Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts.

InGaN/GaN multiple quantum well (MQW) nanorods have demonstrated significantly improved optical and electronic properties compared to their planar counterparts. However, the exact nature of the processes whereby nanorod structures impact the optical properties of quantum wells is not well understood, even though a variety of mechanisms have been proposed. We performed nanoscale spatially resolved, steady-state, and time-resolved photoluminescence (PL) experiments confirming that photoexcited electrons and holes are strongly bound by Coulomb interactions (i.e., excitons) in planar MQWs due to the large exciton binding energy in InGaN quantum wells. In contrast, free electron-hole recombination becomes the dominant mechanism in nanorods, which is ascribed to efficient exciton dissociation. The nanorod sidewall provides an effective pathway for exciton dissociation that significantly improves the optical performance of InGaN/GaN MQWs. We also confirm that surface treatment of nanorod sidewalls has an impact on exciton dissociation. Our results provide new insights into excitonic and charge carrier dynamics of quantum confined materials as well as the influence of surface states.

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures.

While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Disentangling the effects of nanoscale structural variations on the light emission wavelength of single nano-emitters: InGaN/GaN multiquantum well nano-LEDs for a case study.

The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale variations in strain, thickness, and composition is critical in current and novel nanotechnologies from highly efficient light sources to photovoltaics. Here, we present a correlated experimental and theoretical study of single nanorod light emitting diodes (nano-LEDs) based on InGaN/GaN multiquantum wells to separate the contributions of these intrinsic fluctuations. Cathodoluminescence measurements show that nano-LEDs with identical strain states probed by non-resonant micro-Raman spectroscopy can radiate light at different wavelengths. The deviations in the measured optical transitions agree very well with band profile calculations for quantum well thicknesses of 2.07-2.72 nm and In fractions of 17.5-19.5% tightly enclosing the growth values. The nanorod surface roughness controls the appearance of surface optical phonon modes with direct implications on the design of phonon assisted nano-LED devices. This work establishes a new, simple, and powerful methodology for fundamental understanding as well as quantitative analysis of the strain - light emission relationship and surface-related phenomena in the emerging field of nano-emitters.