Pressure Dependence of the Structural and Superconducting Properties of the Bi-Based Superconductor Bi2Pd3Se2.

The structural and superconducting properties of the Bi-based compound Bi2Pd3Se2 were investigated over a wide pressure range. The prepared Bi2Pd3Se2 sample was a superconductor with a superconducting transition temperature, Tc, of approximately 3.0 K, which differed from a previous report (Tc of less than 1.0 K). At ambient pressure, the powder X-ray diffraction (XRD) pattern of the Bi2Pd3Se2 sample was consistent with that previously reported for Bi2Pd3Se2. The Rietveld method was used to refine the crystal structure, which had a space group of C2/m (No. 12), as reported previously. This compound showed no clear anomaly due to the charge-density-wave (CDW) transition, as seen from the temperature dependence of magnetic susceptibility. However, the temperature dependence of electrical resistivity indicated a clear anomaly, presumably because of the CDW transition in the low-pressure range; the CDW transition temperature was approximately 230 K. The XRD patterns of the Bi2Pd3Se2 sample were measured at 0.160-22.7 GPa, and the patterns were well analyzed by both the Le Bail and Rietveld refinement methods, showing no structural phase transitions in the above pressure range. The pressure dependence of Tc of Bi2Pd3Se2 was recorded based on the temperature dependence of the electrical resistance, which showed an almost constant Tc at 0-13.7 GPa, and the Tc-pressure (p) behavior was fully discussed.

Observation of the Superstructure in Fe5-xGeTe2 by X-ray Fluorescence Holography.

Fe5-xGeTe2 is a two-dimensional van der Waals material that exhibits ferromagnetic order with a high Curie temperature (TC) of around room temperature. In addition to TC, two magnetic transitions occur with decreasing temperature, and a charge-ordered state is observed at low temperatures. We employed Ge Kα X-ray fluorescence holography (XFH) for Fe5-xGeTe2 to directly investigate the local structure in the charge-ordered state, i.e., the 3×3 superstructure. The Ge Kα XFH results revealed local atomic structures around the Ge atom, thus clarifying the simultaneous locations and arrangements of the Te, Fe, and Ge atoms. The atomic positions relative to the Ge atom are useful for understanding the coexistence of the ideal 1 × 1 structure and 3×3 superstructure found in the charge-ordered state.

Structural Characterization of Graphite Analogue BCx Synthesized Under Various Conditions and Its Application to Ti Intercalation.

A graphite-like material boron carbide (BCx) was synthesized under various heat treatment conditions and extensively characterized. First, we synthesized the BCx precursor phase by a single-step reaction using a mixed solution of BBr3 and C6H6. We confirmed that the precursor phase had a graphite-like structure with B-C chemical bonds, but its crystallinity was poor. To improve their crystallinity, we annealed the precursor sample at high temperature using a high-frequency furnace and determined the annealing condition. We also investigated the magnetic properties of BCx. The high-temperature annealing for the precursor phase yields the highest Pauli paramagnetic susceptibility χPauli, indicating the highest density of states at the Fermi level. Accordingly, the high-temperature treatment for the precursor phase is significant to improve its crystallinity and physical properties. In addition, we synthesized a Ti-intercalated material TiBC by using the same procedure as that for making the BCx precursor phase. The crystal structure can be indexed by the AlB2 structure, indicating that Ti atoms are intercalated between the BC layers. The χPauli value of TiBC is obtained to be 1 order of magnitude smaller than that of BCx, suggesting the compensation of hole carriers by electron doping through Ti intercalation into the BCx system.

Pressure Dependence of Superconductivity in a Charge-Density-Wave Superconductor Bi2Rh3Se2.

