Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices.

We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a π-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit.

Generation of 64 GBd 4ASK signals using a silicon-organic hybrid modulator at 80°C.

We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) generating four-level amplitude shift keying (4ASK) signals at symbol rates of up to 64 GBd both at room temperature and at an elevated temperature of 80°C. The measured line rate of 128 Gbit/s corresponds to the highest value demonstrated for silicon-based MZM so far. We report bit error ratios of 10-10 (64 GBd BPSK), 10-5 (36 GBd 4ASK), and 4 × 10-3 (64 GBd 4ASK) at room temperature. At 80 °C, the respective bit error ratios are 10-10, 10-4, and 1.3 × 10-2. The high-temperature experiments were performed in regular oxygen-rich ambient atmosphere.

Electrically modulated diffraction gratings in organic chromophore thin films.

An electrically modulated diffraction grating has been demonstrated in poled polymer thin films containing the organic nonlinear optical chromophore, PYR-3 (2-{3-Cyano-4-[3-(1-decyl-1 H-pyridin-4-ylidene)-propenyl]-5,5-dimethy l-5 H-furan-2-ylidene}-malononitrile), and amorphous polycarbonate. A dc electric field induced change in the diffraction efficiency of up to 9% was observed. The diffraction efficiency modulation was likely due to an electric field induced change in the film thickness via a piezoelectric effect rather than via an electronic linear electro-optic effect.