Increased Ion Temperature and Neutron Yield Observed in Magnetized Indirectly Driven D_{2}-Filled Capsule Implosions on the National Ignition Facility.

The application of an external 26 Tesla axial magnetic field to a D_{2} gas-filled capsule indirectly driven on the National Ignition Facility is observed to increase the ion temperature by 40% and the neutron yield by a factor of 3.2 in a hot spot with areal density and temperature approaching what is required for fusion ignition [1]. The improvements are determined from energy spectral measurements of the 2.45 MeV neutrons from the D(d,n)^{3}He reaction, and the compressed central core B field is estimated to be ∼4.9 kT using the 14.1 MeV secondary neutrons from the D(T,n)^{4}He reactions. The experiments use a 30 kV pulsed-power system to deliver a ∼3 µs current pulse to a solenoidal coil wrapped around a novel high-electrical-resistivity AuTa_{4} hohlraum. Radiation magnetohydrodynamic simulations are consistent with the experiment.

Impact of pre-existing disorder on radiation defect dynamics in Si.

The effect of pre-existing lattice defects on radiation defect dynamics in solids remains unexplored. Here, we use a pulsed beam method to measure the time constant of defect relaxation for 500 keV Ar ion bombardment of Si at 100 °C with the following two representative types of pre- existing lattice disorder: (i) point defect clusters and (ii) so-called "clamshell" defects consisting of a high density of dislocations. Results show that point defect clusters slow down defect relaxation processes, while regions with dislocations exhibit faster defect interaction dynamics. These experimental observations demonstrate that the dynamic aspects of damage buildup, attributed to defect trapping-detrapping processes, can be controlled by defect engineering.

Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si.

The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ∼-30 °C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ∼0.1 eV, independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ∼0.04 at.%, evidenced by an increase in the activation energy. These results clearly demonstrate a crucial role of the collision cascade density and can be used to predict radiation defect dynamics in Si.

Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids.

The buildup of radiation damage in ion-irradiated crystals often depends on the spatial distribution of atomic displacements within collision cascades. Although collision cascades have previously been described as fractals, the correlation of their fractal parameters with experimental observations of radiation damage buildup remains elusive. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 3C-SiC irradiated at 100 °C with ions of different masses. These data, together with results of previous studies of SiC and Si, are analyzed with a model of radiation damage formation which accounts for the fractal nature of collision cascades. Our emphasis is on the extraction of the effective defect diffusion length from pulsed beam measurements. Results show that, for both Si and SiC, collision cascades are mass fractals with fractal dimensions in the range of ~1-2, depending on ion mass, energy, and the depth from the sample surface. Within our fractal model, the effective defect diffusion length is ~10 nm for SiC and ~20 nm for Si, and it decreases with increasing cascade density. These results demonstrate a general method by which the fractal nature of collision cascades can be used to explain experimental observations and predict material's response to radiation.

Dynamic annealing in Ge studied by pulsed ion beams.

The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100-160 °C under pulsed beam irradiation with 500 keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3 ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38 nm at 110 °C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130 °C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3 eV.

Effects of collision cascade density on radiation defect dynamics in 3C-SiC.

Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions. We find that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization cross-section constant and the time constant of dynamic annealing. The cascade density behavior of these parameters is non-linear and appears to be uncorrelated. These results demonstrate clearly (and quantitatively) an important role of the collision cascade density in dynamic radiation defect processes in 3C-SiC.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si.

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10-0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide.

Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear ceramic and wide-band-gap semiconductor material. The lack of predictability is largely related to the complex, dynamic nature of radiation defect formation. Here, we use a novel pulsed-ion-beam method to study dynamic annealing in 4H-SiC ion-bombarded in the temperature range of 25-250 °C. We find that, while the defect recombination efficiency shows an expected monotonic increase with increasing temperature, the defect lifetime exhibits a non-monotonic temperature dependence with a maximum at ~100 °C. This finding indicates a change in the dominant defect interaction mechanism at ~100 °C. The understanding of radiation defect dynamics may suggest new paths to designing radiation-resistant materials.

Hydrogen crystallization in low-density aerogels.

