Mixed Cation Halide Perovskite under Environmental and Physical Stress.

Despite the ideal performance demonstrated by mixed perovskite materials when used as active layers in photovoltaic devices, the factor which still hampers their use in real life remains the poor stability of their physico-chemical and functional properties when submitted to prolonged permanence in atmosphere, exposure to light and/or to moderately high temperature. We used high resolution photoelectron spectroscopy to compare the chemical state of triple cation, double halide Csx(FA0.83MA0.17)(1-x)Pb(I0.83Br0.17)3 perovskite thin films being freshly deposited or kept for one month in the dark or in the light in environmental conditions. Important deviations from the nominal composition were found in the samples aged in the dark, which, however, did not show evident signs of oxidation and basically preserved their own electronic structures. Ageing in the light determined a dramatic material deterioration with heavily perturbed chemical composition also due to reactions of the perovskite components with surface contaminants, promoted by the exposure to visible radiation. We also investigated the implications that 2D MXene flakes, recently identified as effective perovskite additive to improve solar cell efficiency, might have on the labile resilience of the material to external agents. Our results exclude any deleterious MXene influence on the perovskite stability and, actually, might evidence a mild stabilizing effect for the fresh samples, which, if doped, exhibited a lower deviation from the expected stoichiometry with respect to the undoped sample. The evolution of the undoped perovskites under thermal stress was studied by heating the samples in UHV while monitoring in real time, simultaneously, the behaviour of four representative material elements. Moreover, we could reveal the occurrence of fast changes induced in the fresh material by the photon beam as well as the enhanced decomposition triggered by the concurrent X-ray irradiation and thermal heating.

Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2Tx MXenes.

MXenes are a young family of two-dimensional transition metal carbides, nitrides, and carbonitrides with highly controllable structure, composition, and surface chemistry to adjust for target applications. Here, we demonstrate the modifications of two-dimensional MXenes by low-energy ion implantation, leading to the incorporation of Mn ions in Ti3C2Tx (where Tx is a surface termination) thin films. Damage and structural defects caused by the implantation process are characterized at different depths by XPS on Ti 2p core-level spectra, by ToF-SIMS, and with electron energy loss spectroscopy analyses. Results show that the ion-induced alteration of the damage tolerant Ti3C2Tx layer is due to defect formation at both Ti and C sites, thereby promoting the functionalization of these sites with oxygen groups. This work contributes to the inspiring approach of tailoring 2D MXene structure and properties through doping and defect formation by low-energy ion implantation to expand their practical applications.

Dual-Route Hydrogenation of the Graphene/Ni Interface.

Nanostructured architectures based on graphene/metal interfaces might be efficiently exploited in hydrogen storage due to the attractive capability to provide adsorption sites both at the top side of graphene and at the metal substrate after intercalation. We combined in situ high-resolution X-ray photoelectron spectroscopy and scanning tunneling microscopy with theoretical calculations to determine the arrangement of hydrogen atoms at the graphene/Ni(111) interface at room temperature. Our results show that at low coverage H atoms predominantly adsorb as monomers and that chemisorption saturates when ∼25% of the surface is hydrogenated. In parallel, with a much lower rate, H atoms intercalate below graphene and bind to Ni surface sites. Intercalation progressively destabilizes the C-H bonds and triggers the release of the hydrogen chemisorbed on graphene. Valence band and near-edge absorption spectroscopy demonstrate that the graphene layer is fully lifted when the Ni surface is saturated with H. Thermal programmed desorption was used to determine the stability of the hydrogenated interface. Whereas the H atoms chemisorbed on graphene remain unperturbed over a wide temperature range, the intercalated phase abruptly desorbs 50-100 K above room temperature.

Secondary electron emission and yield spectra of metals from Monte Carlo simulations and experiments.

In this work, we present a computational method, based on the Monte Carlo statistical approach, for calculating electron energy emission and yield spectra of metals, such as copper, silver and gold. The calculation of these observables proceeds via the Mott theory with a Dirac-Hartree-Fock spherical potential to deal with the elastic scattering processes, and by using the Ritchie dielectric approach to model the electron inelastic scattering events. In the latter case, the dielectric function, which represents the starting point for the evaluation of the energy loss, is obtained from experimental reflection electron energy loss spectra. The generation of secondary electrons upon ionization of the samples is also implemented in the calculation. A remarkable agreement is obtained between both theoretical and experimental electron emission spectra and yield curves.

