Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.

A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

The Effect of Post Deposition Treatment on Properties of ALD Al-Doped ZnO Films.

In this paper, aluminum-doped zinc oxide (ZnO:Al or AZO) thin films are grown using atomic layer deposition (ALD) and the influence of postdeposition UV-ozone and thermal annealing treatments on the films' properties are investigated. X-ray diffraction (XRD) revealed a polycrystalline wurtzite structure with a preferable (100) orientation. The crystal size increase after the thermal annealing is observed while UV-ozone exposure led to no significant change in crystallinity. The results of the X-ray photoelectron spectroscopy (XPS) analyses show that a higher amount of oxygen vacancies exists in the ZnO:Al after UV-ozone treatment, and that the ZnO:Al, after annealing, has a lower amount of oxygen vacancies. Important and practical applications of ZnO:Al (such as transparent conductive oxide layer) were found, and its electrical and optical properties demonstrate high tunability after postdeposition treatment, particularly after UV-Ozone exposure, offers a noninvasive and easy way to lower the sheet resistance values. At the same time, UV-Ozone treatment did not cause any significant changes to the polycrystalline structure, surface morphology, or optical properties of the AZO films.

Laser-optics-based method to suppress Mikania micrantha growth.

Mikania micrantha is an exotic and aggressive species that can reproduce asexually and sexually through its germinative stem and its featherlike seeds. Present weeding methods cannot effectively or economically control the spread of Mikania micrantha. In this article, we propose a method to suppress the growth and spread of Mikania micrantha by applying a high-energy laser beam to penetrate its stem. The threshold penetrating optical intensity is 3.1 W/mm2. To optimize the damage to the inner tissue of the stem, which includes the vascular bundle and medulla for transporting organic nutrients, water, and inorganic salt, the absorption spectrum of the tissue and laser beam size are analyzed. According to the absorption spectrum of the tissue and growth mechanism of Mikania micrantha, a 455 nm blue laser is used as an irradiated light source. A single beam with two different beam sizes or two laser beams with the same beam size is used to optimize the stem damage. By the time the cumulative energy reaches 15 Joules for a single laser beam with dimensions of 0.81 mm × 0.74 mm, the inner tissue will be damaged 97.5%. We perform laser irradiation on the fresh Mikania micrantha grown hydroponically, with the result that all samples withered in 30 days. Therefore, using the method before the flowering season of Mikania micrantha can effectively inhibit its reproduction.

Crossover from polariton lasing to exciton lasing in a strongly coupled ZnO microcavity.

Unlike conventional photon lasing, in which the threshold is limited by the population inversion of the electron-hole plasma, the exciton lasing generated by exciton-exciton scattering and the polariton lasing generated by dynamical condensates have received considerable attention in recent years because of the sub-Mott density and low-threshold operation. This paper presents a novel approach to generate both exciton and polariton lasing in a strongly coupled microcavity (MC) and determine the critical driving requirements for simultaneously triggering these two lasing operation in temperature <140 K and large negative polariton-exciton offset (<-133 meV) conditions. In addition, the corresponding lasing behaviors, such as threshold energy, linewidth, phase diagram, and angular dispersion are verified. The results afford a basis from which to understand the complicated lasing mechanisms in strongly coupled MCs and verify a new method with which to trigger dual laser emission based on exciton and polariton.

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.

The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 10(7) cm(-2) to 2.6 × 10(7) cm(-2). Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.

Suspended GaN-based band-edge type photonic crystal nanobeam cavities.

We demonstrated GaN-based photonic crystal (PC) nanobeam cavities by using the e-beam lithography and the suspended nanobeams were realized by focused-ion beam (FIB) milling. One resonant mode was clearly observed at 411.7 nm at 77K by optical pumping. The quality factor was measured to be to 7.4 × 10(2). Moreover, the degree of polarization value was measured to be 40%. The temperature-dependent characteristics were measured and discussed, which unambiguously demonstrated that the observed resonant peak originated from the band-edge mode of the one-dimensional PC nanobeam.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Room temperature polariton lasing vs. photon lasing in a ZnO-based hybrid microcavity.

We report on the room temperature polariton lasing and photon lasing in a ZnO-based hybrid microcavity under optical pumping. A series of experimental studies of the polariton lasing (exciton-photon detunings of δ = -119 meV) in the strong-coupling regime are discussed and compared to a photon lasing (δ = -45 meV) in the weak-coupling regime obtained in the same structure. The measured threshold power density (31.8 kW/cm2) of polariton lasing is one order of magnitude lower than that of the photon lasing (318.2 kW/cm2). In addition, the comparison between polariton lasing and photon lasing is done in terms of the linewidth broadening, blue-shift of the emission peak, and polarization.

High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.

In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO(2) nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO(2) nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO(2) nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs.