Multispectral interference filter arrays with compensation of angular dependence or extended spectral range.

Thin film Fabry-Perot filter arrays with high selectivity can be realized with a single patterning step, generating a spatial modulation of the effective refractive index in the optical cavity. In this paper, we investigate the ability of this technology to address two applications in the field of image sensors. First, the spectral tuning may be used to compensate the blue-shift of the filters in oblique incidence, provided the filter array is located in an image plane of an optical system with higher field of view than aperture angle. The technique is analyzed for various types of filters and experimental evidence is shown with copper-dielectric infrared filters. Then, we propose a design of a multispectral filter array with an extended spectral range spanning the visible and near-infrared range, using a single set of materials and realizable on a single substrate.

Mlines characterization of the refractive index profile of SiGe gradient waveguides at 2.15 µm.

SiGe alloys present a large Infra-Red transparency window and a full compatibility with the standard Complementary Metal Oxide Semiconductor processing making them suitable for applications in integrated optics. In this paper we report on Mlines characterization of Si(1-x)Ge(x) graded index waveguides at 2.15 µm. First, a law giving the refractive index of a Si(1-x)Ge(x) alloy as a function of the Ge content x: n = 1.342x(2) + 0.295x + 3.451, has been experimentally established in the 0 < x < 0.4 range. Then, we have demonstrated that our methodology based on Mlines measurements can be used as short-loop non-destructive technique to provide feedback for sample growth.

Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers.

The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.