The adsorption of silicon on an iridium surface ruling out silicene growth.

The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K. Density functional theory calculations were carried out in order to evaluate the stability of the different Si adsorption configurations as a function of the coverage. Results indicate that, at low coverage, the Si adatoms tend to occupy the hollow Ir sites, although a small fraction of them penetrates the first Ir layer. Si penetration of the Ir surface can take place if the energy gained upon Si adsorption is used to displace the Ir surface atoms, rather then being dissipated differently. At a Si coverage of ∼1 monolayer, the Ir 4f spectrum indicates that not only the metal surface but also the layers underneath are perturbed. Our results point out that the Si/Ir(111) interface is unstable towards Si-Ir intermixing, in agreement with the silicide phase formation reported in the literature for the reverted interface.

Unexpected Rotamerism at the Origin of a Chessboard Supramolecular Assembly of Ruthenium Phthalocyanine.

We have investigated the formation and the properties of ultrathin films of ruthenium phthalocyanine (RuPc)2 vacuum deposited on graphite by scanning tunneling microscopy and synchrotron photoemission spectroscopy measurements, interpreted in close conjunction with ab initio simulations. Thanks to its unique dimeric structure connected by a direct Ru-Ru bond, (RuPc)2 can be found in two stable rotameric forms separated by a low-energy barrier. Such isomerism leads to a peculiar organization of the molecules in flat, horizontal layers on the graphite surface, characterized by a chessboard-like alternation of the two rotamers. Moreover, the molecules are vertically connected to form π-stacked columnar pillars of akin rotamers, compatible with the high conductivity measured in (RuPc)2 powders. Such features yield an unprecedented supramolecular assembly of phthalocyanine films, which could open interesting perspectives toward the realization of new architectures of organic electronic devices.

Unveiling the Mechanisms Leading to H2 Production Promoted by Water Decomposition on Epitaxial Graphene at Room Temperature.

By means of a combination of surface-science spectroscopies and theory, we investigate the mechanisms ruling the catalytic role of epitaxial graphene (Gr) grown on transition-metal substrates for the production of hydrogen from water. Water decomposition at the Gr/metal interface at room temperature provides a hydrogenated Gr sheet, which is buckled and decoupled from the metal substrate. We evaluate the performance of Gr/metal interface as a hydrogen storage medium, with a storage density in the Gr sheet comparable with state-of-the-art materials (1.42 wt %). Moreover, thermal programmed reaction experiments show that molecular hydrogen can be released upon heating the water-exposed Gr/metal interface above 400 K. The Gr hydro/dehydrogenation process might be exploited for an effective and eco-friendly device to produce (and store) hydrogen from water, i.e., starting from an almost unlimited source.

Self-Assembly of Graphene Nanoblisters Sealed to a Bare Metal Surface.

The possibility to intercalate noble gas atoms below epitaxial graphene monolayers coupled with the instability at high temperature of graphene on the surface of certain metals has been exploited to produce Ar-filled graphene nanosized blisters evenly distributed on the bare Ni(111) surface. We have followed in real time the self-assembling of the nanoblisters during the thermal annealing of the Gr/Ni(111) interface loaded with Ar and characterized their morphology and structure at the atomic scale. The nanoblisters contain Ar aggregates compressed at high pressure arranged below the graphene monolayer skin that is decoupled from the Ni substrate and sealed only at the periphery through stable C-Ni bonds. Their in-plane truncated triangular shapes are driven by the crystallographic directions of the Ni surface. The nonuniform strain revealed along the blister profile is explained by the inhomogeneous expansion of the flexible graphene lattice that adjusts to envelop the Ar atom stacks.

Chemical gating of epitaxial graphene through ultrathin oxide layers.