The structural and superconducting properties of a Bi-based compound, Bi2Rh3Se2, are investigated over a wide pressure range. Bi2Rh3Se2 is a superconductor with a superconducting transition temperature, Tc, of 0.7 K. This compound is in a charge-density-wave (CDW) state below 240 K, which implies the coexistence of superconducting and CDW states at low temperatures. Here, the superconducting properties of Bi2Rh3Se2 are studied from the perspective of the temperature dependence of electrical resistance (R) at high pressures (p's). The pressure dependence of Tc of Bi2Rh3Se2 shows a slow increase in Tc at 0-15.5 GPa, and the Tc slowly decreases with pressure above 15.5 GPa, which is markedly different from that of normal superconductors because the value of Tc should simply decrease owing to the decrease in density of states (DOS) on the Fermi level, N(εF), driven by a simple shrinkage of the lattice under pressure. To ascertain the origin of such a dome-like Tc-p behavior, the crystal structure of Bi2Rh3Se2 was explored over a wide pressure range of 0-20 GPa on the basis of powder X-ray diffraction; no structural phase transitions or simple shrinkage of the lattice was observed. This result implies that the increase in Tc against pressure cannot simply be explained from a structural point of view. In other words, a direct relation between superconductivity and crystal structure was not found. On the other hand, the CDW transition became ambiguous at pressures higher than 3.8 GPa, suggesting that the Tc had been suppressed by the CDW transition in a low pressure range. Thus, the findings suggest that for Bi2Rh3Se2, Tc is enhanced through the suppression of CDW transition, which may be reasonable because the CDW-ordered state restrains the charge fluctuation to weaken the electron-phonon coupling and opens the gap to decrease the density of states on the Fermi level. The obtained dome-like Tc-p behavior indicates the possibility of Bi2Rh3Se2 being an exotic superconductor.

Semiconductor-metal transition in Bi2Se3 caused by impurity doping.

Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor-metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi2Se3 were studied. Single-crystal X-ray diffraction (SC-XRD) showed no structural transitions but slight shrinkage of the lattice, indicating no structural origin of the transition. To better understand electronic properties of Ag-doped Bi2Se3, extended analyses of Hall effect and electric-field effect were carried out. Hall effect measurements revealed that the reduction of resistance was accompanied by increases in not only carrier density but carrier mobility. The field-effect mobility is different for positive and negative gate voltages, indicating that the EF is located at around the bottom of the bulk conduction band (BCB) and that the carrier mobility in the bulk is larger than that at the bottom surface at all temperatures. The pinning of the EF at the BCB is found to be a key issue to induce the S-M transition, because the transition can be caused by depinning of the EF or the crossover between the bulk and the top surface transport.

Superconducting Behavior of BaTi2(Sb1-yBiy)2O under Pressure.

The crystal structure and superconducting properties of a new type of titanium-pnictide superconductor, BaTi2(Sb1-yBiy)2O (y = 0.2, 0.5, and 0.8), are comprehensively investigated over a wide pressure range to elucidate the effect of substituting Bi for Sb on the superconducting behavior. The behavior of superconducting properties under pressure changes drastically with y, as expected from the double-dome Tc-y phase diagram obtained at ambient pressure. In this study, three BaTi2(Sb1-yBiy)2O samples (y = 0.2, 0.5, and 0.8) are considered, which correspond to the first superconducting dome, nonsuperconducting part, and second superconducting dome, respectively, in the Tc-y phase diagram. The crystal of BaTi2(Sb1-yBiy)2O with y = 0.2 shows a clear collapse transition, i.e., a drastic shrinkage of the lattice constant c at ca. 5 GPa. Strictly speaking, the collapsed crystal phase coexists with the noncollapsed phase above 5 GPa. On the other hand, BaTi2(Sb1-yBiy)2O with y = 0.8 shows a continuous change in the crystal lattice with pressure, i.e., no collapse transitions. The pressure dependence of Tc for BaTi2(Sb1-yBiy)2O with y = 0.2 shows a drastic increase in Tc at approximately 5 GPa, where the collapse transition occurs, indicating a clear pressure-induced superconducting phase transition related to the collapse transition. The value of Tc for BaTi2(Sb1-yBiy)2O with y = 0.8 increases slightly up to ∼2 GPa and is almost constant at 2-13 GPa. It is found that the superconducting behavior under pressure can be unambiguously classified by y based on the double-dome Tc-y phase diagram, indicative of distinguishable superconducting features at different y values. In this study, we comprehensively discuss the superconducting properties of the exotic material, BaTi2(Sb1-yBiy)2O, with a double-dome Tc-y phase diagram.

