InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays.

The technology of RGBY micro resonant cavity light emitting diodes (micro-RCLEDs) based on quantum dots (QDs) is considered one of the most promising approaches for full-color displays. In this work, we propose a novel structure combining a high color conversion efficiency (CCE) QD photoresist (QDPR) color conversion layer (CCL) with blue light micro RCLEDs, incorporating an ultra-thin yellow color filter. The additional TiO2 particles inside the QDPR CCL can scatter light and disperse QDs, thus reducing the self-aggregation phenomenon and enhancing the eventual illumination uniformity. Considering the blue light leakage, the influences of adding different color filters are investigated by illumination design software. Finally, the introduction of low-temperature atomic layer deposition (ALD) passivation protection technology at the top of the CCL can enhance the device's reliability. The introduction of RGBY four-color subpixels provides a viable path for developing low-energy consumption, high uniformity, and efficient color conversion displays.

Advancing LED technology: the FDCSP element's breakthrough in mini and micro-LED packaging and backlight module enhancement.

In this research, we introduce an advanced methodology for the calculation of bulk light sources tailored for free-form surface design, focusing on the principle of energy conservation. This method is especially relevant for the evolving needs of micro-LED packaging, highlighting its potential in this burgeoning field. Our work includes the development of an algorithm for creating freeform-designed chip-scale package (FDCSP) components. These components seamlessly integrate LEDs and lenses, underscoring our commitment to advancing free-form surface design in chip-level packaging. By adhering to the principle of energy conservation, our approach facilitates a meticulous comparison of simulation outcomes with predefined target functions. This enables the iterative correction of discrepancies, employing layering techniques to refine the design until the simulated results closely align with our goals, as demonstrated by an appropriate difference curve. The practical application of these simulations leads to the innovative design of FDCSP devices. Notably, these devices are not just suitable for traditional applications in backlight modules but are explicitly optimized for the emerging sector of micro-LED packaging. Our successful demonstration of these FDCSP devices within backlight modules represents a significant achievement. It underscores the effectiveness of our design strategy and its expansive potential to transform micro-LED packaging solutions. This research not only contributes to the theoretical understanding of energy conservation in lighting design but also paves the way for groundbreaking applications in micro-LED and backlight module technologies.

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.

This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum drain current, reduce gate leakage, and achieve lower on-resistance (Ron) performance. A comparison was made between the conventional device without the composited barrier and the device with the composited barrier structure. The maximum drain current is significantly increased by 37%, and Ron is significantly reduced by 23%, highlighting the synergistic impact of the composite barrier structure on device performance improvement. This reason can be attributed to the undoped GaN (u-GaN) barrier layer beneath p-GaN, which was introduced to mitigate Mg diffusion in the capping layer, thus addressing its negative effects. Furthermore, the AlN barrier layer exhibits enhanced electrical properties, which can be attributed to the critical role of high-energy-gap properties that increase the 2DEG carrier density and block leakage pathways. These traps impact the device behavior mechanism, and the simulation for a more in-depth analysis of how the composited barrier structure brings improvement is introduced using Synopsys Sentaurus TCAD.

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs.

This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 µm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on-off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.

Enhancing photoluminescence performance of perovskite quantum dots with plasmonic nanoparticles: insights into mechanisms and light-emitting applications.

Perovskite quantum dots (QDs) are considered as promising materials for numerous optoelectronic applications due to their narrow emission spectra, high color purity, high photoluminescence quantum yields (PLQYs), and cost-effectiveness. Herein, we synthesized various types of perovskite QDs and incorporated Au nanoparticles (NPs) to systematically investigate the impact of plasmonic effects on the photoluminescence performance of perovskite QDs. The PLQYs of the QDs are enhanced effectively upon the inclusion of Au NPs in the solutions, with an impressive PLQY approaching 99% achieved. The PL measurements reveal that the primary mechanism behind the PL improvement is the accelerated rate of radiative recombination. Furthermore, we integrate perovskite QDs and Au NPs, which function as color conversion layers, with blue light-emitting diodes (LEDs), achieving a remarkable efficiency of 140.6 lm W-1. Additionally, we prepare photopatternable thin films of perovskite QDs using photocrosslinkable polymers as the matrix. Microscale patterning of the thin films is accomplished, indicating that the addition of plasmonic NPs does not adversely affect their photopatternable properties. Overall, our research not only elucidates the underlying mechanisms of plasmonic effects on perovskite QDs but presents a practical method for enhancing their optical performance, paving the way for next-generation optoelectronic applications, including high-definition micro-LED panels.

Improving optoelectronic performance and modulation bandwidth of green µ-LEDs via a compound pre-strained strategy.

