High-Efficiency Plasma Source Using a Magnetic Mirror Trap for Miniature-Ion Pumps.

In this study, we design a highly efficient plasma source using a magnetic mirror trap with two opposing permanent magnets for a miniature high-efficiency ion pump. First, we simulated the distribution of the magnetic field line formed by the proposed magnetic mirror configuration. By optimizing the distance between two opposing permanent magnets and size of these magnets, a magnetic mirror ratio value of 27 could be obtained, which is an electron confinement efficiency of over 90%. We also conducted an experiment on a high-efficiency discharge plasma source for a miniature ion pump using an optimized magnetic circuit. As a result, we revealed that the proposed magnetic circuit has a pronounced effect on plasma generation, particularly in the high-vacuum region.

Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging.

This study demonstrates room-temperature bonding using a getter layer for the vacuum packaging of microsystems. A thick Ti layer covered with an Au layer is utilized as a getter layer because it can absorb gas molecules in the package. Additionally, smooth Au surfaces can form direct bonds for hermetic sealing at room temperature. Direct bonding using a getter layer can simplify the vacuum packaging process; however, typical getter layers are rough in bonding formation. This study demonstrates two fabrication techniques for smooth getter layers. In the first approach, the Au/Ti layer is bonded to an Au layer on a smooth SiO2 template, and the Au/SiO2 interface is mechanically exfoliated. Although the root-mean-square roughness was reduced from 2.00 to 0.98 nm, the surface was still extremely rough for direct bonding. In the second approach, an Au/Ti/Au multilayer on a smooth SiO2 template is bonded with a packaging substrate, and the Au/SiO2 interface is exfoliated. The transferred Au/Ti/Au getter layer has a smooth surface with the root-mean-square roughness of 0.54 nm and could form wafer-scale direct bonding at room temperature. We believe that the second approach would allow a simple packaging process using direct bonding of the getter layer.

Bonding formation and gas absorption using Au/Pt/Ti layers for vacuum packaging.

In this study, we developed a metal multilayer that can provide hermetic sealing after degassing the assemblies and absorbing the residual gases in the package. A package without a leak path was obtained by the direct bonding of the Au/Pt/Ti layers. After packaging, annealing at 450 °C caused thermal diffusion of the Ti underlayer atoms to the inner surface, which led to absorption of the residual gas molecules. These results indicated that a wafer coated with a Au/Pt/Ti layer can provide hermetic sealing and absorb residual gases, which can simplify vacuum packaging processes in the electronics industry.

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions.

An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding.

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15-500 nm) and surface roughness (0.3-1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

Comparison of Argon and Oxygen Plasma Treatments for Ambient Room-Temperature Wafer-Scale Au⁻Au Bonding Using Ultrathin Au Films.

Au⁻Au surface activated bonding is promising for room-temperature bonding. The use of Ar plasma vs. O2 plasma for pretreatment was investigated for room-temperature wafer-scale Au⁻Au bonding using ultrathin Au films (<50 nm) in ambient air. The main difference between Ar plasma and O2 plasma is their surface activation mechanism: physical etching and chemical reaction, respectively. Destructive razor blade testing revealed that the bonding strength of samples obtained using Ar plasma treatment was higher than the strength of bulk Si (surface energy of bulk Si: 2.5 J/m²), while that of samples obtained using O2 plasma treatment was low (surface energy: 0.1⁻0.2 J/m²). X-ray photoelectron spectroscopy analysis revealed that a gold oxide (Au2O3) layer readily formed with O2 plasma treatment, and this layer impeded Au⁻Au bonding. Thermal desorption spectroscopy analysis revealed that Au2O3 thermally desorbed around 110 °C. Annealing of O2 plasma-treated samples up to 150 °C before bonding increased the bonding strength from 0.1 to 2.5 J/m² due to Au2O3 decomposition.