Pressure dependence of superconductivity in alkali-Bi compounds KBi2 and RbBi2.

The structural and superconducting properties of alkali-Bi-based compounds, KBi2 and RbBi2, were investigated over a wide pressure range for the first time. The samples of KBi2 and RbBi2 were prepared using a liquid ammonia (NH3) technique, and demonstrated superconductivity with superconducting transition temperatures, Tc, of 3.50 and 4.21 K at ambient pressure, respectively. The onset superconducting transition temperature, Tconset, of KBi2 decreased slightly; however, it suddenly jumped at 2 GPa and increased gradually with pressure, indicating the presence of two superconducting phases in the low-pressure range. The pressure-dependent X-ray diffraction patterns indicate that the KBi2 sample decomposed into KBi and Bi at pressures higher than 2.5 GPa. Moreover, a discontinuous change in Tconset was observed for KBi2 at 9 GPa, which reflects the decomposition of KBi2 into KBi and Bi. By contrast, the value of Tconset of RbBi2 was almost constant over a pressure range of 0-8 GPa. Thus, the superconducting properties and stability of alkali-Bi-based compounds against pressure were comprehensively explored in this study. In addition, the superconducting Cooper pair symmetry was investigated from the magnetic field dependence of Tc of KBi2 at 0.790 and 2.32 GPa, and of RbBi2 at 1.17 GPa, indicating the exact deviation from the simple s-wave paring model, which may be due to the complex electronic structure of Bi. The results elucidated the exotic superconducting properties of KBi2 and RbBi2 based on the pressure and magnetic field dependence of Tc and verified the chemical stability of KBi2 under pressure.

Evaluation of Effective Field-Effect Mobility in Thin-Film and Single-Crystal Transistors for Revisiting Various Phenacene-Type Molecules.

The magnitude of the field-effect mobility µ of organic thin-film and single-crystal field-effect transistors (FETs) has been overestimated in certain recent studies. These reports set alarm bells ringing in the research field of organic electronics. Herein, we report a precise evaluation of the µ values using the effective field-effect mobility, µeff, a new indicator that is recently designed to prevent the FET performance of thin-film and single-crystal FETs based on various phenacene molecules from being overestimated. The transfer curves of a range of FETs based on phenacene are carefully categorized on the basis of a previous report. The exact evaluation of the value of µeff depends on the exact classification of each transfer curve. The transfer curves of all our phenacene FETs could be successfully classified based on the method indicated in the aforementioned report, which made it possible to evaluate the exact value of µeff for each FET. The FET performance based on the values of µeff obtained in this study is discussed in detail. In particular, the µeff values of single-crystal FETs are almost consistent with the µ values that were reported previously, but the µeff values of thin-film FETs were much lower than those previously reported for µ, owing to a high absolute threshold voltage, |V th|. The increase in the field-effect mobility as a function of the number of benzene rings, which was previously demonstrated based on the µ values of single-crystal FETs with phenacene molecules, is well reproduced from the µeff values. The FET performance is discussed based on the newly evaluated µeff values, and the future prospects of using phenacene molecules in FET devices are demonstrated.

Superconducting properties of BaBi3 at ambient and high pressures.

Herein, we report the preparation and characterization of BaBi3 clarified by DC magnetic susceptibility, powder X-ray diffraction (XRD), and electrical transport. The superconducting properties of BaBi3 were elucidated through the magnetic and electrical transport properties in a wide pressure range. The superconducting transition temperature, Tc, showed a slight decrease (or almost constant Tc) against pressure up to 17.2 GPa. The values of the upper critical field, Hc2, at 0 K, were determined to be 1.27 T at 0 GPa and 3.11 T at 2.30 GPa, using the formula, because p-wave pairing appeared to occur for this material at both pressures, indicating the unconventionality of superconductivity. This result appears to be consistent with the topological non-trivial nature of superconductivity predicted theoretically. The pressure-dependent XRD patterns measured at 0-20.1 GPa indicated no structural phase transitions up to 20.1 GPa, i.e., the structural phase transitions from the α phase to the ß or γ phase which are induced by an application of pressure were not observed, contrary to the previous report, demonstrating that the α phase is maintained over the entire pressure range. Admittedly, the lattice constants and the volume of the unit cell, V, steadily decrease with increasing pressure up to 20.1 GPa. In this study, the plots of Tcversus p and V versus p of BaBi3 are depicted over a wide pressure range for the first time.