A composite strain-modulation strategy to achieve high-performing green µ-LED devices for visible light communication is proposed. Compared with the conventional pre-well structure, introducing a pre-layer to enlarge the lateral lattice constant of the underlayer decreased the strain in the overall strain-modulated layer and MQW. This improved the crystal quality and suppressed the quantum confinement Stark effect. Using this modulation strategy, the green µ-LED array with the compound pre-strained structure exhibited a light output power of 20.5 mW and modulation bandwidth of 366 MHz, corresponding to improvements of 61% and 78%, respectively, compared with those of µ-LEDs with a pre-well structure.

Metasurface- and PCSEL-Based Structured Light for Monocular Depth Perception and Facial Recognition.

The novel depth-sensing system presented here revolutionizes structured light (SL) technology by employing metasurfaces and photonic crystal surface-emitting lasers (PCSELs) for efficient facial recognition in monocular depth-sensing. Unlike conventional dot projectors relying on diffractive optical elements (DOEs) and collimators, our system projects approximately 45,700 infrared dots from a compact 297-µm-dimention metasurface, drastically more spots (1.43 times) and smaller (233 times) than the DOE-based dot projector in an iPhone. With a measured field-of-view (FOV) of 158° and a 0.611° dot sampling angle, the system is lens-free and lightweight and boasts lower power consumption than vertical-cavity surface-emitting laser (VCSEL) arrays, resulting in a 5-10 times reduction in power. Utilizing a GaAs-based metasurface and a simplified optical architecture, this innovation not only addresses the drawbacks of traditional SL depth-sensing but also opens avenues for compact integration into wearable devices, offering remarkable advantages in size, power efficiency, and potential for widespread adoption.

Metasurface-driven polarization-division multiplexing of PCSEL for optical communications.

Free-space optical communications hold promising advantages, including a large bandwidth, access to license-free spectrum, high data rates, quick and simple deployment, low power consumption, and relaxed quality requirements. Nevertheless, key technical challenges remain, such as a higher transmission efficiency, a lower transmission loss, and a smaller form factor of optical systems. Here, we demonstrate the viability of circular-polarization-multiplexed multi-channel optical communication using metasurfaces alongside a photonic-crystal surface-emitting laser (PCSEL) light source at wavelength of 940 nm. Through the light manipulation with metasurface, we split the linearly polarized incidence into left and right circular polarizations with desired diffraction angles. Such orthogonal polarization states provide a paradigm of polarization division multiplexing technique for light communication. The PCSEL light source maintains a low divergence angle of about 0.373 degrees after passing through an ultra-thin metasurface without further bulky collimator or light guide, making end-to-end (E2E) and device-to-device (D2D) communications available in a compact form. Both light source and modulated polarized light exhibit a - 3 dB bandwidth over 500 MHz, with successful 1 Gbit/s transmission demonstrated in eye diagrams. Our results affirm that metasurface effectively boosts transmission capacity without compromising the light source's inherent properties. Future metasurface designs could expand channel capacity, and its integration with PCSEL monolithically holds promise for reducing interface losses, thereby enhancing efficiency.

Dynamical characteristics of AC-driven hybrid WSe2 monolayer/AlGaInP quantum wells light-emitting device.

The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.

Current Confinement Effect on the Performance of Blue Light Micro-LEDs with 10 µm Dimension.

The current confinement effect on the micro-LED (µLED) with a 10 µm dimension was simulated using SpeCLED software. In this study, three p-contact sizes were considered: 2 µm × 2 µm, 5 µm × 5 µm, and 8 µm × 8 µm dimensions for µLEDs with a 10 µm dimension. According to the simulation data, the highest external quantum efficiency (EQE) of 13.24% was obtained with a 5 µm × 5 µm contact size. The simulation data also showed that the µLEDs with narrow contact sizes experienced higher operating temperatures due to the current crowding effect. The experimental data revealed a red-shift effect in narrow contact sizes, indicating higher heat generation in those devices. As the contact sizes increased from 2 to 8 µm, the turn-on voltage decreased due to lower equivalent resistance. Additionally, the leakage current increased from 44 pA to 1.6 nA at a reverse voltage of -5 V. The study found that the best performance was achieved with a contact ratio of 0.5, which resulted in the highest EQE at 9.95%. This superior performance can be attributed to the better current confinement of the µLED compared to the µLED with a contact ratio of 0.8, resulting in lower leakage current and improved current spreading when compared to the µLED with a contact ratio of 0.2.

Vertical GaN MOSFET Power Devices.

Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.

Biodistributions and Imaging of Poly(ethylene glycol)-Conjugated Silicon Quantum Dot Nanoparticles in Osteosarcoma Models via Intravenous and Intratumoral Injections.

