Deep Ultraviolet Optical Anisotropy of ß-Gallium Oxide Thin Films.

ß-Crystalline phase gallium oxide (ß-Ga2O3) is an ultrawide bandgap material with prospective applications in electronics and deep ultraviolet (DUV) optoelectronics and optics. The monoclinic crystal structure of ß-Ga2O3 results in optical anisotropy to incident light with different polarization states. This attribute can lead to different optical applications in the DUV. In this article, we investigated the optical properties of ß-Ga2O3 thin films grown by pulsed laser deposition technique on sapphire substrates with different crystallographic orientations. Marked in-plane polarization anisotropy, determined by reflectance and Raman spectroscopy, was observed for ß-Ga2O3 films deposited on an r-cut sapphire substrate. In contrast, isotropic optical properties were observed in ß-Ga2O3 films deposited on a c-cut sapphire substrate.

Tunable near-infrared Gires-Tournois resonators based on vanadium dioxide on gold film.

Vanadium dioxide (VO2) has been proposed as a phase-change material in tunable photonic and optoelectronic devices. In such devices, a thin layer of VO2 is typically deposited on metallic or insulating surfaces. In this Letter, we report the reflectance spectra of a subwavelength structure consisting of a thin layer of VO2 deposited on a gold film in the near-infrared spectral range, particularly near the wavelength of 1550 nm, which is significant for telecommunication applications. Our results indicate that in the insulating phase of VO2, the air/VO2/Au structure can be considered as a Gires-Tournois resonant cavity whose maximum absorption wavelength can be tuned by adjusting the thickness of the VO2 layer. In contrast, in the metallic phase of VO2, the reflectance of the structure increases by an amount of the order of a few tens of units. The proposed structure can prospectively lead to new design concepts in tunable photonic and optoelectronic devices.

Tunable dual-band terahertz metamaterial bandpass filters.

We report metamaterial terahertz (THz) bandpass filters with tunable dual-band selectivity. The shift in the center frequency of the device is achieved by actively modifying the effective length of the resonators. This was realized by introducing vanadium dioxide (VO2) bridges interconnecting specific regions of each resonator. Raising the temperature across the phase transition shifted the resonance frequency by ~32% due to changes in the electrical conductivity of the VO2. Measured THz transmission response of the proposed dual-band filter was in good correspondence with simulations.

Terahertz bandpass filters using double-stacked metamaterial layers.

Bandpass filters are reported based on double-stacked metamaterial layers separated by an air gap for operation at terahertz frequencies. Several stacking configurations were investigated designed for a ~0.5 THz center frequency. The filters exhibited improved spectral transmission properties when compared with conventional ones based on single metamaterial layers. 3 dB bandwidth of ~78 GHz and sidelobe suppression ratio >16 dB were determined when symmetric or asymmetric double layers were stacked. We demonstrate that superior frequency selectivity can be achieved when metamaterial layers with different unit cells are used. Good agreement was found between measured and simulated transmission response.