RESUMO
Perovskites have been unprecedented with a relatively sharp rise in power conversion efficiency in the last decade. However, the polycrystalline nature of the perovskite film makes it susceptible to surface and grain boundary defects, which significantly impedes its potential performance. Passivation of these defects has been an effective approach to further improve the photovoltaic performance of the perovskite solar cells. Here, we report the use of a novel hydrazine-based aromatic iodide salt or phenyl hydrazinium iodide (PHI) for secondary post treatment to passivate surface and grain boundary defects in triple cation mixed halide perovskite films. In particular, the PHI post treatment reduced current at the grain boundaries, facilitated an electron barrier, and reduced trap state density, indicating suppression of leakage pathways and charge recombination, thus passivating the grain boundaries. As a result, a significant enhancement in power conversion efficiency to 20.6% was obtained for the PHI-treated perovskite device in comparison to a control device with 17.4%.