RESUMO
We synthesized a CaZrO3/SrTiO3 oxide heterostructure, which can serve as an alternative to LaAlO3/SrTiO3, and confirmed the generation of 2-dimensional electron gas (2-DEG) at the heterointerface. We analyzed the electrical-transport properties of the 2-DEG to elucidate its intrinsic characteristics. Based on the magnetic field dependence of resistance at 2 K, which exhibited Weak Anti-localization (WAL) behaviors, the fitted Rashba parameter values were found to be about 12-15 × 10-12 eV*m. These values are stronger than the previous reported Rashba parameters obtained from the 2-DEGs in other heterostructure systems and several layered 2D materials. The observed strong spin-orbit coupling (SOC) is attributed to the strong internal electric field generated by the lattice mismatch between the CaZrO3 layer and SrTiO3 substrate. This pioneering strong SOC of the 2-DEG at the CaZrO3/SrTiO3 heterointerface may play a pivotal role in the developing future metal oxide-based quantum nanoelectronics devices.
RESUMO
The magnetic-flux-dependent dispersions of sub-bands in topologically protected surface states of a topological insulator nanowire manifest as Aharonov-Bohm oscillations (ABOs) observed in conductance measurements, reflecting the Berry's phase of π because of the spin-helical surface states. Here, we used thermoelectric measurements to probe a variation in the density of states at the Fermi level of the surface state of a topological insulator nanowire (Sb-doped Bi2Se3) under external magnetic fields and an applied gate voltage. The ABOs observed in the magnetothermovoltage showed 180° out-of-phase oscillations depending on the gate voltage values, which can be used to tune the Fermi wave number and the density of states at the Fermi level. The temperature dependence of the ABO amplitudes showed that the phase coherence was kept to T = 15 K. We suggest that thermoelectric measurements could be applied for investigating the electronic structure at the Fermi level in various quantum materials.
RESUMO
Tunable electrical phase transitions based on the structural and quantum-state phase transitions in two-dimensional transition-metal dichalcogenides have attracted attention in both semiconducting electronics and quantum electronics applications. Here, we report gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 (MoWSe) field-effect transistors prepared on SiO2/Si substrates. In gate-induced depletion regions of the 2H phase, an electrical current resumes flow at 150 K < T < 200 K with decreasing T irrespective of the layer number (n) for MoWSe when n < 20. The newly appearing electron-doped-type conducting channel again enters the 2H-phase region when the back-gate voltage increases, accompanied by the negative differential transconductance for four-layer and monolayer devices or by a deflection point in the transfer curves for a multilayer device. The thermal activation energies of the new conducting and 2H-phase branches differ by one order of magnitude at the same gate voltage for both the four-layer and monolayer cases, indicating that the electrical band at the Fermi level was modified. The hysteresis measurements for the gate voltage were performed with a five-layer device, which confirms the reversible electrical transition behavior. The possible origins of the nucleated conducting phase in the depletion region of the 2H phase of MoWSe are discussed.
