non-resonant excitation, occurred within 3-25[Formula: see text] and was nearly independent of the Bi content. However, the interband relaxation showed a strong time dispersion across the PL emission band and ranging nearly between 150 and [Formula: see text], indicating the carrier transfer among the localised state's distribution. Furthermore, the estimated linear dispersion variation parameter significantly decreased from [Formula: see text] to [Formula: see text] with increasing the Bi content, manifested the increasing role of the non-radiative recombination processes with Bi in the QWs.

Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS2, MoSe2, MoTe2, WS2, and WSe2 Crystals.

Following the rise of interest in the properties of transition metal dichalcogenides, many experimental techniques were employed to research them. However, the temperature dependencies of optical transitions, especially those related to band nesting, were not analyzed in detail for many of them. Here, we present successful studies utilizing the photoreflectance method, which, due to its derivative and absorption-like character, allows investigating direct optical transitions at the high-symmetry point of the Brillouin zone and band nesting. By studying the mentioned optical transitions with temperature from 20 to 300 K, we tracked changes in the electronic band structure for the common transition metal dichalcogenides (TMDs), namely, MoS2, MoSe2, MoTe2, WS2, and WSe2. Moreover, transmission and photoacoustic spectroscopies were also employed to investigate the indirect gap in these crystals. For all observed optical transitions assigned to specific k-points of the Brillouin zone, their temperature dependencies were analyzed using the Varshni relation and Bose-Einstein expression. It was shown that the temperature energy shift for the transition associated with band nesting is smaller when compared with the one at high-symmetry point, revealing reduced average electron-phonon interaction strength.

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions.

The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR) spectroscopy and theoretically within the density functional theory (DFT). In the PR spectra direct optical transitions (A and B) have been clearly observed and pressure coefficients have been determined for these transitions to be: αA = 2.0 ± 0.1 and αB = 3.6 ± 0.1 meV/kbar for MoS2, αA = 2.3 ± 0.1 and αB = 4.0 ± 0.1 meV/kbar for MoSe2, αA = 2.6 ± 0.1 and αB = 4.1 ± 0.1 meV/kbar for WS2, αA = 3.4 ± 0.1 and αB = 5.0 ± 0.5 meV/kbar for WSe2. It has been found that these coefficients are in an excellent agreement with theoretical predictions. In addition, a comparative study of different computational DFT approaches has been performed and analyzed. For indirect gap the pressure coefficient have been determined theoretically to be -7.9, -5.51, -6.11, and -3.79, meV/kbar for MoS2, MoSe2, WS2, and WSe2, respectively. The negative values of this coefficients imply a narrowing of the fundamental band gap with the increase in hydrostatic pressure and a semiconductor to metal transition for MoS2, MoSe2, WS2, and WSe2, crystals at around 140, 180, 190, and 240 kbar, respectively.