Superconductivity of topological insulator Sb2Te3-ySeyunder pressure.

The crystal structures of Sb2Te3-ySey(y= 0.6 andy= 1.2) at 0-24 GPa were investigated by synchrotron x-ray diffraction. The stoichiometry of Sb2Te3-ySeyused in this study was determined to be Sb2Te2.19(9)Se0.7(2)fory= 0.6 and Sb2Te1.7(1)Se1.3(3)fory= 1.2, on the basis of energy-dispersive x-ray spectroscopy. The sample of Sb2Te2.19(9)Se0.7(2)showed a structural phase transition from a rhombohedral structure (space group No. 166,R3¯m) (phase I) to a monoclinic structure (space group No. 12,C2/m) (phase II), with increasing pressure up to ∼9 GPa. A new structural phase (phase II') emerged at 17.7 GPa, a monoclinic structure with the space groupC2/c(No. 15). Finally, a 9/10-fold monoclinic structure (space group No. 12,C2/m) (phase III) was observed at 21.8 GPa. In contrast, the sample of Sb2Te1.7(1)Se1.3(3)provided only phase I (space group No. 166,R3¯m) and phase II (space group No. 12,C2/m), showing one structural phase transition from 0-19.5 GPa. These samples were not superconductors at ambient pressure, but superconductivity suddenly appeared with increasing pressure. Superconductivity with superconducting transition temperatures (Tc's) of 2 and 4 K was observed above 6 GPa in phase I of Sb2Te2.19(9)Se0.7(2). In this sample, theTcvalues of 6 and 9 K were observed in phase II and phase II' or III of Sb2Te2.19(9)Se0.7(2), respectively. Superconductivity withTc's of 4 and 5 K suddenly emerged in Sb2Te1.7(1)Se1.3(3)at 13.6 GPa, which corresponds to phase II, and it evolved to 6.0 K under further increased pressure. ATcvalue of 9 K was finally found above 15 GPa. The magnetic field dependence ofTcin phase II of Sb2Te2.19(9)Se0.7(2)and Sb2Te1.7(1)Se1.3(3)followed ap-wave polar model, suggesting topologically nontrivial superconductivity.

Photochemical synthesis and device application of acene-phenacene hybrid molecules, dibenzo[n]phenacenes (n = 5-7).

Dibenzo[n]phenecenes (DBnPs, n = 5-7) were conveniently synthesised through Mallory photocyclization as the key step. Effective mobilities of single-crystal field-effect transistors of DBnPs were evaluated to demonstrate that C2h-symmetrical DB6P shows higher performance than C2v-symmetrical DB5P and DB7P.

Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors.

Electronic devices relying on the combination of different conjugated organic materials are considerably appealing for their potential use in many applications such as photovoltaics, light emission, and digital/analog circuitry. In this study, the electrical response of field-effect transistors achieved through the evaporation of picene and PDIF-CN2 molecules, two well-known organic semiconductors with remarkable charge transport properties, was investigated. With the main goal to get a balanced ambipolar response, various device configurations bearing double-layer, triple-layer, and codeposited active channels were analyzed. The most suitable choices for the layer deposition processes, the related characteristic parameters, and the electrode position were identified to this purpose. In this way, ambipolar organic field-effect transistors exhibiting balanced mobility values exceeding 0.1 cm2 V-1 s-1 for both electrons and holes were obtained. These experimental results highlight also how the combination between picene and PDIF-CN2 layers allows tuning the threshold voltages of the p-type response. Scanning Kelvin probe microscopy (SKPM) images acquired on picene/PDIF-CN2 heterojunctions suggest the presence of an interface dipole between the two organic layers. This feature is related to the partial accumulation of space charge at the interface being enhanced when the electrons are depleted in the underlayer.

Emergence of a Pressure-Driven Superconducting Phase in Ba0.77Na0.23Ti2Sb2O.

