Phonon-Assisted Tunneling through Quantum Dot Systems Connected to Majorana Bound States.

We theoretically analyze phonon-assisted tunneling transport in a quantum dot side connected to a Majorana bound state in a topological superconducting nanowire. We investigate the behavior of the current through the dot, for a range of experimentally relevant parameters, in the presence of one long-wave optical phonon mode. We consider the current-gate voltage, the current-bias voltage and the current-dot-Majorana coupling characteristics under the influence of the electron-phonon coupling. In the absence of electron-phonon interaction, the Majorana bound states suppress the current when the gate voltage matches the Fermi level, but the increase in the bias voltage counteracts this effect. In the presence of electron-phonon coupling, the current behaves similarly as a function of the renormalized gate voltage. As an added feature at large bias voltages, it presents a dip or a plateau, depending on the size of the dot-Majorana coupling. Lastly, we show that the currents are most sensitive to, and depend non-trivially on the parameters of the Majorana circuit element, in the regime of low temperatures combined with low voltages. Our results provide insights into the complex physics of quantum dot devices used to probe Majorana bound states.

Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.

Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.

Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions.

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.