Charge transport mechanism in the forming-free memristor based on silicon nitride.

Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, Shklovskii-Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.

Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor.

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO x , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO x -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiO x -based memristor in different states, are determined.

Possible Differential Diagnosis of the Degrees of Rheological Disturbances in Patients with Type 2 Diabetes Mellitus by Dielectrophoresis of Erythrocytes.

Hemorheological disorders in structural and functional parameters of erythrocytes are involved in the pathological process in type 2 diabetes mellitus (DM). AIM: to investigate the feasibility of differential diagnosis of the degrees of rheological disturbances in patients with type 2 DM by dielectrophoresis of erythrocytes. METHODS: 62 subjects (58.7 ± 1.6 years) with type 2 DM diagnosed according to the criteria of the ADA were subdivided into two groups: medium (n = 47) and high (n = 15) risk of microcirculatory disturbances (EASD, 2013). Electric and viscoelastic parameters of erythrocytes were determined by dielectrophoresis using an electric optical system of cell detection. RESULTS: the progression of rheological disturbances in the patients with type 2 DM was accompanied by significant decreases in deformation amplitude; dipole moment; polarizability; and membrane capacity; and increases in conductivity, viscosity, rigidity, hemolysis, and formation of aggregates (p < 0.05). Combined use of the parameters increased sensitivity (97.8%) and specificity (86.7%) for diagnosis of rheological disturbances in type 2 DM. CONCLUSION: the proposed experimental approach possesses low invasiveness, high productivity, shorter duration, vividness of the results. The method allows to evaluate not only local (renal and ocular) but also systemic status of microcirculation using more than 20 parameters of erythrocytes.

Nanoscale potential fluctuations in nonstoichiometrics tantalum oxide.

The atomic and electronic structure of nonstoichiometric amorphous tantalum oxide (TaO x ) films of different composition has been investigated by means of electron microscopy, x-ray photoelectron spectroscopy, Raman and infrared spectroscopy. The dispersion of the absorption coefficient and refraction index has been studied by spectral ellipsometry. The optical spectra were interpreted using the results of a quantum-chemical simulation for crystalline orthorhombic TaO x . It was found that the presence of oxygen vacancies in the oxygen-deficient TaO x film show an optical absorption peak at 4.6 eV. It has been established that TaO x consists of stoichiometric Ta2O5, metallic Ta clusters less than 20 nm in size, and tantalum suboxides TaO y (y < 2.5). The model of nanoscale potential fluctuations of TaO x bandgap in the range of 0-4.2 eV is proposed and justified. The design of the flash memory element based on the effect of localization of electrons and holes in Ta metallic nanoclusters in the TaO x matrix is proposed.

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaOx films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaOx by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaOx conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaOx films is phonon-assisted tunneling between the traps.