We investigated the pressure dependence of electric transport in a superconducting sample, Ba0.77Na0.23Ti2Sb2O, to complete the phase diagram of superconducting transition temperature (Tc) against pressure (p). This superconducting sample exhibits a Tc value of 5.8 K at ambient pressure. Here, the superconductivity of the recently reported sample was investigated over a wide pressure range. The Tc value monotonously decreased with pressure below 8 GPa. Interestingly, the Tc value rapidly increased above 8 GPa and slowly declined with pressure above 11 GPa. Thus, a new superconducting phase was discovered above ∼9 GPa. The crystal structure of Ba0.77Na0.23Ti2Sb2O was also elucidated at 0-22.0 GPa with synchrotron X-ray powder diffraction. Consequently, an evident relation between the crystal structure and the superconductivity was revealed, namely, a clear structural phase transition was observed at 8-11 GPa, where the Tc value rapidly increased against pressure. This study provides detailed information on the superconductivity of Ba0.77Na0.23Ti2Sb2O under pressure, which will lead to a comprehensive understanding of pressure-driven superconductivity.

Superconductivity in topological insulator ß-PdBi2 under pressure.

The topological insulator PdBi2 exhibits two different crystal phases at ambient pressure, i.e., 'α-PdBi2' and ' -PdBi2'. The pressure dependence of crystal structure and superconductivity of α-PdBi2 has been fully elucidated thus far. However, the physical properties of ß-PdBi2 crystals under pressure have not been sufficiently investigated. In this study, we fully investigate the crystal structure and superconductivity of ß-PdBi2 under pressure based on synchrotron x-ray diffraction (XRD) patterns. The temperature dependence of ß-PdBi2 indicates its superconductivity with a superconducting transition temperature (T c) as high as 4.10 K, and its crystal structure is tetragonal [space group of I4/mmm (no. 139)]. The XRD patterns at 0-22.0 GPa indicate no structural phase transitions, and the unit cell volume shrinks monotonically with pressure, unlike the behavior of α-PdBi2. Furthermore, α-PdBi2 transformed to ß-PdBi2 under pressure. This suggests that ß-PdBi2 is stable under pressure. The superconductivity is clearly observed at 0-11.8 GPa, and the value of T c is almost constant at ∼4.4 K. The temperature dependence of the upper critical field at ambient pressure and 10.7 GPa indicates that the superconductivity is not attributed to a simple s-wave dirty limit but an s-wave clean or p-wave polar model. This is the first systematic study of superconductivity of topological insulator ß-PdBi2 under pressure.

Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide.

Organic field-effect transistors (FETs) can be applied to radio-frequency identification tags (RFIDs) and active-matrix flat-panel displays. For RFID application, a cardinal functional block is a ring oscillator using an odd number of inverters to convert DC voltage to AC. Herein, we report the properties of two ring oscillators, one formed with [6]phenacene for a p-channel FET and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) for an n-channel FET, and one formed with 3,10-ditetradecylpicene ((C14H29)2-picene) for a p-channel FET and PTCDI-C8 for an n-channel FET. The former ring oscillator provided a maximum oscillation frequency, f osc of 26 Hz, and the latter a maximum f osc of 21 Hz. The drain-drain voltage, V DD, applied to these ring oscillators was 100 V. This may be the first step towards a future practical ring oscillator using phenacene molecules. The values of field-effect mobility, µ in the p-channel [6]phenacene FET and n-channel PTCDI-C8 FET, which form the building blocks in the ring oscillator with an f osc value of 26 Hz, are 1.19 and 1.50 × 10-1 cm2 V-1 s-1, respectively, while the values in the p-channel (C14H29)2-picene FET and n-channel PTCDI-C8 FET, which form the ring oscillator with an f osc of 21 Hz, are 1.85 and 1.54 × 10-1 cm2 V-1 s-1, respectively. The µ values in the p-channel FETs are higher by one order of magnitude than those of the n-channel FET, which must be addressed to increase the value of f osc. Finally, we fabricated a ring oscillator with ZrO2 instead of parylene for the gate dielectric, which provided the low-voltage operation of the ring oscillator, in which [6]phenacene and PTCDI-C8 thin-film FETs were employed. The value of f osc obtained in the ring oscillator was 24 Hz. In this ring oscillator, the V DD value applied was limited to 20 V. The durability of the ring oscillators was also investigated, and the bias stress effect on the f osc and the amplitude of the output voltage, V out are discussed. This successful operation of ring oscillators represents an important step towards the realization of future practical integrated logic gate circuits using phenacene molecules.

