RESUMO
CdTe nanowires with the average diameter of only 40 nm coated with (Cd,Mg)Te shells are grown using Au-catalyzed vapor-liquid-solid growth mechanism in a system for molecular beam epitaxy. High optical quality of individual nanowires is revealed by means of low temperature cathodoluminescence and micro-luminescence. It is found that, the optical emission spectrum consists mostly of the near band edge emission without any significant contribution of defect related luminescence. Moreover, the importance of surface passivation with (Cd,Mg)Te coating shells is demonstrated.
RESUMO
We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.
RESUMO
The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity from ZnTe/ZnMgTe core/shell nanowires grown on Si substrates is reported. A special role of the use of Si substrates instead of GaAs substrates is emphasized, which results in an increase of the near band edge emission intensity by at least one order of magnitude accompanied by a simultaneous reduction of the defect related luminescence. A possible explanation of this effect relies on the presence of Ga-related deep level defects in structures grown on GaAs substrates, which are absent when Si substrates are used. Monochromatic mapping of the cathodoluminescence clearly confirms that the observed emission originates, indeed, from the ZnTe/ZnMgTe core/shell nanowires, whereas individual objects are studied by means of microphotoluminescence.
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We report on magnetic field-induced oscillations of the photon echo signal from negatively charged excitons in a CdTe/(Cd,Mg)Te semiconductor quantum well. The oscillatory signal is due to Larmor precession of the electron spin about a transverse magnetic field and depends sensitively on the polarization configuration of the exciting and refocusing pulses. The echo amplitude can be fully tuned from the maximum down to zero depending on the time delay between the two pulses and the magnetic-field strength. The results are explained in terms of the optical Bloch equations accounting for the spin level structure of electrons and trions.
RESUMO
Two temporally non-overlapping linearly cross-polarized 140 fs laser pulses are shown to control the spin polarization in a three-level system. Simultaneous excitation of the two excited states triggers quantum beatings originating from the interference of the wavefunctions corresponding to different spin sublevels of the states. Although the beatings are not seen in the spin densities of the excited states they are clearly observed in the magneto-optical Kerr effect. An analytical expression for the description of the beatings is obtained. Experimental results are in good agreement with theoretical predictions and demonstrate the control of beatings with attosecond resolution.
RESUMO
We report on the growth and high spatial resolution magneto-photoluminescence of CdMnTe quantum dots embedded in a ZnCdTe matrix with Mn content of about 3%. The giant Zeeman spitting of excitonic emission coming from individual quantum dots and magnetization fluctuations inside them are studied in magnetic fields up to 7 T. We have found that the description of these effects requires the inclusion of antiferromagnetic Mn-Mn interaction in the considerations. Moreover, the values of the Zeeman shift are strongly related to the size of the dot. In particular, the higher spectral position of the line is, i.e., the smaller the dot, the smaller the Zeeman splitting that is observed. This effect is quantitatively explained with model calculations made under the assumption of magnetic polaron formation in diluted magnetic quantum dots and the presence of ion-ion exchange interaction.
RESUMO
Basically different mechanisms of optical second harmonic generation (SHG) in semiconductors, induced by an external magnetic field H, have been identified experimentally by studying the diluted magnetic semiconductor (Cd,Mn)Te. For paramagnetic (Cd,Mn)Te the SHG response is governed by spin quantization of electronic states, in contrast with diamagnetic CdTe with its dominating orbital quantization. The mechanisms can be identified by the distinct magnetic field dependence of the SHG intensity which scales with the spin splitting in the paramagnetic case as compared to the H2 dependence observed for the diamagnetic case.