We achieved a controllable chemical gating of epitaxial graphene grown on metal substrates by exploiting the electrostatic polarization of ultrathin SiO2 layers synthesized below it. Intercalated oxygen diffusing through the SiO2 layer modifies the metal-oxide work function and hole dopes graphene. The graphene/oxide/metal heterostructure behaves as a gated plane capacitor with the in situ grown SiO2 layer acting as a homogeneous dielectric spacer, whose high capacity allows the Fermi level of graphene to be shifted by a few hundreds of meV when the oxygen coverage at the metal substrate is of the order of 0.5 monolayers. The hole doping can be finely tuned by controlling the amount of interfacial oxygen, as well as by adjusting the thickness of the oxide layer. After complete thermal desorption of oxygen the intrinsic doping of SiO2 supported graphene is evaluated in the absence of contaminants and adventitious adsorbates. The demonstration that the charge state of graphene can be changed by chemically modifying the buried oxide/metal interface hints at the possibility of tuning the level and sign of doping by the use of other intercalants capable of diffusing through the ultrathin porous dielectric and reach the interface with the metal.

Epitaxial growth of a single-domain hexagonal boron nitride monolayer.

We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T=1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T=1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.

Bottom-up approach for the low-cost synthesis of graphene-alumina nanosheet interfaces using bimetallic alloys.

The production of high-quality graphene-oxide interfaces is normally achieved by graphene growth via chemical vapour deposition on a metallic surface, followed by transfer of the C layer onto the oxide, by atomic layer and physical vapour deposition of the oxide on graphene or by carbon deposition on top of oxide surfaces. These methods, however, come with a series of issues: they are complex, costly and can easily result in damage to the carbon network, with detrimental effects on the carrier mobility. Here we show that the growth of a graphene layer on a bimetallic Ni3Al alloy and its subsequent exposure to oxygen at 520 K result in the formation of a 1.5 nm thick alumina nanosheet underneath graphene. This new, simple and low-cost strategy based on the use of alloys opens a promising route to the direct synthesis of a wide range of interfaces formed by graphene and high-κ dielectrics.

Controlling hydrogenation of graphene on Ir(111).

Combined fast X-ray photoelectron spectroscopy and density functional theory calculations reveal the presence of two types of hydrogen adsorbate structures at the graphene/Ir(111) interface, namely, graphane-like islands and hydrogen dimer structures. While the former give rise to a periodic pattern, dimers tend to destroy the periodicity. Our data reveal distinctive growth rates and stability of both types of structures, thereby allowing one to obtain well-defined patterns of hydrogen clusters. The ability to control and manipulate the formation and size of hydrogen structures on graphene facilitates tailoring of its properties for a wide range of applications by means of covalent functionalization.

Ultrafast charge transfer at monolayer graphene surfaces with varied substrate coupling.

The charge transfer rates of a localized excited electron to graphene monolayers with variable substrate coupling have been investigated by the core hole clock method with adsorbed argon. Expressed as charge transfer times, we find strong variations between ~3 fs (on graphene "valleys" on Ru(0001)) to ~16 fs (quasi-free graphene on SiC, O/Ru(0001), or SiO2/Ru). The values for the "hills" on Gr/Ru and on Gr/Pt(111) are in between, with the ratio 1.7 between the charge transfer times measured on "hills" and "valleys" of Gr/Ru. We discuss the results for Gr on metals in terms of hybridized Ru-C orbitals, which change with the relative Gr-Ru alignment and distance. The charge transfer on the decoupled graphene layers must represent the intrinsic coupling to the graphene empty π* states. Its low rate may be influenced by processes retarding the spreading of charge after transfer.

Oxygen switching of the epitaxial graphene-metal interaction.

Using photoemission spectroscopy techniques, we show that oxygen intercalation is achieved on an extended layer of epitaxial graphene on Ir(111), which results in the "lifting" of the graphene layer and in its decoupling from the metal substrate. The oxygen adsorption below graphene proceeds as on clean Ir(111), giving only a slightly higher oxygen coverage. Upon lifting, the C 1s signal shows a downshift in binding energy, due to the charge transfer to graphene from the oxygen-covered metal surface. Moreover, the characteristic spectral signatures of the graphene-substrate interaction in the valence band are removed, and the spectrum of strongly hole-doped, quasi free-standing graphene with a single Dirac cone around the K point is observed. The oxygen can be deintercalated by annealing, and this process takes place at around T = 600 K, in a rather abrupt way. A small amount of carbon atoms is lost, implying that graphene has been etched. After deintercalation graphene restores its interaction with the Ir(111) substrate. Additional intercalation/deintercalation cycles readily occur at lower oxygen doses and temperatures, consistently with an increasingly defective lattice. Our findings demonstrate that oxygen intercalation is an efficient method for fully decoupling an extended layer of graphene from a metal substrate, such as Ir(111). They pave the way for the fundamental research on graphene, where extended, ordered layers of free-standing graphene are important and, due to the stability of the intercalated system in a wide temperature range, also for the advancement of next-generation graphene-based electronics.

Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

Fundamental role of the H-bond interaction in the dissociation of NH3 on Si(001)-(2×1).

Further insight into the dissociative adsorption of NH3 on Si(001) has been obtained using a combined computational and experimental approach. A novel route leading to the dissociation of the chemisorbed NH3 is proposed, based on H-bonding interactions between the gas phase and the chemisorbed NH3 molecules. Our model, complemented by synchrotron radiation photoelectron spectroscopy measurements, demonstrates that the low temperature dissociation of molecular chemisorbed NH3 is driven by the continuous flux of ammonia molecules from the gas phase.

Local electronic structure and density of edge and facet atoms at Rh nanoclusters self-assembled on a graphene template.

The chemical and physical properties of nanoclusters largely depend on their sizes and shapes. This is partly due to finite size effects influencing the local electronic structure of the nanocluster atoms which are located on the nanofacets and on their edges. Here we present a thorough study on graphene-supported Rh nanocluster assemblies and their geometry-dependent electronic structure obtained by combining high-energy resolution core level photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. We demonstrate the possibility to finely control the morphology and the degree of structural order of Rh clusters grown in register with the template surface of graphene/Ir(111). By comparing measured and calculated core electron binding energies, we identify edge, facet, and bulk atoms of the nanoclusters. We describe how small interatomic distance changes occur while varying the nanocluster size, substantially modifying the properties of surface atoms. The properties of under-coordinated Rh atoms are discussed in view of their importance in heterogeneous catalysis and magnetism.

Dual path mechanism in the thermal reduction of graphene oxide.

Graphene is easily produced by thermally reducing graphene oxide. However, defect formation in the C network during deoxygenation compromises the charge carrier mobility in the reduced material. Understanding the mechanisms of the thermal reactions is essential for defining alternative routes able to limit the density of defects generated by carbon evolution. Here, we identify a dual path mechanism in the thermal reduction of graphene oxide driven by the oxygen coverage: at low surface density, the O atoms adsorbed as epoxy groups evolve as O(2) leaving the C network unmodified. At higher coverage, the formation of other O-containing species opens competing reaction channels, which consume the C backbone. We combined spectroscopic tools and ab initio calculations to probe the species residing on the surface and those released in the gas phase during heating and to identify reaction pathways and rate-limiting steps. Our results illuminate the current puzzling scenario of the low temperature gasification of graphene oxide.

Substrate influence for the Zn-tetraphenyl-porphyrin adsorption geometry and the interface-induced electron transfer.

In molecular devices, the importance of interfaces cannot be neglected as they determine charge injection and charge flow and, therefore, the device performance. Herein we report on the interaction of one single layer of Zn-tetraphenyl-porphyrin with Ag(110) and Si(111). Photoemission, near-edge X-ray absorption, and resonant photoemission are used to study the bonding nature, the adsorption geometry as well as the dynamics of electron transfer between the molecules and the metal or semiconductor surfaces. Molecule-substrate charge transfer is driven by the overlap with the molecular pi orbitals. In particular, the coupling of the phenyl legs with the substrate and the relative excited charge injection are dramatically different for the two surfaces considered.

Mesoscopic donor-acceptor multilayer by ultrahigh-vacuum codeposition of Zn-tetraphenyl-porphyrin and C70.

The peculiar electrochemical and photophysical properties of porphyrin and fullerene molecules make them promising candidates for the construction of two- and three-dimensional organic-based materials. An important question is how pristine fullerene and porphyrin will organize when deposited on surfaces via in vacuum molecular beam evaporation. Here we show that codeposition of C(70) and Zn-tetraphenyl-porphyrin (ZnTPP) induces the self-assembly of electron-rich flat aromatic molecules at the curved surface of C(70), thus enhancing the chromophore interaction and forming a supramolecular multilayer donor-acceptor structure. While the ground-state electronic spectra almost reflect a simple summation of ZnTPP and C(70) components, the excited-state electrons at the porphyrin macrocycle can rapidly delocalize to the fullerene. The excited charge transfer time scale is faster than 1-2 fs, as shown by resonant photoemission for the core-excited charges.