Superconducting behavior of BaTi2Bi2O and its pressure dependence.

A new superconducting sample, BaTi2Bi2O, was synthesized and characterized over a wide pressure range. The superconducting transition temperature, Tc, of BaTi2Bi2O was 4.33 K at ambient pressure. The crystal structure was tetragonal (space group of P4/mmm (No. 123)), according to the X-ray diffraction (XRD) pattern at ambient pressure. The XRD pattern was analyzed using the Le Bail method. The magnetic-field dependence of the magnetization at different temperatures was precisely investigated to elucidate the characteristics of the superconductivity. The pressure-dependent XRD patterns showed absence of structural phase transitions up to 19.8 GPa. The superconducting properties of BaTi2Bi2O were investigated under pressure. Tc monotonously increased with the pressure (p) up to 4.0 GPa and saturated above 4.0 GPa. The variations in the Tc-p plot were thoroughly analyzed. The Cooper pair symmetry (or superconducting pairing mechanism) was analyzed based on the magnetic field dependence of the superconductivity at ambient and high pressures, which indicated a sign of p-wave pairing for the superconductivity of BaTi2Bi2O, i.e., topologically nontrivial sign was suggested for BaTi2Bi2O.

Superconductivity in Bi2-x Sb x Te3-y Se y (x = 1.0 and y = 2.0) under pressure.

The crystal structure of BiSbTeSe2 (Bi2-x Sb x Te3-y Se y (x = 1.0 and y = 2.0)) at 0-29 GPa is investigated through synchrotron x-ray diffraction (XRD) and two structural phase transitions are discovered. The stoichiometry of BiSbTeSe2 employed in this study is Bi1.19(4)Sb0.81(4)Te0.83(4)Se2.17(4), as determined from energy-dispersive x-ray spectroscopy. The sample demonstrated structural transitions, from a rhombohedral structure (space group no 166, R [Formula: see text] m) (phase I) to a monoclinic structure (space group no 12, C2/m) (phase II), and from phase II to a 9/10-fold monoclinic structure (space group no 12, C2/m) (phase III). The temperature dependence of resistance (R-T plot) exhibited a semiconducting behavior in a low pressure range and changed from semiconducting to metallic behavior with increasing pressure. Pressure-driven superconductivity is observed above 9.1 GPa in Bi1.19(4)Sb0.81(4)Te0.83(4)Se2.17(4). The pressure phase corresponds to phase II. The superconducting transition temperature, T c, increased with pressure. The maximum T c value is 8.3 K at 19.1 GPa. The magnetic field dependence of T c in phase II of Bi1.19(4)Sb0.81(4)Te0.83(4)Se2.17(4) is proceeded by a p-wave polar model, indicating topologically nontrivial superconductivity. In addition, the emergence of superconductivity and the change in superconducting behavior are closely associated with the structural transitions.

Structure and superconducting properties of multiple phases of (NH3) y AE x FeSe (AE: Ca, Sr and Ba).

