Tuning Valleys and Wave Functions of van der Waals Heterostructures by Varying the Number of Layers: A First-Principles Study.

In van der Waals heterostructures of 2D transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, the influence of additional electron or hole layers on the electronic properties of a MoS2 /WSe2 heterobilayer (HBL), which is a direct bandgap material, is investigated from first principles. Additional layers modify the interlayer hybridization, mostly affecting the quasiparticle energy and real-space extend of hole states at the Γ and electron states at the Q valleys. For a sufficient number of additional layers, the band edges move from K to Q or Γ, respectively. Adding electron layers to the HBL leads to more delocalized K and Q states, while Γ states do not extend much beyond the HBL, even when more hole layers are added. These results suggest a simple and yet powerful way to tune band edges and the real-space extent of the electron and hole wave functions in TMDC heterostructures, potentially affecting strongly the lifetime and dynamics of interlayer excitons.

Twist-angle-dependent interlayer exciton diffusion in WS2-WSe2 heterobilayers.

The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals heterostructures have emerged as a platform for designing exciton superlattices. However, our understanding of the motion of excitons in moiré potentials is still limited. Here we investigated interlayer exciton dynamics and transport in WS2-WSe2 heterobilayers in time, space and momentum domains using transient absorption microscopy combined with first-principles calculations. We found that the exciton motion is modulated by twist-angle-dependent moiré potentials around 100 meV and deviates from normal diffusion due to the interplay between the moiré potentials and strong exciton-exciton interactions. Our experimental results verified the theoretical prediction of energetically favourable K-Q interlayer excitons and showed exciton-population dynamics that are controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. These results form a basis to investigate exciton and spin transport in van der Waals heterostructures, with implications for the design of quantum communication devices.

Correction: Synthetic 2-D lead tin sulfide nanosheets with tuneable optoelectronic properties from a potentially scalable reaction pathway.

[This corrects the article DOI: 10.1039/C8SC04018D.].

Luminescent Emission of Excited Rydberg Excitons from Monolayer WSe2.

We report the experimental observation of radiative recombination from Rydberg excitons in a two-dimensional semiconductor, monolayer WSe2, encapsulated in hexagonal boron nitride. Excitonic emission up to the 4 s excited state is directly observed in photoluminescence spectroscopy in an out-of-plane magnetic field up to 31 T. We confirm the progressively larger exciton size for higher energy excited states through diamagnetic shift measurements. This also enables us to estimate the 1 s exciton binding energy to be about 170 meV, which is significantly smaller than most previous reports. The Zeeman shift of the 1 s to 3 s states, from both luminescence and absorption measurements, exhibits a monotonic increase of the g-factor, reflecting nontrivial magnetic-dipole-moment differences between ground and excited exciton states. This systematic evolution of magnetic dipole moments is theoretically explained from the spreading of the Rydberg states in momentum space.

Synthetic 2-D lead tin sulfide nanosheets with tuneable optoelectronic properties from a potentially scalable reaction pathway.

Solventless thermolysis of molecular precursors followed by liquid phase exfoliation allows access to two-dimensional IV-VI semiconductor nanomaterials hitherto unreachable by a scalable processing pathway. Firstly, the use of metal dithiocarbamate precursors to produce bulk alloys in the series Pb1-x Sn x S (0 ≤ x ≤ 1) by thermolysis is demonstrated. The bulk powders are characterised by powder X-ray diffraction (pXRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. It was found that there is a transition from cubic structures for the Pb-rich alloys including the end compound, PbS (0 ≤ x ≤ 0.4) to layered orthorhombic structures for Sn-rich alloys and the end compound SnS (0.5 ≤ x ≤ 1.0). A smooth elemental progression from lead-rich to tin-rich monochalcogenides across the series of materials is observed. Liquid phase exfoliation was applied to produce two dimensional (2D) nanosheets for a mixed Pb1-x Sn x S alloy (where x = 0.8) in 1-methyl-2-pyrrolidone (NMP) using the synthetic bulk powder as starting material. The nanosheet products were characterized by SEM, atomic force microscopy (AFM) and high angle annular dark field scanning transmission electron microscopy (HAADF STEM). First principle calculations of Pb1-x Sn x S alloys show that the Sn content x modifies the size of the band gap by several 100 meV and that x changes the gap type from indirect in SnS to direct in Pb0.2Sn0.8S. These results are supported by UV-Vis spectroscopy of exfoliated Pb0.2Sn0.8S. The method employed demonstrates a new, scalable, processing pathway which can potentially be used to synthesize a range of synthetic layered structures that can be exfoliated to as-yet unaccessed 2D materials with tunable electronic properties.

In-situ Quasi-Instantaneous e-beam Driven Catalyst-Free Formation Of Crystalline Aluminum Borate Nanowires.

The catalyst-assisted nucleation and growth mechanisms for many kinds of nanowires and nanotubes are pretty well understood. At times, though, 1D nanostructures form without a catalyst and the argued growth modes have inconsistencies. One such example is the catalyst-free growth of aluminium borate nanowires. Here we develop an in-situ catalyst-free room temperature growth route for aluminium nanowires using the electron beam in a transmission electron microscope. We provide strong experimental evidence that supports a formation process that can be viewed as a phase transition in which the generation of free-volume induced by the electron beam irradiation enhances the atomic mobility within the precursor material. The enhanced atomic mobility and specific features of the crystal structure of Al5BO9 drive the atomic rearrangement that results in the large scale formation of highly crystalline aluminium borate nanowires. The whole formation process can be completed within fractions of a second. Our developed growth mechanism might also be extended to describe the catalyst-free formation of other nanowires.

Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist.

Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2). Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (Γ̅ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ∼40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at Γ̅ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.

Diameter-Selective Dispersion of Carbon Nanotubes via Polymers: A Competition between Adsorption and Bundling.

The mechanism of the selective dispersion of single-walled carbon nanotubes (CNTs) by polyfluorene polymers is studied in this paper. Using extensive molecular dynamics simulations, it is demonstrated that diameter selectivity is the result of a competition between bundling of CNTs and adsorption of polymers on CNT surfaces. The preference for certain diameters corresponds to local minima of the binding energy difference between these two processes. Such minima in the diameter dependence occur due to abrupt changes in the CNT's coverage with polymers, and their calculated positions are in quantitative agreement with preferred diameters reported experimentally. The presented approach defines a theoretical framework for the further understanding and improvement of dispersion/extraction processes.

Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist.

Molybdenum disulfide bilayers with well-defined interlayer twist angle were constructed by stacking single-crystal monolayers. Varying interlayer twist angle results in strong tuning of the indirect optical transition energy and second-harmonic generation and weak tuning of direct optical transition energies and Raman mode frequencies. Electronic structure calculations show the interlayer separation changes with twist due to repulsion between sulfur atoms, resulting in shifts of the indirect optical transition energies. These results show that interlayer alignment is a crucial variable in tailoring the properties of two-dimensional heterostructures.

Room temperature in situ growth of B/BOx nanowires and BOx nanotubes.

Despite significant advances in the synthesis of nanostructures, our understanding of the growth mechanisms of nanowires and nanotubes grown from catalyst particles remains limited. In this study we demonstrate a straightforward route to grow coaxial amorphous B/BOx nanowires and BOx nanotubes using gold catalyst particles inside a transmission electron microscope at room temperature without the need of any specialized or expensive accessories. Exceedingly high growth rates (over 7 µm/min) are found for the coaxial nanowires, and this is attributed to the highly efficient diffusion of B species along the surface of a nanowire by electrostatic repulsion. On the other hand the O species are shown to be relevant to activate the gold catalysts, and this can occur through volatile O species. The technique could be further developed to study the growth of other nanostructures and holds promise for the room temperature growth of nanostructures as a whole.

SCC-DFTB Parametrization for Boron and Boranes.

We present the results of our recent parametrization of the boron-boron and boron-hydrogen interactions for the self-consistent charge density-functional-based tight-binding (SCC-DFTB) method. To evaluate the performance, we compare SCC-DFTB to full density functional theory (DFT) and wave-function-based semiempirical methods (AM1 and MNDO). Since the advantages of SCC-DFTB emerge especially for large systems, we calculated molecular systems of boranes and pure boron nanostructures. Computed bond lengths, bond angles, and vibrational frequencies are close to DFT predictions. We find that the proposed parametrization provides a transferable and balanced description of both finite and periodic systems.

Graphene: Piecing it together.

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

Highly conductive boron nanotubes: transport properties, work functions, and structural stabilities.

The transport properties, work functions, electronic structure, and structural stability of boron nanotubes with different lattice structures, radii, and chiralities are investigated theoretically. As the atomic structure of boron nanotubes and the related sheets is still under debate, three probable structural classes (nanotubes derived from the α-sheet, the buckled triangular sheet, and the distorted hexagonal sheet) are considered. For comparison with recent transport measurements [J. Mater. Chem. 2010, 20, 2197], the intrinsic conductance of ideal nanotubes with large diameters (D ≈ 10 nm) is determined. All considered boron nanotubes are highly conductive, irrespective of their lattice structures and chiralities, and they have higher conductivities than carbon nanotubes. Furthermore, the work functions of the three sheets and the corresponding large-diameter nanotubes are determined. It is found that the value of the nanotubes obtained from the α-sheet agrees well with the experiment. This indirectly shows that the atomic structure of boron nanotubes is related to the α-sheet. The structural stability of nanotubes with diameters > 2 nm approaches that of the corresponding boron sheets, and α-sheet nanotubes are the most stable ones. However, for smaller diameters the relative stabilities change significantly, and for diameters < 0.5 nm the most stable structures are zigzag nanotubes of the buckled triangular sheet. For structures related to the distorted hexagonal sheet the most stable nanotube is discovered to have a diameter of 0.39 nm.

Functionalizing graphene by embedded boron clusters.

We present a model system that might serve as a blueprint for the controlled layout of graphene based nanodevices. The systems consists of chains of B(7) clusters implanted in a graphene matrix, where the boron clusters are not directly connected. We show that the graphene matrix easily accepts these alternating B(7)-C(6) chains and that the implanted boron components may dramatically modify the electronic properties of graphene based nanomaterials. This suggests a functionalization of graphene nanomaterials, where the semiconducting properties might be supplemented by parts of the graphene matrix itself, but the basic wiring will be provided by alternating chains of implanted boron clusters that connect these areas.

Nanotubular boron-carbon heterojunctions.

Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is illustrated in some detail. Our results also suggest the compatibility of various technologically interesting types of nanotubular materials, leading to different types of nanotubular compound materials, and pointing out the possibility of wiring nanotubular devices within heterogeneous nanotubular networks.