Osteosarcoma is a malignant tumor with relatively high mortality rates in children and adolescents. While nanoparticles have been widely used in assisting the diagnosis and treatment of cancers, the biodistributions of nanoparticles in osteosarcoma models have not been well studied. Herein, we synthesize biocompatible and highly photoluminescent silicon quantum dot nanoparticles (SiQDNPs) and investigate their biodistributions in osteosarcoma mouse models after intravenous and intratumoral injections by fluorescence imaging. The bovine serum albumin (BSA)-coated and poly(ethylene glycol) (PEG)-conjugated SiQDNPs, when dispersed in phosphate-buffered saline (PBS), can emit red photoluminescence with the photoluminescence quantum yield more than 30% and have very low in vitro and in vivo toxicity. The biodistributions after intravenous injections reveal that the SiQDNPs are mainly metabolized through the livers in mice, while only slight accumulation in the osteosarcoma tumor is observed. Furthermore, the PEG conjugation can effectively extend the circulation time. Finally, a mixture of SiQDNPs and indocyanine green (ICG), which complement each other in the spectral range and diffusion length, is directly injected into the tumor for imaging. After the injection, the SiQDNPs with relatively large particle sizes stay around the injection site, while the ICG molecules diffuse over a broad range, especially in the muscular tissue. By taking advantage of this property, the difference between the osteosarcoma tumor and normal muscular tissue is demonstrated.

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.

A typical method for normally-off operation, the metal-insulator-semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a VG of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 109 and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (Ron) of 6.8 Ω·mm and high breakdown voltage performance.

A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap.

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (RON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic RON. Both reliability and dynamic RON have been enhanced by these improvements.

Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue-UV Hybrid Structures.

Quantum dot (QD)-based RGB micro light-emitting diode (µ-LED) technology shows immense potential for achieving full-color displays. In this study, we propose a novel structural design that combines blue and quantum well (QW)-intermixing ultraviolet (UV)-hybrid µ-LEDs to achieve high color-conversion efficiency (CCE). For the first time, the impact of various combinations of QD and TiO2 concentrations, as well as thickness variations on photoluminescence efficiency (PLQY), has been systematically examined through simulation. High-efficiency color-conversion layer (CCL) have been successfully fabricated as a result of these simulations, leading to significant savings in time and material costs. By incorporating scattering particles of TiO2 in the CCL, we successfully scatter light and disperse QDs, effectively reducing self-aggregation and greatly improving illumination uniformity. Additionally, this design significantly enhances light absorption within the QD films. To enhance device reliability, we introduce a passivation protection layer using low-temperature atomic layer deposition (ALD) technology on the CCL surface. Moreover, we achieve impressive CCE values of 96.25% and 92.91% for the red and green CCLs, respectively, by integrating a modified distributed Bragg reflector (DBR) to suppress light leakage. Our hybrid structure design, in combination with an optical simulation system, not only facilitates rapid acquisition of optimal parameters for highly uniform and efficient color conversion in µ-LED displays but also expands the color gamut to achieve 128.2% in the National Television Standards Committee (NTSC) space and 95.8% in the Rec. 2020 standard. In essence, this research outlines a promising avenue towards the development of bespoke, high-performance µ-LED displays.

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.

Design of high-efficiency and large-angle homo-metagratings for light source integration.

Meta-optics integrated with light sources has gained significant attention. However, most focused on the efficiency of metasurfaces themselves, rather than the efficiency of integration. To design highly efficient beam deflection, we develop a scheme of homo-metagrating, involving the same material for meta-atoms, substrate, and top layer of the laser, to achieve near-unity power from light-emitting to metasurfaces. We utilize three degrees of freedom: overall add-on phase, parameters of meta-atoms in a period, and lattice arrangement. The overall efficiency of homo-metagratings is higher than that of hetero-metagratings. We believe our approach is capable of being implemented in various ultracompact optic systems.

Structural and optical analyses for InGaN-based red micro-LED.

This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Compact structured light generation based on meta-hologram PCSEL integration.

Metasurfaces, a catalog of optical components, offer numerous novel functions on demand. They have been integrated with vertical cavity surface-emitting lasers (VCSELs) in previous studies. However, the performance has been limited by the features of the VCSELs such as low output power and large divergence angle. Although the solution of the module of VCSEL array could solve these issues, the practical application is limited by extra lens and large size. In this study, we experimentally demonstrate reconstruction of a holographic images using a compact integration of a photonic crystal surface-emitting laser and metasurface holograms designed for structured light generation. This research showcases the flexible design capabilities of metasurfaces, high output power (on the order of milliwatts), and the ability to produce well-uniformed images with a wide field of view without the need for a collection lens, making it suitable for 3D imaging and sensing.