Crystallization of liquids confined in disordered low-density nanoporous scaffolds is poorly understood. Here, we use relaxation calorimetry to study the liquid-solid phase transition of H2 in a series of silica and carbon (nanotube- and graphene-based) aerogels with porosities ≳94%. Results show that freezing temperatures of H2 inside all the aerogels studied are depressed but do not follow predictions of the Gibbs-Thomson theory based on average pore diameters measured by conventional gas sorption techniques. Instead, we find that, for each material family investigated, the depression of average freezing temperatures scales linearly with the ratio of the internal surface area (measured by gas sorption) and the total pore volume derived from the density of aerogel monoliths. The slope of such linear dependences is, however, different for silica and carbon aerogels, which we attribute to microporosity of carbons and the presence of macropores in silica aerogels. Our results have important implications for the analysis of pore size distributions of low-density nanoporous materials and for controlling crystallization of fuel layers in targets for thermonuclear fusion energy applications.

Freezing and melting of hydrogen confined in nanoporous silica.

Thermodynamic properties of condensed hydrogen in geometric confinement remain poorly understood. Here, we use relaxation calorimetry to study solidification and melting of H2 in a series of Vycor-type nanoporous silica glasses with interconnected pores with average diameters in a wide range of ∼100-3000 Å. We find that the depression of freezing and melting temperatures for this quantum system follows the classical Gibbs-Thomson-like behavior, scaling inversely with the pore size when correlated to pore diameters measured directly by electron microscopy, rather than conventional gas sorption techniques. The shapes of pore size distributions derived from hydrogen thermoporometry are, however, more complex than those measured by gas sorption. The ratio between temperatures of the depression of freezing and melting suggests that the actual pore geometry in Vycor-type nanoporous glasses deviates from cylindrical.

Relaxation calorimeter for hydrogen thermoporometry.

A relaxation calorimeter for measuring the heat capacity of hydrogen isotopes in nanoporous solids is described. Apparatus' features include (i) cooling by a pulse tube refrigerator, (ii) a modular design, allowing for rapid reconfiguration and sample turn around, (iii) a thermal stability of ≲1 mK, and (iv) a bottom temperature of ~5 K. The calorimeter is tested on effective heat capacity measurements of H2 in Vycor (silica) nanoporous glass, yielding a very detailed pore size distribution analysis with an effectively sub-Angstrom resolution.

Pulsed ion beam measurement of defect diffusion lengths in irradiated solids.

Radiation-generated point defects in solids often experience dynamic annealing-diffusion and interaction processes after the thermalization of collision cascades. The length scale of dynamic annealing can be described in terms of the characteristic defect diffusion length (Ld). Here, we propose to measure Ld by a pulsed beam method. Our approach is based on the observation of enhanced defect production when, for individual ion pulses, the average separation between adjacent damage regions is smaller than Ld. We obtain a value for Ld of ~30 nm for float-zone Si crystals bombarded at room temperature with 500 keV Ar ions.

Pulsed ion beam measurement of the time constant of dynamic annealing in Si.

Under ion irradiation, all crystalline materials display some degree of dynamic annealing when defects experience evolution after the thermalization of collision cascades. The exact time scales of such defect relaxation processes are, however, unknown even for Si at room temperature. Here, we use a pulsed ion-beam method to measure a characteristic time constant of dominant dynamic annealing processes of about 6 ms in Si bombarded at room temperature with 500 keV Ar ions.

Mechanisms of atomic layer deposition on substrates with ultrahigh aspect ratios.

Atomic layer deposition (ALD) appears to be uniquely suited for coating substrates with ultrahigh aspect ratios (> or similar 10(3)), including nanoporous solids. Here, we study the ALD of Cu and Cu3N on the inner surfaces of low-density nanoporous silica aerogel monoliths. Results show that Cu depth profiles in nanoporous monoliths are limited not only by Knudsen diffusion of heavier precursor molecules into the pores, as currently believed, but also by other processes such as the interaction of precursor and reaction product molecules with pore walls. Similar behavior has also been observed for Fe, Ru, and Pt ALD on aerogels. On the basis of these results, we discuss design rules for ALD precursors specifically geared for coating nanoporous solids.

Radiation produced by femtosecond laser-plasma interaction during dielectric breakdown.

Optical breakdown by femtosecond and nanosecond laser pulses in transparent dielectrics produces an ionized region of dense plasma confined within the bulk of the material. This ionized region is responsible for broadband radiation that accompanies the breakdown process. Spectroscopic measurements of the accompanying light have been used to show that, depending on the laser parameters, the spectra may originate from plasma-induced second-harmonic generation, supercontinuum generation, or thermal emission by the plasma. By monitoring the emission from the ionized region, one can ascertain the predominant breakdown mechanism and the morphology of the damage region.