We synthesized the alkaline-earth metal-doped FeSe compounds (NH3) y AE x FeSe (AE: Ca, Sr and Ba), using the liquid NH3 technique, to determine their superconducting properties and crystal structures. Multiple superconducting phases were obtained in each sample of (NH3) y Ca x FeSe and (NH3) y Ba x FeSe, which showed two superconducting transition temperatures (T c's) as high as 37-39 K and 47-48 K at ambient pressure, hereinafter referred to as the 'low-T c phase' and 'high-T c phase', respectively. The high-T c phases in (NH3) y Ca x FeSe and (NH3) y Ba x FeSe were metastable, and rapidly converted to their low-T c phases. However, T c values of 38.4 K and 35.6 K were recorded for (NH3) y Sr x FeSe, which displayed different behavior than (NH3) y Ca x FeSe and (NH3) y Ba x FeSe. The Le Bail fitting of x-ray diffraction (XRD) patterns provided lattice constants of c = 16.899(1) Å and c = 16.8630(8) Å for the low-T c phases of (NH3) y Ca x FeSe and (NH3) y Ba x FeSe, respectively. The lattice constants of their high-T c phases could not be determined due to the disappearance of the high T c phase within a few days. The XRD pattern for (NH3) y Sr x FeSe indicated the coexistence of two phases with c = 16.899(3) Å and c = 15.895(4) Å. The former value of c in (NH3) y Sr x FeSe is almost the same as those of the low-T c phases in (NH3) y Ca x FeSe and (NH3) y Ba x FeSe. Therefore, the phase with c = 16.899(3) Å in (NH3) y Sr x FeSe must correspond to the superconducting phase with the T c of 38.4 K, while the superconducting phase with T c = 35.6 K is assigned to the crystal phase with c = 15.895(4) Å. For (NH3) y Sr x FeSe, a high-T c phase with T c = 47-48 K has not yet been obtained, but a new phase showing the T c value of 35.6 K was clearly obtained. This is the first systematic study of the preparation, crystal structure, and superconductivity of alkaline-earth metal-doped FeSe, (NH3) y AE x FeSe.

A new protocol for the preparation of superconducting KBi2.

A superconducting KBi2 sample was successfully prepared using a liquid ammonia (NH3) technique. The temperature dependence of the magnetic susceptibility (M/H) showed a superconducting transition temperature (T c) as high as 3.6 K. In addition, the shielding fraction at 2.0 K was evaluated to be 87%, i.e., a bulk superconductor was realized using the above method. The T c value was the same as that reported for the KBi2 sample prepared using a high-temperature annealing method. An X-ray diffraction pattern measured based on the synchrotron X-ray radiation was analyzed using the Rietveld method, with a lattice constant, a, of 9.5010(1) Šunder the space group of Fd3̄m (face-centered cubic, no. 227). The lattice constant and space group found for the KBi2 sample using a liquid NH3 technique were the same as those reported for KBi2 through a high-temperature annealing method. Thus, the superconducting behavior and crystal structure of the KBi2 sample obtained in this study are almost the same as those for the KBi2 sample reported previously. Strictly speaking, the magnetic behavior of the superconductivity was different from that of a KBi2 sample reported previously, i.e., the KBi2 sample prepared using a liquid NH3 technique was a type-II like superconductor, contrary to that prepared using a high-temperature annealing method, the reason for which is fully discussed. These results indicate that the liquid NH3 technique is effective and simple for the preparation of a superconducting KBi2. In addition, the topological nature of the superconductivity for KBi2 was not confirmed.

Facile synthesis of picenes incorporating imide moieties at both edges of the molecule and their application to n-channel field-effect transistors.

Picene derivatives incorporating imide moieties along the long-axis direction of the picene core (C n -PicDIs) were conveniently synthesized through a four-step synthesis. Photochemical cyclization of dinaphthylethenes was used as the key step for constructing the picene skeleton. Field-effect transistor (FET) devices of C n -PicDIs were fabricated by using ZrO2 as a gate substrate and their FET characteristics were investigated. The FET devices showed normally-off n-channel operation; the averaged electron mobility (µ) was evaluated to be 2(1) × 10-4, 1.0(6) × 10-1 and 1.4(3) × 10-2 cm2 V-1 s-1 for C4-PicDI, C8-PicDI and C12-PicDI, respectively. The maximum µ value as high as 2.0 × 10-1 cm2 V-1 s-1 was observed for C8-PicDI. The electronic spectra of C n -PicDIs in solution showed the same profiles irrespective of the alkyl chain lengths. In contrast, in thin films, the UV absorption and photoelectron yield spectroscopy (PYS) indicated that the lowest unoccupied molecular orbital (LUMO) level of C n -PicDIs gradually lowered upon the elongation of the alkyl chains, suggesting that the alkyl chains modify intermolecular interactions between the C n -PicDI molecules in thin films. The present results provide a new strategy for constructing a high performance n-channel organic semiconductor material by utilizing the electronic features of phenacenes.