Reversible flexoelectric domain engineering at the nanoscale in van der Waals ferroelectrics.

The universal flexoelectric effect in solids provides a mechanical pathway for controlling electric polarization in ultrathin ferroelectrics, eliminating potential material breakdown from a giant electric field at the nanoscale. One challenge of this approach is arbitrary implementation, which is strongly hindered by one-way switching capability. Here, utilizing the innate flexibility of van der Waals materials, we demonstrate that ferroelectric polarization and domain structures can be mechanically, reversibly, and arbitrarily switched in two-dimensional CuInP2S6 via the nano-tip imprinting technique. The bidirectional flexoelectric control is attributed to the extended tip-induced deformation in two-dimensional systems with innate flexibility at the atomic scale. By employing an elastic substrate, artificial ferroelectric nanodomains with lateral sizes as small as ~80 nm are noninvasively generated in an area of 1 µm2, equal to a density of 31.4 Gbit/in2. Our results highlight the potential applications of van der Waals ferroelectrics in data storage and flexoelectronics.

Large-Scale Domain Engineering in Two-Dimensional Ferroelectric CuInP2S6 via Giant Flexoelectric Effect.

Room-temperature ferroelectricity in two-dimensional (2D) materials is a potential for developing atomic-scale functional devices. However, as a key step for the technology implementations of 2D ferroelectrics in electronics, the controllable generation of uniform domains remains challenging at the current stage because domain engineering through an external electric field at the 2D limit inevitably leads to large leakage currents and material breakdown. Here, we demonstrate a voltage-free method, the flexoelectric effect, to artificially generate large-scale stripe domains in 2D ferroelectric CuInP2S6 with single domain lateral size at the scale of several hundred microns. With giant strain gradients (∼106 m-1), we mechanically switch the out-of-plane polarization in ultrathin CuInP2S6. The flexoelectric control of polarization is understood with a distorted Landau-Ginzburg-Devonshire double well model. Through substrate strain engineering, the stripe domain density is controllable. Our results highlight the potential of developing van der Waals ferroelectrics-based flexible electronics.

2-Phenylquinazolin-4(3H)-one, a class of potent PDE5 inhibitors with high selectivity versus PDE6.

In our efforts to minimize the side effects associated with low selectivity against the other PDE isozymes, a novel class of 2-phenylquinazolin-4(3H)-one derivatives were designed and prepared as potent PDE5 inhibitors with high selectivity against PDE6. The syntheses and SAR studies of such molecules were reported.